IP Library › Granted Patent US 12,598,930
Granted Patent B2
US 12,598,930 · App. 18/003,098 · Granted Apr 7, 2026

Conformal thermal CVD with controlled film properties and high deposition rate

Inventors: Awnish Gupta (Hillsboro, OR); Bart J. Van Schravendijk (Palo Alto, CA); Frank Loren Pasquale (Tigard, OR); Adrien LaVoie (Newberg, OR); Jason Alexander Varnell (Tigard, OR); Praneeth Ramasagaram (Boise, ID); Joseph R. Abel (West Linn, OR); Jennifer Leigh Petraglia (Lake Oswego, OR); Dustin Zachary Austin (Tigard, OR)
Assignee: Lam Research Corporation
H01L21/31116C23C16/045C23C16/06C23C16/345C23C16/401C23C16/56H01J37/32449H01J37/32724H01J37/32816H01L21/02164H01L21/0217H01L21/0228H01L21/76831H01L21/76837H01L23/5283H01L23/53266
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Quick Facts
Patent No.
US 12,598,930
App. No.
18/003,098
Granted
Apr 7, 2026
Kind
B2
Abstract

Methods and apparatuses for depositing dielectric films into features on semiconductor substrates are described herein. Methods involve depositing dielectric films by using controlled thermal chemical vapor deposition, with periodic passivation operations and densification to modulate film properties.

Claims (25)

1 . A method for processing substrates in a chamber, the method comprising:

providing a semiconductor substrate having a feature to a chamber; and

depositing dielectric material in the feature on the semiconductor substrate by:

introducing a deposition precursor and a reactant to the chamber housing the semiconductor substrate to expose the semiconductor substrate to a plasma-free environment comprising the deposition precursor and the reactant, and

introducing a passivation gas to the chamber and igniting a passivation plasma in a passivation gas ambient,

wherein the passivation plasma preferentially etches dielectric material at or near a feature opening.

2 . The method of claim 1 , further comprising, exposing the dielectric material to a densification plasma in the chamber generated in an inert gas ambient.

3 . The method of claim 1 , wherein depositing the dielectric material further comprises repeating temporally alternating between introducing the deposition precursor and the reactant in a plasma-free environment and introducing the passivation gas.

4 . The method of claim 2 , wherein depositing the dielectric material further comprises repeating temporally alternating between introducing the deposition precursor and the reactant in a plasma-free environment, introducing the passivation gas, and exposing the dielectric material to the densification plasma in the chamber generated in the inert gas ambient.

5 . A method for processing substrates in a chamber, the method comprising:

providing a semiconductor substrate having a feature to a chamber; and

depositing dielectric material comprising silicon oxide in the feature on the semiconductor substrate by:

introducing a deposition precursor and a reactant to the chamber housing the semiconductor substrate to expose the semiconductor substrate to a plasma-free environment comprising the deposition precursor and the reactant, and

exposing the dielectric material to a densification plasma in the chamber generated in an inert gas ambient.

6 . The method of claim 5 , further comprising, introducing a passivation gas to the chamber and igniting a passivation plasma.

7 . The method of claim 5 , wherein depositing the dielectric material further comprises repeating temporally alternating between introducing the deposition precursor and the reactant in a plasma-free environment and exposing the dielectric material to the densification plasma generated in the inert gas ambient.

8 . The method of claim 1 , further comprising changing chamber pressure to modulate within-wafer profile of the dielectric material.

9 . The method of claim 5 , further comprising changing chamber pressure to modulate within-wafer profile of the dielectric material.

10 . The method of claim 2 , wherein the densification plasma is generated using high frequency and low frequency plasma selected to form a dome-shaped or dish-shaped dielectric material.

11 . The method of claim 5 , wherein the densification plasma is generated using high frequency and low frequency plasma selected to form a dome-shaped or dish-shaped dielectric material.

12 . The method of claim 2 , wherein the densification plasma is generated in situ.

13 . The method of claim 5 , wherein the densification plasma is generated in situ.

14 . The method of claim 1 , wherein the passivation plasma is generated in situ.

15 . The method of claim 1 , wherein introducing the deposition precursor and the reactant and introducing the passivation gas are performed without breaking vacuum.

