Semiconductor device and method of fabricating the same
A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes an interlayer insulating film on a substrate, the interlayer insulating film including an opening, a barrier conductive film extending along a sidewall of the opening and a bottom surface exposed by the opening, a first film disposed on the barrier conductive film and in the opening, and the first film including cobalt, and a conductive liner on the barrier conductive film, the conductive liner extending along a portion of a side all of the opening and including a metal other than cobalt.
1. A semiconductor device comprising:
an interlayer insulating film on a substrate, the interlayer insulating film comprising an opening;
a barrier conductive film extending along a sidewall of the opening and a bottom surface exposed by the opening;
a first film disposed on the barrier conductive film and in the opening, the first film comprising cobalt; and
a conductive liner on the barrier conductive film, the conductive liner extending along a portion of a sidewall of the opening and comprising a first metal other than cobalt,
wherein the first film comprises a first portion filling a lower portion of the opening and a second portion filling an upper portion of the opening, and
wherein the first portion of the first film is directly adjacent to the second portion of the first film which is disposed between two portions of the conductive liner.
2. The semiconductor device of claim 1 , wherein a portion of the first film is interposed between the conductive liner and the barrier conductive film on the sidewall of the opening.
3. The semiconductor device of claim 2 , wherein the conductive liner comprises a metal alloy comprising cobalt and the first metal.
4. The semiconductor device of claim 2 , wherein the first metal comprises one of cadmium (Cd), chromium (Cr), iron (Fe), and zinc (Zn).
5. The semiconductor device of claim 2 , wherein an upper surface of the conductive liner is exposed by the first film.
6. The semiconductor device of claim 2 , wherein a thickness of the first film interposed between the conductive liner and the barrier conductive film on the sidewall of the opening is less than a height from the barrier conductive film on the bottom surface exposed by the opening to a lower surface of the conductive liner,
wherein the thickness of the first film interposed between the conductive liner and the barrier conductive film is a horizontal distance between the conductive liner and the barrier conductive film, and the height is a vertical distance between the barrier conductive film on the bottom surface exposed by the opening and a lower surface of the conductive liner.
7. The semiconductor device of claim 1 , wherein the conductive liner is disposed along a boundary between the first film and the barrier conductive film.
8. The semiconductor device of claim 7 , wherein the conductive liner extends along at least a portion of an upper surface of the first film.
9. The semiconductor device of claim 1 , further comprising a metal diffusion region within the first film, the metal diffusion region having the first metal diffused therein,
wherein the metal diffusion region is disposed on a periphery of the conductive liner.
10. The semiconductor device of claim 1 , wherein the opening forms a trench.
11. A semiconductor device, comprising:
an interlayer insulating film on a substrate, the interlayer insulating film comprising an opening, wherein the opening comprises a lower portion and an upper portion;
a filling film comprising a first portion filling the lower portion of the opening and a second portion filling the upper portion of the opening, wherein the filling film comprises cobalt; and
a metal separating region within the filling film, the metal separating region comprising a first metal other than cobalt,
wherein the metal separating region is disposed in the second portion of the filling film and is not disposed in the first portion of the filling film, and
wherein the first portion of the filling film is directly adjacent to the second portion of the filling film which is disposed between two portions of the metal separating region.
12. The semiconductor device of claim 11 , wherein the metal separating region extends along a sidewall of the opening, and comprises a conductive liner formed of the first metal, and
the first metal is an element having a lower standard reduction potential than cobalt.
13. The semiconductor device of claim 12 , wherein the first metal comprises one of cadmium (Cd), chromium (Cr), iron (Fe), and zinc (Zn).
14. The semiconductor device of claim 11 , wherein the metal separating region comprises a conductive liner extending along a sidewall of the opening, and
the conductive liner comprises a metal alloy comprising cobalt and the first metal.
15. The semiconductor device of claim 14 , wherein the metal separating region further comprises a metal diffusion region formed on a periphery of the conductive liner, and
the metal diffusion region is a region in which the first metal is diffused into the filling film.
16. The semiconductor device of claim 11 , wherein the metal separating region comprises a metal diffusion region in which the first metal is diffused into the filling film.
17. The semiconductor device of claim 11 , further comprising a barrier conductive film extending along a sidewall of the opening and a bottom surface exposed by the opening, wherein the filling film is formed on the barrier conductive film.
18. A semiconductor device, comprising:
an interlayer insulating film on a substrate, the interlayer insulating film comprising a first opening and a second opening having different widths from each other;
a first filling film filling the first opening and comprising a first metal, wherein the first metal is cobalt;
a second filling film filling the second opening and comprising the first metal;
a first conductive liner within the first filling film, the first conductive liner comprising a second metal different from the first metal; and
a second conductive liner within the second filling film, the second conductive liner comprising the second metal,
wherein a vertical distance from an upper surface of the interlayer insulating film to a lower surface of the first conductive liner is different from a vertical distance from an upper surface of the interlayer insulating film to a lower surface of the second conductive liner.
19. The semiconductor device of claim 18 , wherein a width of the first opening is greater than a width of the second opening, and
a vertical distance from the upper surface of the interlayer insulating film to the lower surface of the first conductive liner is greater than a vertical distance from the upper surface of the interlayer insulating film to the lower surface of the second conductive liner.
20. The semiconductor device of claim 19 , wherein the first conductive liner extends along a portion of a sidewall of the first opening.
21. The semiconductor device of claim 18 , wherein an upper surface of the first conductive liner is exposed by the first filling film, and an upper surface of the second conductive liner is exposed by the second filling film.