Ferroelectric memory cell recovery
Methods, systems, and devices for recovering fatigued ferroelectric memory cells are described. Recovery voltages may be applied to a ferroelectric memory cell that is fatigued due to repeated access (read or write) operations. The recovery voltage may have a greater amplitude than the access voltage and may include multiple voltage pulses or a constant voltage. The recovery operation may be performed in the background as the memory array operates, or it may be performed when a host device is not actively using the memory array. The recovery operations may be performed periodically or may include discrete series of pulses distributed among several instances.
1. A method, comprising:
determining that a ferroelectric memory cell of a memory array satisfies a fatigue threshold;
initiating a fatigue recovery operation based at least in part on determining that the ferroelectric memory cell satisfies the fatigue threshold;
identifying that an event interrupts the fatigue recovery operation of the ferroelectric memory cell; and
suspending the fatigue recovery operation based at least in part on identifying the event.
2. The method of claim 1 , further comprising:
receiving a request to access the memory array, wherein the event interrupting the fatigue recovery operation at the ferroelectric memory cell comprises the request to access the memory array.
3. The method of claim 1 , further comprising:
identifying the event interrupting the fatigue recovery operation at the ferroelectric memory cell is complete; and
resuming the fatigue recovery operation based at least in part on the completion of the event.
4. The method of claim 1 , further comprising:
determining a logic state of the ferroelectric memory cell based at least in part on determining that the ferroelectric memory cell satisfies the fatigue threshold; and
storing the logic state of the ferroelectric memory cell in another memory cell, wherein the fatigue recovery operation is initiated after storing the logic state of the ferroelectric memory cell in the other memory cell.
5. The method of claim 1 , wherein determining that the ferroelectric memory cell satisfies the fatigue threshold comprises:
receiving a command to perform the fatigue recovery operation.
6. The method of claim 1 , wherein the fatigue recovery operation at the ferroelectric memory cell is distributed among a plurality of fatigue recovery operations.
7. The method of claim 1 , wherein the fatigue threshold of the ferroelectric memory cell is based at least in part on a number of access cycles in which the ferroelectric memory cell satisfies a remnant polarization threshold.
8. The method of claim 1 , further comprising:
identifying a periodicity of the event that interrupts the fatigue recovery operation of the ferroelectric memory cell, wherein initiating the fatigue recovery operation at the ferroelectric memory cell is based at least in part on the periodicity of the event.
9. A method, comprising:
determining that a ferroelectric memory cell of a memory array satisfies a fatigue threshold based at least in part on a first voltage applied to the memory array;
initiating a fatigue recovery operation at the ferroelectric memory cell based at least in part on determining that the ferroelectric memory cell of the memory array satisfies the fatigue threshold; and
applying, as part of the fatigue recovery operation, a second voltage during a plurality of instances distributed over operations of the ferroelectric memory cell.
10. The method of claim 9 , wherein the plurality of instances comprises a predetermined number of pulses where the second voltage is applied during the fatigue recovery operation.
11. The method of claim 10 , further comprising:
pulsing the second voltage until a number of repetitions of applying the second voltage satisfies a recovery threshold associated with the predetermined number of pulses, wherein applying the second voltage is based at least in part on the pulsing of the second voltage.
12. The method of claim 9 , further comprising:
incrementing a counter each time the second voltage is applied during the plurality of instances distributed over operations of the ferroelectric memory cell.
13. The method of claim 12 , wherein the counter stores a total number of instances the second voltage is applied during the fatigue recovery operation.
14. The method of claim 9 , wherein a duration of the fatigue recovery operation, a number of the plurality of instances, or both are based at least in part on the second voltage.
15. The method of claim 9 , further comprising:
applying the second voltage for a time period or a number of repetitions during the plurality of instances, wherein a subset of the time period or a subset of the number of repetitions is based at least in part on a duration of the fatigue recovery operation.
16. The method of claim 9 , wherein the second voltage comprises at least one of:
a plurality of bipolar voltage pulses;
a plurality of unipolar voltage pulses; or
a voltage with a constant amplitude.
17. The method of claim 9 , wherein an amplitude of the second voltage is greater than an amplitude of the first voltage applied to the memory array.
18. A circuit, comprising:
a memory array including a plurality of ferroelectric memory cells; and
a memory controller coupled with the memory array and operable to:
determine that a ferroelectric memory cell of the memory array satisfies a fatigue threshold;
initiate a fatigue recovery operation based at least in part on determining that the ferroelectric memory cell satisfies the fatigue threshold;
identify that an event interrupts the fatigue recovery operation of the ferroelectric memory cell; and
suspend the fatigue recovery operation based at least in part on identifying the event.
19. The circuit of claim 18 , wherein the memory controller is further operable to:
resume the fatigue recovery operation based at least in part on identifying a completion of the event.
20. The circuit of claim 18 , wherein the memory controller is further operable to:
distribute the fatigue recovery operation at the ferroelectric memory cell among a plurality of recovery operations.