16 . The method of claim 2 , wherein introducing the deposition precursor and the reactant and exposing the dielectric material to the densification plasma are performed without breaking vacuum.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 13, 2023
From: GUPTA, AWNISH; VAN SCHRAVENDIJK, BART J.; PASQUALE, FRANK LOREN; LAVOIE, ADRIEN; VARNELL, JASON ALEXANDER; RAMASAGARAM, PRANEETH; ABEL, JOSEPH R.; PETRAGLIA, JENNIFER LEIGH; AUSTIN, DUSTIN ZACHARY
To: LAM RESEARCH CORPORATION
Reel/Frame 062963/0495 →
Continuity (2)
Provisional Application 62705951 · Jul 23, 2020
Related Publication 20230245896A1 · Aug 3, 2023
References Cited (400)
US 4158717A · Nelson · 1979 [cited by applicant]
US 4419809A · Riseman et al. · 1983 [cited by applicant]
US 4500563A · Ellenberger et al. · 1985 [cited by applicant]
US 4575921A · Bhagat · 1986 [cited by applicant]
US 4869781A · Euen et al. · 1989 [cited by applicant]
US 5091332A · Bohr et al. · 1992 [cited by applicant]
US 5202272A · Hsieh et al. · 1993 [cited by applicant]
US 5230929A · Caporiccio et al. · 1993 [cited by applicant]
US 5314724A · Tsukune et al. · 1994 [cited by applicant]
US 5459099A · Hsu · 1995 [cited by applicant]
US 5496608A · Matsuda et al. · 1996 [cited by applicant]
US 5528719A · Yamada · 1996 [cited by applicant]
US 5670432A · Tsai · 1997 [cited by applicant]
US 5731235A · Srinivasan et al. · 1998 [cited by applicant]
US 5854105A · Tseng · 1998 [cited by applicant]
US 5856003A · Chiu · 1999 [cited by applicant]
US 5891805A · Cheng et al. · 1999 [cited by applicant]
US 5976990A · Mercaldi et al. · 1999 [cited by applicant]
US 6039834A · Tanaka et al. · 2000 [cited by applicant]
US 6080676A · Nguyen et al. · 2000 [cited by applicant]
US 6153519A · Jain et al. · 2000 [cited by applicant]
US 6177344B1 · Xia et al. · 2001 [cited by applicant]
US 6197701B1 · Shue et al. · 2001 [cited by applicant]
US 6225175B1 · Houston · 2001 [cited by applicant]
US 6228779B1 · Bloom et al. · 2001 [cited by applicant]
US 6326322B1 · Kim et al. · 2001 [cited by applicant]
US 6380056B1 · Shue et al. · 2002 [cited by applicant]
US 6395652B2 · Kim et al. · 2002 [cited by applicant]
US 6403416B1 · Huang et al. · 2002 [cited by applicant]
US 6416822B1 · Chiang et al. · 2002 [cited by applicant]
US 6428859B1 · Chiang et al. · 2002 [cited by applicant]
US 6448192B1 · Kaushik · 2002 [cited by applicant]
US 6489254B1 · Kelkar et al. · 2002 [cited by applicant]
US 6518167B1 · You et al. · 2003 [cited by applicant]
US 6534395B2 · Werkhoven et al. · 2003 [cited by applicant]
US 6548368B1 · Narwankar et al. · 2003 [cited by applicant]
US 6599574B1 · Yieh et al. · 2003 [cited by applicant]
US 6632478B2 · Gaillard et al. · 2003 [cited by applicant]
US 6632741B1 · Clevenger et al. · 2003 [cited by applicant]
US 6638879B2 · Hsieh et al. · 2003 [cited by applicant]
US 6645574B1 · Lee et al. · 2003 [cited by applicant]
US 6709928B1 · Jenne et al. · 2004 [cited by applicant]
US 6730614B1 · Lim et al. · 2004 [cited by applicant]
US 6794284B2 · Vaartstra · 2004 [cited by applicant]
US 6926798B2 · Biberger et al. · 2005 [cited by applicant]
US 6933245B2 · Lee et al. · 2005 [cited by applicant]
US 6967159B2 · Vaartstra · 2005 [cited by applicant]
US 7019159B2 · Dussarrat et al. · 2006 [cited by applicant]
US 7041335B2 · Chung · 2006 [cited by applicant]
US 7169704B2 · Koo et al. · 2007 [cited by applicant]
US 7172792B2 · Wang et al. · 2007 [cited by applicant]
