Multiplying pattern density by single sidewall imaging transfer
A method for fabricating an integrated circuit includes patterning a mandrel over a layer to be patterned. Dopants are implanted into exposed sidewalls of the mandrel to form at least two doped layers having at least one undoped region adjacent to the doped layers. The doped layers are selectively etched away to form pillars from the undoped regions. The layer to be patterned is etched using the pillars as an etch mask to form features for an integrated circuit device. A semiconductor device is also disclosed.
1. A method for fabricating an integrated circuit, comprising:
patterning a mandrel over a layer to be patterned;
implanting dopants into exposed sidewalls of the mandrel to form at least two doped layers having at least one undoped region adjacent to the doped layers;
selectively etching away the doped layers to form pillars from the undoped regions; and etching the layer to be patterned using the pillars as an etch mask to form features for an integrated circuit device.
2. The method as recited in claim 1 , wherein implanting dopants includes implanting dopants into exposed sidewalls of the mandrel using at least one angled implantation processes to form at least two buried layers.
3. The method as recited in claim 2 , wherein selectively etching away the doped layer to form pillars from the undoped regions includes forming a three pillar structure to provide a triple pattern density structure in a single surface image transfer process sequence.
4. The method as recited in claim 2 , wherein the at least two doped layers have at least one of different widths and different depths from a sidewall surface of the mandrel.
5. The method as recited in claim 1 , wherein the layer to be patterned is a substrate and etching the layer to be patterned includes forming fin features for fin field effect transistor devices.
6. The method as recited in claim 1 , wherein the mandrel includes one of amorphous silicon and polysilicon, and implanting dopants includes implanting arsenic into the exposed sidewalls.
7. The method as recited in claim 1 , wherein the features for the integrated circuit device include a width of less than a minimum feature size achievable with lithography.
8. The method as recited in claim 1 , wherein implanting dopants includes a surface doping to form at least one surface doped layer and the method further comprises epitaxially growing undoped regions on the at least one surface doped layer.
9. The method as recited in claim 1 , wherein the pillars form a mask feature having a spacing of less than a minimum feature size achievable by lithography.
10. A method for fabricating an integrated circuit, comprising:
patterning a mandrel over a substrate, the mandrel having a mask layer formed thereon;
implanting dopants into exposed sidewalls of the mandrel to form two buried layers having undoped regions adjacent to the buried layers;
removing the mask layer;
selectively etching away the buried layers to form pillars from the undoped regions; and etching the substrate using the pillars as an etch mask to form features for an integrated circuit device.
11. The method as recited in claim 10 , wherein implanting dopants includes implanting dopants into exposed sidewalls of the mandrel using at least one angled implantation process to form the buried layers.
12. The method as recited in claim 11 , wherein selectively etching away the buried layers to form pillars from the undoped regions includes forming a three pillar structure to provide a triple pattern density structure in a single surface image transfer process sequence.
13. The method as recited in claim 10 , wherein the two buried layers have at least one of different widths and different depths from a sidewall surface of the mandrel.
14. The method as recited in claim 10 , wherein the features for the integrated circuit device include a width of less than a minimum feature size achievable with lithography.
15. A method for fabricating an integrated circuit, comprising:
patterning a mandrel over a substrate, the mandrel having a mask layer formed thereon;
implanting dopants into exposed sidewalls of the mandrel to form two surface layers having an undoped region therebetween;
epitaxially growing undoped regions on two surface layers of the exposed sidewalls;
removing the mask layer;
selectively etching away the surface layers to form pillars from the undoped regions; and etching the substrate using the pillars as an etch mask to form features for an integrated circuit device.
16. The method as recited in claim 15 , wherein implanting dopants includes implanting dopants into exposed sidewalls of the mandrel using at least two angled implantation processes to form the surface layers.
17. The method as recited in claim 16 , wherein selectively etching away the buried layers to form pillars from the undoped regions includes forming a three pillar structure to provide a triple pattern density structure in a single surface image transfer process sequence.
18. The method as recited in claim 15 , wherein the two surface layers have at least one of different widths and different depths from a sidewall surface of the mandrel.
19. The method as recited in claim 15 , wherein the features for the integrated circuit device include a width of less than a minimum feature size achievable with lithography.