Borane mediated dehydrogenation process from silane and alkylsilane species for spacer and hardmask application
Implementations described herein generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron-doped amorphous silicon layers on a semiconductor substrate. In one implementation, a method of forming a boron-doped amorphous silicon layer on a substrate is provided. The method comprises depositing a predetermined thickness of a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, depositing conformally a predetermined thickness of a boron-doped amorphous silicon layer on the patterned features and the exposed upper surface of the substrate and selectively removing the boron-doped amorphous silicon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the boron-doped amorphous silicon layer.
1. A method of forming an amorphous silicon layer on a substrate in a processing chamber, comprising:
depositing a predetermined thickness of a sacrificial dielectric layer over a substrate;
forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate;
depositing conformally a predetermined thickness of a boron-doped amorphous silicon layer on the patterned features and the exposed upper surface of the substrate, comprising:
flowing dimethylamine borane [NH(CH 3 ) 2 BH 3 ] (DMAB) into the processing chamber; and
flowing a silane-containing gas mixture into the processing chamber; and
selectively removing the boron-doped amorphous silicon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the boron-doped amorphous silicon layer, wherein the sacrificial dielectric layer comprises silicon nitride, polysilicon, or amorphous carbon.
2. The method of claim 1 , further comprising removing the patterned features from the substrate.
3. The method of claim 1 , wherein the silane-containing gas mixture comprises one or more silane-containing compounds selected from silane (SiH 4 ), disilane (Si 2 H 6 ), trisilane (Si 3 H 8 ), tetrasilane (Si 4 H 10 ), and combinations thereof.
4. The method of claim 1 , wherein depositing the boron-doped amorphous silicon layer on the patterned features is performed using a thermal chemical vapor deposition process.
5. The method of claim 1 , wherein depositing the boron-doped amorphous silicon layer on the patterned features is performed using a plasma-enhanced chemical vapor deposition (PECVD) process.
6. The method of claim 5 , further comprising introducing a plasma-initiating gas into the processing chamber.
7. The method of claim 1 , wherein the sacrificial dielectric layer comprises amorphous carbon.
8. The method of claim 1 , wherein the substrate comprises a plurality of alternating oxide and nitride materials, one or more oxide materials or nitride materials, polysilicon or amorphous silicon materials, oxides alternating with amorphous silicon, oxides alternating with polysilicon, undoped silicon alternating with doped silicon, undoped polysilicon alternating with doped polysilicon, or undoped amorphous silicon alternating with doped amorphous silicon.
9. The method of claim 1 , wherein the boron-doped amorphous silicon layer has a thickness from about 5 Å to about 200 Å.
10. A method of forming a boron-doped amorphous silicon layer on a substrate in a processing chamber, comprising:
depositing conformally a boron-doped amorphous silicon layer on patterned features formed on the substrate, comprising:
flowing dimethylamine borane [NH(CH 3 ) 2 BH 3 ] (DMAB) into the processing chamber; and
flowing a silane-containing gas mixture into the processing chamber; and
selectively removing a boron-doped amorphous silicon layer from an upper surface of the patterned features and an upper surface of the substrate using an anisotropic etching process to provide patterned features filled within sidewall spacers formed from the boron-doped amorphous silicon layer, wherein the patterned features comprise silicon nitride, polysilicon, or amorphous carbon.
11. The method of claim 10 , further comprising removing the patterned features from the substrate.
12. The method of claim 10 , wherein the silane-containing gas mixture comprises one or more silane-containing compounds selected from silane (SiH 4 ), disilane (Si 2 H 6 ), trisilane (Si 3 H 8 ), tetrasilane (Si 4 H 10 ), and combinations thereof.
13. The method of claim 10 , wherein depositing the boron-doped amorphous silicon layer on the patterned features is performed using a thermal chemical vapor deposition process.
14. The method of claim 10 , wherein depositing conformally the boron-doped amorphous silicon layer on the patterned features is performed using a plasma-enhanced chemical vapor deposition (PECVD) process.
15. The method of claim 10 , wherein the patterned features comprise amorphous carbon.
16. A method of forming an amorphous silicon layer on a substrate in a processing chamber, comprising:
depositing a predetermined thickness of a sacrificial dielectric layer over a substrate;
forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate;
depositing conformally a predetermined thickness of a boron-doped amorphous silicon layer on the patterned features and the exposed upper surface of the substrate using a thermal chemical vapor deposition process, comprising:
flowing dimethylamine borane [NH(CH 3 ) 2 BH 3 ] (DMAB) into the processing chamber; and
flowing a silane-containing gas mixture into the processing chamber; and
selectively removing the boron-doped amorphous silicon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the boron-doped amorphous silicon layer, wherein the sacrificial dielectric layer comprises silicon nitride, polysilicon, or amorphous carbon.