US 7211525B1 · Shanker et al. · 2007 [cited by applicant]
US 7294582B2 · Haverkort et al. · 2007 [cited by applicant]
US 7297641B2 · Todd et al. · 2007 [cited by applicant]
US 7300885B2 · Hasebe et al. · 2007 [cited by applicant]
US 7301210B2 · Abadeer et al. · 2007 [cited by applicant]
US 7351668B2 · Chou et al. · 2008 [cited by applicant]
US 7459100B2 · Kiermasz et al. · 2008 [cited by applicant]
US 7462571B2 · Hasebe et al. · 2008 [cited by applicant]
US 7465669B2 · Iyer et al. · 2008 [cited by applicant]
US 7482247B1 · Papasouliotis et al. · 2009 [cited by applicant]
US 7507676B2 · Chou et al. · 2009 [cited by applicant]
US 7510984B2 · Saito et al. · 2009 [cited by applicant]
US 7514366B2 · Trivedi et al. · 2009 [cited by applicant]
US 7611980B2 · Wells et al. · 2009 [cited by applicant]
US 7622369B1 · Lee et al. · 2009 [cited by applicant]
US 7625820B1 · Papasouliotis et al. · 2009 [cited by applicant]
US 7629267B2 · Wan et al. · 2009 [cited by applicant]
US 7651730B2 · Hasebe · 2010 [cited by applicant]
US 7651953B2 · Todd et al. · 2010 [cited by applicant]
US 7651959B2 · Fukazawa et al. · 2010 [cited by applicant]
US 7674727B2 · Yuan et al. · 2010 [cited by applicant]
US 7682657B2 · Sherman · 2010 [cited by applicant]
US 7700492B2 · Kikuchi · 2010 [cited by applicant]
US 7708859B2 · Huang et al. · 2010 [cited by applicant]
US 7713592B2 · Nguyen et al. · 2010 [cited by applicant]
US 7732343B2 · Niroomand et al. · 2010 [cited by applicant]
US 7758920B2 · Hasebe et al. · 2010 [cited by applicant]
US 7790633B1 · Tarafdar et al. · 2010 [cited by applicant]
US 7807578B2 · Bencher et al. · 2010 [cited by applicant]
US 7825039B2 · Takahashi et al. · 2010 [cited by applicant]
US 7910288B2 · Abatchev et al. · 2011 [cited by applicant]
US 7910497B2 · Olsen et al. · 2011 [cited by applicant]
US 7919416B2 · Lee et al. · 2011 [cited by applicant]
US 7939455B2 · Clark · 2011 [cited by applicant]
US 7964241B2 · Hasebe et al. · 2011 [cited by applicant]
US 7964513B2 · Todd et al. · 2011 [cited by applicant]
US 7989365B2 · Park et al. · 2011 [cited by applicant]
US 8034673B2 · Kadonaga et al. · 2011 [cited by applicant]
US 8080290B2 · Hasebe et al. · 2011 [cited by applicant]
US 8084088B2 · Huy et al. · 2011 [cited by applicant]
US 8088248B2 · Larson · 2012 [cited by applicant]
US 8105901B2 · Cheng et al. · 2012 [cited by applicant]
US 8119544B2 · Hasebe et al. · 2012 [cited by applicant]
US 8129555B2 · Cheng et al. · 2012 [cited by applicant]
US 8178448B2 · Nodera et al. · 2012 [cited by applicant]
US 8227032B2 · Dussarrat et al. · 2012 [cited by applicant]
US 8257789B2 · Matsunaga et al. · 2012 [cited by applicant]
US 8298628B2 · Yang et al. · 2012 [cited by applicant]
US 8298954B1 · Arnold et al. · 2012 [cited by applicant]
US 8357618B2 · Bencher et al. · 2013 [cited by applicant]
US 8366953B2 · Kohno et al. · 2013 [cited by applicant]
US 8383525B2 · Raisanen et al. · 2013 [cited by applicant]
US 8394466B2 · Hong et al. · 2013 [cited by applicant]
US 8580699B2 · Mallick · 2013 [cited by applicant]
US 8592328B2 · Hausmann et al. · 2013 [cited by applicant]
US 8623770B1 · Gao et al. · 2014 [cited by applicant]
US 8669185B2 · Onizawa et al. · 2014 [cited by applicant]
US 8703578B2 · Hoentschel et al. · 2014 [cited by applicant]
US 8728955B2 · Lavoie et al. · 2014 [cited by applicant]
US 8728956B2 · Lavoie et al. · 2014 [cited by applicant]
