Substrate bonding apparatus having adsorption sectors with different vacuum pressures and method of manufacturing semiconductor device using the same

1. A method of manufacturing a semiconductor device, the method comprising:

fabricating a first substrate;

fabricating a second substrate different from the first substrate; and

bonding the first substrate to the second substrate,

wherein bonding the first substrate to the second substrate comprises:

adsorbing a first portion of the second substrate having a [100] or [101] crystal direction with a first vacuum pressure; and

adsorbing a second portion of the second substrate having a [110] crystal direction with a second vacuum pressure less than the first vacuum pressure.

2. The method of claim 1 , wherein fabricating the first substrate comprises:

forming on the first substrate a pixel array of an image sensor.

3. The method of claim 2 , wherein the pixel array of the image sensor is formed on a front surface of the first substrate, and wherein the method further comprises:

polishing a backside surface of the first substrate,

wherein the backside surface is opposite the front surface.

4. The method of claim 2 , wherein fabricating the second substrate comprises:

forming driving members that control the pixel array of the image sensor, where the driving members are disposed on the second substrate.

5. The method of claim 4 , wherein the driving members are bonded to the pixel array of the image sensor.

6. The method of claim 1 , wherein the first vacuum pressure is provided to the first portion of the second substrate at the same time that the second vacuum pressure is provided to the second portion of the second substrate.

7. The method of claim 6 , wherein the first vacuum pressure is greater than the second vacuum pressure, and the first portion of the second substrate has a lower Young's modulus than the second portion of the second substrate.

8. A method comprising:

providing a first substrate;

providing a first chuck having first adsorption sectors configured to adsorb the first substrate at a first pressure and second adsorption sectors configured to adsorb the first substrate at a second pressure different from the first pressure;

aligning the first substrate with the first chuck so that the first adsorption sectors align with first portions of the first substrate having a [110] crystal direction aligned radially from a center of the first substrate toward an edge of the first substrate, and so that the second adsorption sectors align with second portions of the first substrate having a [100] or [010] crystal direction aligned radially from a center of the first substrate toward an edge of the first substrate;

adsorbing the first substrate to the first chuck; and

pushing the first substrate away from the first chuck by pushing the first substrate at a center of the first substrate.

9. The method of claim 8 , wherein:

the first pressure is smaller than the second pressure.

10. The method of claim 8 wherein an alignment pin disposed on an edge of the first chuck is used to perform the aligning.

11. The method of claim 8 , wherein each of the first and second adsorption sectors has an azimuth angle of about 45°.

12. The method of claim 8 ,

wherein the first adsorption sectors comprise holes configured to fluidly connect the first adsorption sectors to a first vacuum pump, and

wherein the second adsorption sectors comprise holes configured to fluidly connect the second adsorption sectors to a second vacuum pump.

13. The method of claim 12 ,

wherein the first vacuum pump provides the first adsorption sectors with a first vacuum pressure; and

wherein the second vacuum pump provides the second adsorption sectors with a second vacuum pressure greater than the first vacuum pressure.