Etching composition and method for fabricating semiconductor device by using the same
An etching composition may include a peracetic acid mixture, a fluorine compound, an organic solvent (e.g., acetate-series organic solvent), and water. The etching composition may be used to selectively etch silicon-germanium (SiGe).
1. An etching composition comprising:
a peracetic acid mixture;
a fluorine compound;
an acetate series organic solvent;
at least one silicon compound, wherein
the at least one silicon compound includes one of alkoxy silane compound, silanol compound, oxime silane compound, disilazane compound, or disiloxane compound, and
the silicon compound is included in a range of 0.01 wt % to 5 wt % with respect to a total weight of the etching composition; and
water, wherein
the peracetic acid mixture includes an acetic acid solution and a hydrogen peroxide solution mixed together with a volume ratio of 33:10 to 33:33, and at least one of
the acetate series organic solvent is included in a range of 15 wt % to 65 wt % with respect to the total weight of the etching composition, or
the fluorine compound is included in a range of 0.01 wt % to 5 wt % with respect to the total weight of the etching composition.
2. The etching composition of claim 1 , wherein
the acetic acid solution is acetic acid aqueous solution of 100 percent concentration, and
the hydrogen peroxide solution is hydrogen peroxide aqueous solution of 31 percent concentration.
3. The etching composition of claim 1 , wherein the peracetic acid mixture includes acetic acid, hydrogen peroxide, and peracetic acid.
4. The etching composition of claim 3 , wherein
the peracetic acid mixture includes an aging catalyst, and
the aging catalyst includes at least one of sulfuric acid or methanesulfonic acid.
5. The etching composition of claim 1 , wherein the acetate series organic solvent includes at least one of methylacetate, ethylacetate, sodium acetate, isopropyl acetate, n-propyl acetate, butyl acetate, n-butyl acetate, isobutyl acetate, vinyl acetate, pentyl acetate, octyl acetate, amyl acetate, or 2-ethoxyethyl acetate.
6. The etching composition of claim 1 , wherein the fluorine compound includes at least one of HF, NaF, KF, AlF 2 , LiF 4 , CaF 3 , NaHF 6 , NH 4 F, NH 4 HF 2 , (CH 3 ) 4 NF, KHF 2 , HBF 4 , NH 4 BF 4 , KBF 4 , or H 2 SiF 6 .
7. An etching composition comprising:
a peracetic acid mixture;
a fluorine compound;
an acetate series organic solvent;
water; and
at least one silicon compound, wherein the at least one silicon compound includes one of an alkoxy silane compound, a silanol compound, an oxime silane compound, a disilazane compound, or a disiloxane compound.
8. The etching composition of claim 7 , wherein
the at least one silicon compound includes the alkoxy silane compound, and
the alkoxy silane compound includes one of tert-butylmethoxydimethylsilane, 3-cyanopropyl dimethyl methoxysilane, ethoxy(trimethyl)silane, methoxytrimethylsilane, hexyl(dimethoxy) silane, methyldiethoxysilane, triethoxysilane, 3-aminopropyltriethoxysilane, 4-aminobutyldimethylmethoxysilane, 3-aminopropyldimethylethoxysilane, or 3-(2-aminoethylamino)propyltrimethoxysilane.
9. The etching composition of claim 7 , wherein
the at least one silicon compound includes the silanol compound, and
the silanol compound includes one of trimethylsilanol, dimethylsilandiol, diphenylsilanediol, silanetriol, 3-aminopropylsilanetriol, 1-methylsilanetriol, 2-methyl-2-propylsilanetrial, methyltriacetatesilanetriol, 2-(chloroethyl)triacetate silanetriol, or 3-(hydroxypropyl) silanetriol.
10. The etching composition of claim 7 , wherein
the at least one silicon compound includes the oxime silane compound, and
the oxime silane compound includes one of di(ethylketoxime)silane, mono(ethylketoxime)silane, tris(ethylketoxime)silane, tetra(ethylketoxime)silane, methyltris(methylethylketoxime)silane, methyltris(acetoxme)silane, methyltris (methylisobutylketmdme)silane, dimethyldi(methylethylketoxime)silane, trimethyl(methylethylketoxime)silane, tetra(methylethylketoxime)silane, tetra(methylisobutylketoxime)silane, vinyltris(methylethylketoxime)silane, methylvinyldi(methylethylketoxime)silane, vinyltris (methylethylketoxime)silane, methylvinykii(methylethylketoxime)silane, methylvinyldi(cyclohexanoneoxime)silane, vinyltris(methylisobutylketoxime)silane), or phenyltris(methylethylketoxime)silane.
11. The etching composition of claim 7 , wherein
the at least one silicon compound includes the disilazane compound and the disiloxane compound,
the disilazane compound includes hexamethyldisilazane, and
the disiloxane compound includes one of hexamethyldisiloxane, octamethylcyclotetrasiloxane, decamethylcyclopentasiloxane, or dodecamethylcyclohexasiloxane.
12. The etching composition of claim 7 , wherein the silicon compound is included in a range of 0.01 wt % to 5 wt % with respect to a total weight of the etching composition.
13. An etching composition comprising: 15 wt % to 75 wt % of a peracetic acid mixture, based on a total weight of the etching composition; 0.01 wt % to 5 wt % of a fluorine compound, based on the total weight of the etching composition; 15 wt % to 65 wt % of an organic solvent, based on the total weight of the etching composition; at least one silicon compound, wherein the at least one silicon compound includes one of alkoxy silane compound, silanol compound, oxime silane compound, disilazane compound, or disiloxane compound, and the silicon compound is included in a range of 0.01 wt % to 5 wt % with respect to the total weight of the etching composition; and water, wherein a sum of respective amounts of the peracetic acid mixture, the fluorine compound, and the organic solvent are less than the total weight of the etching composition.
14. The etching composition of claim 13 , wherein the peracetic acid mixture includes acetic acid, hydrogen peroxide, and peracetic acid.
15. The etching composition of claim 14 , wherein
the peracetic acid mixture includes an acetic acid solution and a hydrogen peroxide solution mixed together with a volume ratio of 33:10 to 33:33, and
the acetic acid solution is acetic acid aqueous solution of 100 percent concentration, and the hydrogen peroxide solution is hydrogen peroxide aqueous solution of 31 percent concentration.
16. The etching composition of claim 13 , wherein the organic solvent includes at least one of methanol, ethanol, isopropanol, acetate, proionic acid, lactic acid, methylacetate, ethylacetate, sodium acetate, isopropyl acetate, n-propyl acetate, butyl acetate, n-butyl acetate, isobutyl acetate, vinyl acetate, pentyl acetate, octyl acetate, amyl acetate, or 2-ethoxyethyl acetate.
17. The etching composition of claim 13 , wherein the fluorine compound includes at least one of HF, NaF, KF, AlF 2 , LiF 4 , CaF 3 , NaHF 6 , NH 4 F, NH 4 HF 2 , (CH 3 ) 4 NF, KHF 2 , HBF 4 , NH 4 BF 4 , KBF 4 , or H 2 SiF 6 .