US 8753984B2 · Murakami et al. · 2014 [cited by applicant]
US 8791034B2 · Shealy et al. · 2014 [cited by applicant]
US 8802882B2 · Wang et al. · 2014 [cited by applicant]
US 8846484B2 · Lee et al. · 2014 [cited by applicant]
US 8936977B2 · Hoentschel et al. · 2015 [cited by applicant]
US 8975704B2 · Hoentschel et al. · 2015 [cited by applicant]
US 9023693B1 · Lin et al. · 2015 [cited by applicant]
US 9023737B2 · Beynet et al. · 2015 [cited by applicant]
US 9070555B2 · Hausmann et al. · 2015 [cited by applicant]
US 9095869B2 · Kilpi et al. · 2015 [cited by applicant]
US 9214333B1 · Sims et al. · 2015 [cited by applicant]
US 9355839B2 · Swaminathan et al. · 2016 [cited by applicant]
US 9359513B1 · Takashima et al. · 2016 [cited by applicant]
US 9379210B2 · Mountsier et al. · 2016 [cited by applicant]
US 9390909B2 · Pasquale et al. · 2016 [cited by applicant]
US 9406693B1 · Pang et al. · 2016 [cited by applicant]
US 9443731B1 · O'Meara et al. · 2016 [cited by applicant]
US 9472506B2 · Conklin et al. · 2016 [cited by applicant]
US 9502234B2 · Xiao et al. · 2016 [cited by applicant]
US 9502238B2 · Danek et al. · 2016 [cited by applicant]
US 9508604B1 · Sung et al. · 2016 [cited by applicant]
US 9530663B1 · Shih et al. · 2016 [cited by applicant]
US 9564312B2 · Henri et al. · 2017 [cited by applicant]
US 9576817B1 · Cheng et al. · 2017 [cited by applicant]
US 9589790B2 · Henri et al. · 2017 [cited by applicant]
US 9601693B1 · Henri et al. · 2017 [cited by applicant]
US 9611544B2 · Lavoie et al. · 2017 [cited by applicant]
US 9670579B2 · Hausmann et al. · 2017 [cited by applicant]
US 9721784B2 · Behera et al. · 2017 [cited by applicant]
US 9865455B1 · Sims et al. · 2018 [cited by applicant]
US 9865815B2 · Hausmann · 2018 [cited by applicant]
US 9875891B2 · Henri et al. · 2018 [cited by applicant]
US 9892933B2 · Peng et al. · 2018 [cited by applicant]
US 9905415B2 · Chandra et al. · 2018 [cited by applicant]
US 10074543B2 · Mahorowala et al. · 2018 [cited by applicant]
US 10134579B2 · Baldasseroni et al. · 2018 [cited by applicant]
US 10141505B2 · Hausmann · 2018 [cited by applicant]
US 10269559B2 · Abel et al. · 2019 [cited by applicant]
US 10410872B2 · Cheng et al. · 2019 [cited by applicant]
US 10454029B2 · Mckerrow et al. · 2019 [cited by applicant]
US 10559465B2 · Cheng et al. · 2020 [cited by applicant]
US 10629435B2 · Swaminathan et al. · 2020 [cited by applicant]
US 10658172B2 · Abel et al. · 2020 [cited by applicant]
US 10804099B2 · Henri et al. · 2020 [cited by applicant]
US 10832908B2 · Lavoie · 2020 [cited by applicant]
US 12341002B2 · Bayati et al. · 2025 [cited by applicant]
US 12412742B2 · Gupta et al. · 2025 [cited by applicant]
US 20010028922A1 · Sandhu · 2001 [cited by applicant]
US 20020001889A1 · Kim et al. · 2002 [cited by applicant]
US 20020001929A1 · Biberger et al. · 2002 [cited by applicant]
US 20020052119A1 · Van Cleemput · 2002 [cited by applicant]
US 20020066411A1 · Chiang et al. · 2002 [cited by applicant]
US 20020068466A1 · Lee et al. · 2002 [cited by applicant]
US 20020130385A1 · Jung et al. · 2002 [cited by applicant]
US 20030034244A1 · Yasar et al. · 2003 [cited by applicant]
US 20030092280A1 · Lee et al. · 2003 [cited by applicant]
US 20030116421A1 · Xu et al. · 2003 [cited by applicant]
US 20030143841A1 · Yang et al. · 2003 [cited by applicant]
US 20040043570A1 · Fujisaki et al. · 2004 [cited by applicant]
US 20040077184A1 · Anderson et al. · 2004 [cited by applicant]
