Power modulation for etching high aspect ratio features
A method of etching a substrate is described. The method includes disposing a substrate having a surface exposing a first material and a second material in a processing space of a plasma processing system, and performing a modulated plasma etching process to selectively remove the first material at a rate greater than removing the second material. The modulated plasma etching process comprises a power modulation cycle having sequential power application steps that includes: applying a radio frequency (RF) signal to the plasma processing system at a first power level, applying the RF signal to the plasma processing system at a second power level, and applying the RF signal to the plasma processing system at a third power level. Thereafter, the power modulation cycle is repeated at least one more cycle, wherein each modulation cycle includes a modulation time period.
1. A method of etching, comprising:
disposing a substrate having a surface exposing a first material and a second material n a processing space of a plasma processing system;
performing a modulated plasma etching process to selectively remove the first material at a rate greater than removing the second material, the modulated plasma etching process comprising a power modulation cycle having sequential power application steps that includes:
applying a radio frequency (RF) signal to the plasma processing system at a first power level to form an opening through at least one of a passivating layer, a reaction byproduct, and a residue located on the first material to expose the first material to the opening and to selectively remove at least a first portion of the first material,
applying the RF signal to the plasma processing system at a second power level to selectively remove at least a second portion of the first material, and
applying the RF signal to the plasma processing system at a third power level to purge the processing space; and
repeating the power modulation cycle at east one more cycle, each power modulation cycle including a modulation time period,
wherein the first, second, and third power levels differ in value from one another.
2. The method of claim 1 , wherein the power modulation cycle includes a periodic modulation cycle.
3. The method of claim 1 , wherein the first power level exceeds the second power level.
4. The method of claim 2 , wherein the second power level exceeds the third power level.
5. The method of claim 4 , wherein the third power level includes a power-off state.
6. The method of claim 4 , wherein the second power level ranges from 20% to 80% of the first power level.
7. The method of claim 4 , wherein the second power level angles from 40% to 60% of the first power level.
8. The method of claim 4 , wherein the third power level ranges from 0% to 50% of the second power level.
9. The method of claim 4 , wherein the third power level ranges from 0% to 20% of the second power level.
10. The method of claim 2 , wherein a modulation frequency of the power modulation cycle ranges from 1 Hz to 100 kHz, and in each modulation cycle the RF signal is sequentially applied at the first power level, followed by application of the RF signal at the second power level, and thereafter application of the RE signal at the third power level.
11. The method of claim 10 , wherein the modulation frequency ranges from 5 Hz to 50 Hz.
12. The method of claim 1 , wherein the modulation frequency of the power modulation cycle is equal to or greater than 1 kHz, and in each modulation cycle the RF signal is sequentially applied at the first power level, followed by application of the RE signal at the second power level, and thereafter application of the RF signal at the third power level.
13. The method of claim 1 , wherein the applying the RF signal at the first power level ranges from 5% to 20% of the time period of the power modulation cycle.
14. The method of claim 13 , wherein the applying the RE signal at the second power level ranges from 30% to 50% of the time period of the power modulation cycle.
15. The method of claim 13 , wherein the applying the RF signal at the third power level ranges from 30% to 60% of the time period of the power modulation cycle.
16. The method of claim 1 , wherein the RF signal is applied to a substrate holder upon which the substrate is positioned.
17. The method of claim 16 , wherein the substrate holder positions the substrate facing an RF powered electrode.
18. The method of claim 16 , wherein the substrate holder positions the substrate facing a slotted plane antenna.
19. The method of claim 18 , wherein power at a microwave frequency is coupled to the slotted plane antenna.
20. The method of claim 1 , wherein the first power level immediately transitions to the second power level, and the second power level immediately transitions to the third power level in a stepped fashion.
21. The method of claim 1 , wherein the first material and the second material are silicon containing materials.