US 20040096582A1 · Wang et al. · 2004 [cited by applicant]
US 20040121085A1 · Wang · 2004 [cited by examiner]
US 20050025885A1 · McSwiney et al. · 2005 [cited by applicant]
US 20050042865A1 · Cabral, Jr. et al. · 2005 [cited by applicant]
US 20050059259A1 · O'Meara et al. · 2005 [cited by applicant]
US 20050100670A1 · Dussarrat et al. · 2005 [cited by applicant]
US 20050109276A1 · Iyer et al. · 2005 [cited by applicant]
US 20050118837A1 · Todd et al. · 2005 [cited by applicant]
US 20050123690A1 · Derderian et al. · 2005 [cited by applicant]
US 20050124109A1 · Quevedo-Lopez et al. · 2005 [cited by applicant]
US 20050142878A1 · Jung · 2005 [cited by applicant]
US 20050158983A1 · Hoshi et al. · 2005 [cited by applicant]
US 20050159017A1 · Kim et al. · 2005 [cited by applicant]
US 20050170104A1 · Jung et al. · 2005 [cited by applicant]
US 20050196977A1 · Saito et al. · 2005 [cited by applicant]
US 20050199013A1 · Vandroux et al. · 2005 [cited by applicant]
US 20050227017A1 · Senzaki et al. · 2005 [cited by applicant]
US 20050277257A1 · Byun et al. · 2005 [cited by applicant]
US 20050287309A1 · Veerasamy · 2005 [cited by applicant]
US 20050287775A1 · Hasebe et al. · 2005 [cited by applicant]
US 20060003557A1 · Cabral, Jr. et al. · 2006 [cited by applicant]
US 20060008656A1 · Veerasamy · 2006 [cited by applicant]
US 20060032442A1 · Hasebe · 2006 [cited by applicant]
US 20060032443A1 · Hasebe et al. · 2006 [cited by applicant]
US 20060046508A1 · Nemani et al. · 2006 [cited by applicant]
US 20060084283A1 · Paranjpe et al. · 2006 [cited by applicant]
US 20060088985A1 · Haverkort et al. · 2006 [cited by applicant]
US 20060119248A1 · Howard et al. · 2006 [cited by applicant]
US 20060199357A1 · Wan et al. · 2006 [cited by applicant]
US 20060263699A1 · Abatchev et al. · 2006 [cited by applicant]
US 20060269692A1 · Balseanu · 2006 [cited by examiner]
US 20060273456A1 · Sant et al. · 2006 [cited by applicant]
US 20060286776A1 · Ranish et al. · 2006 [cited by applicant]
US 20060289385A1 · Kikuchi · 2006 [cited by applicant]
US 20070032047A1 · Hasebe et al. · 2007 [cited by applicant]
US 20070066038A1 · Sadjadi et al. · 2007 [cited by applicant]
US 20070099431A1 · Li · 2007 [cited by applicant]
US 20070137572A1 · Matsuura et al. · 2007 [cited by applicant]
US 20070148350A1 · Rahtu et al. · 2007 [cited by applicant]
US 20070148968A1 · Kwon et al. · 2007 [cited by applicant]
US 20070167028A1 · Chou et al. · 2007 [cited by applicant]
US 20070190782A1 · Park · 2007 [cited by applicant]
US 20070212850A1 · Ingle et al. · 2007 [cited by applicant]
US 20070218661A1 · Shroff et al. · 2007 [cited by applicant]
US 20070238299A1 · Niroomand et al. · 2007 [cited by applicant]
US 20070238301A1 · Cabral et al. · 2007 [cited by applicant]
US 20070238316A1 · Ohashi · 2007 [cited by applicant]
US 20070251444A1 · Gros-Jean et al. · 2007 [cited by applicant]
US 20070298585A1 · Lubomirsky et al. · 2007 [cited by applicant]
US 20080038936A1 · Todd et al. · 2008 [cited by applicant]
US 20080063791A1 · Hasebe et al. · 2008 [cited by applicant]
US 20080081104A1 · Hasebe et al. · 2008 [cited by applicant]
US 20080081470A1 · Clark · 2008 [cited by applicant]
US 20080119057A1 · Chua et al. · 2008 [cited by applicant]
US 20080124946A1 · Xiao et al. · 2008 [cited by applicant]
US 20080138996A1 · Nishizuka · 2008 [cited by applicant]
US 20080139003A1 · Pirzada et al. · 2008 [cited by applicant]
US 20080142483A1 · Hua et al. · 2008 [cited by applicant]
US 20080213479A1 · Chou et al. · 2008 [cited by applicant]
US 20080237726A1 · Dyer · 2008 [cited by applicant]
US 20080242116A1 · Clark · 2008 [cited by applicant]
US 20080260969A1 · Dussarrat et al. · 2008 [cited by applicant]
US 20080274302A1 · Hasebe et al. · 2008 [cited by applicant]
US 20080311760A1 · Nodera et al. · 2008 [cited by applicant]
US 20080318443A1 · Kim et al. · 2008 [cited by applicant]
US 20090018668A1 · Galbraith · 2009 [cited by applicant]
US 20090035665A1 · Tran · 2009 [cited by applicant]
US 20090075490A1 · Dussarrat · 2009 [cited by applicant]
US 20090130797A1 · Lee et al. · 2009 [cited by applicant]
US 20090146322A1 · Weling et al. · 2009 [cited by applicant]
US 20090148625A1 · Yeom et al. · 2009 [cited by applicant]
US 20090155606A1 · Yoon et al. · 2009 [cited by applicant]
US 20090163041A1 · Mungekar et al. · 2009 [cited by applicant]
US 20090191722A1 · Hasebe et al. · 2009 [cited by applicant]
US 20090232985A1 · Dussarrat et al. · 2009 [cited by applicant]
US 20090286381A1 · Van Schravendijk et al. · 2009 [cited by applicant]
US 20100003797A1 · Smith · 2010 [cited by applicant]
US 20100038727A1 · Chakravarthi et al. · 2010 [cited by applicant]
US 20100099271A1 · Hausmann et al. · 2010 [cited by applicant]
US 20100102407A1 · Kajiyama et al. · 2010 [cited by applicant]
US 20100124618A1 · Kobayashi et al. · 2010 [cited by applicant]
US 20100124621A1 · Kobayashi et al. · 2010 [cited by applicant]
US 20100136260A1 · Matsunaga et al. · 2010 [cited by applicant]
US 20100136313A1 · Shimizu et al. · 2010 [cited by applicant]
US 20100151681A1 · Knapp et al. · 2010 [cited by applicant]
US 20100221925A1 · Lee et al. · 2010 [cited by applicant]
US 20100267238A1 · Johnson et al. · 2010 [cited by applicant]
US 20100283097A1 · Endoh · 2010 [cited by examiner]
US 20100304047A1 · Yang et al. · 2010 [cited by applicant]
US 20100304574A1 · Nodera et al. · 2010 [cited by applicant]
US 20100310791A1 · Shimazu et al. · 2010 [cited by applicant]
US 20110003477A1 · Park et al. · 2011 [cited by applicant]
US 20110014795A1 · Lee et al. · 2011 [cited by applicant]
US 20110021010A1 · Cheng et al. · 2011 [cited by applicant]
US 20110086516A1 · Lee et al. · 2011 [cited by applicant]
US 20110127582A1 · Cheng et al. · 2011 [cited by applicant]
US 20110129978A1 · Cheng et al. · 2011 [cited by applicant]
US 20110151142A1 · Seamons et al. · 2011 [cited by applicant]
US 20110159673A1 · Hanawa et al. · 2011 [cited by applicant]
US 20110176967A1 · Okuda et al. · 2011 [cited by applicant]
US 20110183528A1 · Wang et al. · 2011 [cited by applicant]
US 20110223769A1 · Ko et al. · 2011 [cited by applicant]
US 20110244142A1 · Cheng et al. · 2011 [cited by applicant]
US 20110256734A1 · Hausmann et al. · 2011 [cited by applicant]
US 20110262642A1 · Xiao et al. · 2011 [cited by applicant]
US 20120009802A1 · Lavoie et al. · 2012 [cited by applicant]
US 20120009803A1 · Jung et al. · 2012 [cited by applicant]
US 20120011889A1 · Bogdahn et al. · 2012 [cited by applicant]
US 20120028469A1 · Onizawa et al. · 2012 [cited by applicant]
US 20120058282A1 · Hong et al. · 2012 [cited by applicant]
US 20120068347A1 · Isobayashi et al. · 2012 [cited by applicant]
US 20120070957A1 · Mallick et al. · 2012 [cited by applicant]
US 20120088369A1 · Weidman et al. · 2012 [cited by applicant]
US 20120104347A1 · Quick · 2012 [cited by applicant]
US 20120108079A1 · Mahajani · 2012 [cited by applicant]
US 20120115074A1 · Zhang et al. · 2012 [cited by applicant]
US 20120142194A1 · Hwang · 2012 [cited by applicant]
US 20120156882A1 · Lee et al. · 2012 [cited by applicant]
US 20120156888A1 · Sato et al. · 2012 [cited by applicant]
US 20120164846A1 · Ha et al. · 2012 [cited by applicant]
US 20120171846A1 · Hwang · 2012 [cited by applicant]
US 20120177841A1 · Thompson · 2012 [cited by applicant]
US 20120213940A1 · Mallick · 2012 [cited by applicant]
US 20120244711A1 · Yin et al. · 2012 [cited by applicant]
US 20120264305A1 · Nakano · 2012 [cited by applicant]
US 20120282418A1 · Chou et al. · 2012 [cited by applicant]
US 20120315394A1 · Ito · 2012 [cited by applicant]
US 20130040447A1 · Swaminathan et al. · 2013 [cited by applicant]
US 20130065404A1 · Weidman et al. · 2013 [cited by applicant]
US 20130071580A1 · Weidman et al. · 2013 [cited by applicant]
US 20130084688A1 · O'Meara et al. · 2013 [cited by applicant]
US 20130113073A1 · Liu et al. · 2013 [cited by applicant]
US 20130115783A1 · Kim et al. · 2013 [cited by applicant]
US 20130129940A1 · Xiao et al. · 2013 [cited by applicant]
US 20130161629A1 · Han et al. · 2013 [cited by applicant]
US 20130189845A1 · Kim et al. · 2013 [cited by applicant]
US 20130189854A1 · Hausmann et al. · 2013 [cited by applicant]
US 20130196082A1 · Spence et al. · 2013 [cited by applicant]
US 20130200384A1 · Mieno · 2013 [cited by applicant]
US 20130210236A1 · Ogihara et al. · 2013 [cited by applicant]
US 20130252437A1 · Sano et al. · 2013 [cited by applicant]
US 20130273704A1 · Jee et al. · 2013 [cited by applicant]
US 20130280919A1 · Yuasa et al. · 2013 [cited by applicant]
US 20130302980A1 · Chandrashekar et al. · 2013 [cited by applicant]
US 20130327636A1 · Majetich et al. · 2013 [cited by applicant]
US 20130344248A1 · Clark · 2013 [cited by applicant]
US 20140023794A1 · Mahajani et al. · 2014 [cited by applicant]
US 20140099797A1 · Terasaki · 2014 [cited by applicant]
US 20140113455A1 · Reimer et al. · 2014 [cited by applicant]
US 20140113457A1 · Sims et al. · 2014 [cited by applicant]
US 20140120737A1 · Swaminathan et al. · 2014 [cited by applicant]
US 20140134812A1 · Kim et al. · 2014 [cited by applicant]
US 20140141625A1 · Fukazawa et al. · 2014 [cited by applicant]
US 20140141626A1 · Hausmann et al. · 2014 [cited by applicant]
US 20140158580A1 · Xiao et al. · 2014 [cited by applicant]
US 20140170847A1 · Iuchi et al. · 2014 [cited by applicant]
US 20140170853A1 · Shamma et al. · 2014 [cited by applicant]
US 20140193983A1 · Lavoie · 2014 [cited by applicant]
US 20140216337A1 · Swaminathan et al. · 2014 [cited by applicant]
US 20140262038A1 · Wang et al. · 2014 [cited by applicant]
US 20140273477A1 · Niskanen et al. · 2014 [cited by applicant]
US 20140273528A1 · Niskanen et al. · 2014 [cited by applicant]
US 20140273529A1 · Nguyen et al. · 2014 [cited by applicant]
US 20140273530A1 · Nguyen et al. · 2014 [cited by applicant]
US 20140273531A1 · Niskanen et al. · 2014 [cited by applicant]
US 20140302686A1 · Pan et al. · 2014 [cited by applicant]
US 20150004805A1 · Omstead et al. · 2015 [cited by applicant]
US 20150017812A1 · Chandrasekharan et al. · 2015 [cited by applicant]
US 20150021712A1 · Zschaetzsch et al. · 2015 [cited by applicant]
US 20150031218A1 · Karakawa · 2015 [cited by applicant]
US 20150056540A1 · Fukuda · 2015 [cited by applicant]
US 20150126042A1 · Pasquale et al. · 2015 [cited by applicant]
US 20150132965A1 · Devilliers et al. · 2015 [cited by applicant]
US 20150137061A1 · Donghi et al. · 2015 [cited by applicant]
US 20150155198A1 · Tsai et al. · 2015 [cited by applicant]
US 20150162416A1 · Chang et al. · 2015 [cited by applicant]
US 20150167163A1 · Kubota et al. · 2015 [cited by applicant]
US 20150200110A1 · Li et al. · 2015 [cited by applicant]
US 20150217330A1 · Haukka et al. · 2015 [cited by applicant]
US 20150243708A1 · Ravasio · 2015 [cited by applicant]
US 20150249153A1 · Morin et al. · 2015 [cited by applicant]
US 20150251917A1 · Hong et al. · 2015 [cited by applicant]
US 20150255308A1 · Lin et al. · 2015 [cited by applicant]
US 20150259791A1 · Hausmann et al. · 2015 [cited by applicant]
US 20150315704A1 · Nakano et al. · 2015 [cited by applicant]
US 20160020092A1 · Kang et al. · 2016 [cited by applicant]
US 20160042950A1 · Dai et al. · 2016 [cited by applicant]
US 20160046501A1 · Kverel et al. · 2016 [cited by applicant]
US 20160049307A1 · Chen · 2016 [cited by applicant]
US 20160064224A1 · Hung et al. · 2016 [cited by applicant]
US 20160079054A1 · Chen et al. · 2016 [cited by applicant]
US 20160093484A1 · Marsh · 2016 [cited by applicant]
US 20160099143A1 · Yan et al. · 2016 [cited by applicant]
US 20160109804A1 · Huli · 2016 [cited by applicant]
US 20160111297A1 · Chen et al. · 2016 [cited by applicant]
US 20160148799A1 · Wang et al. · 2016 [cited by applicant]
US 20160148800A1 · Henri et al. · 2016 [cited by applicant]
US 20160148806A1 · Henri et al. · 2016 [cited by applicant]
US 20160155739A1 · Ting et al. · 2016 [cited by applicant]
US 20160163557A1 · Hudson et al. · 2016 [cited by applicant]
US 20160172194A1 · Kunnen et al. · 2016 [cited by applicant]
US 20160190008A1 · Chandrashekar et al. · 2016 [cited by applicant]
US 20160218002A1 · Steinbrenner et al. · 2016 [cited by applicant]
US 20160225640A1 · Raley et al. · 2016 [cited by applicant]
US 20160247678A1 · Feng et al. · 2016 [cited by applicant]
US 20160247680A1 · O'Meara et al. · 2016 [cited by applicant]
US 20160254171A1 · Shamma et al. · 2016 [cited by applicant]
US 20160284539A1 · Horita et al. · 2016 [cited by applicant]
US 20160284567A1 · Reilly et al. · 2016 [cited by applicant]
US 20160293398A1 · Danek et al. · 2016 [cited by applicant]
US 20160293418A1 · Pasquale et al. · 2016 [cited by applicant]
US 20160300718A1 · Raley et al. · 2016 [cited by applicant]
US 20160329238A1 · Tang et al. · 2016 [cited by applicant]
US 20160336178A1 · Swaminathan et al. · 2016 [cited by applicant]
US 20160336187A1 · Liou et al. · 2016 [cited by applicant]
US 20160343580A1 · Hudson · 2016 [cited by applicant]
US 20160365425A1 · Chen et al. · 2016 [cited by applicant]
US 20160372334A1 · Mignot et al. · 2016 [cited by applicant]
US 20170069510A1 · Kal et al. · 2017 [cited by applicant]
US 20170092496A1 · Devilliers · 2017 [cited by applicant]
US 20170092857A1 · Hausmann · 2017 [cited by applicant]
US 20170110550A1 · Tsai et al. · 2017 [cited by applicant]
US 20170114459A1 · Saly et al. · 2017 [cited by applicant]
US 20170117134A1 · Henri et al. · 2017 [cited by applicant]
US 20170125436A1 · Sharangpani et al. · 2017 [cited by applicant]
US 20170148637A1 · Devilliers · 2017 [cited by applicant]
US 20170170015A1 · Kim et al. · 2017 [cited by applicant]
US 20170170026A1 · Hudson et al. · 2017 [cited by applicant]
US 20170207082A1 · Wang et al. · 2017 [cited by applicant]