Selective deposition on metal or metallic surfaces relative to dielectric surfaces
Methods are provided for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second, dielectric surface of the substrate, or for selectively depositing metal oxides on a first metal oxide surface of a substrate relative to a second silicon oxide surface. The selectively deposited material can be, for example, a metal, metal oxide, metal nitride, metal silicide, metal carbide and/or dielectric material. In some embodiments a substrate comprising a first metal or metallic surface and a second dielectric surface is alternately and sequentially contacted with a first vapor-phase metal halide reactant and a second reactant. In some embodiments a substrate comprising a first metal oxide surface and a second silicon oxide surface is alternately and sequentially contacted with a first vapor phase metal fluoride or chloride reactant and water.
1. A method for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second surface dielectric surface of the substrate, the method comprising one or more deposition cycles comprising:
contacting the substrate with a first vapor-phase precursor comprising a metal halide at a temperature equal to or above about 225° C., wherein the metal halide is selected from fluorides or chlorides of Nb, Ta, Mo, W, V, Cr;
contacting the substrate with a second vapor-phase precursor comprising water or H 2 O 2 ; and
optionally repeating the contacting steps until a desired thickness of material is deposited on the first metal or metallic surface;
wherein the material is deposited on the first metal or metallic surface relative to the second dielectric surface with a selectivity of above about 50%.
2. The method of claim 1 , wherein the first precursor is selected from NbCl 5 , NbF 5 , TaCl 5 , TaF 5 , MoF x , MoCl x , VF x , VCl x , and CrF x .
3. The method of claim 2 , wherein the first precursor is selected from NbCl 5 , NbF 5 , TaCl 5 , and TaF 5 .
4. The method of claim 1 , wherein the second dielectric surface comprises Si—O bonds.
5. The method of claim 1 , wherein the second dielectric surface comprises a non-conductive surface.
6. The method of claim 1 , wherein the metal halide does not comprise tungsten.
7. The method of claim 1 , wherein the material comprises a metal, metal oxide, metal silicide, metal carbide or metal nitride.
8. The method of claim 1 , further comprising contacting the substrate with a first vapor-phase precursor comprising a metal halide at a temperature equal to or above about 300° C.
9. The method of claim 1 , further comprising exposing the deposited material to a further reactant comprising oxygen.
10. The method of claim 1 , wherein there is no measurable deposition of material on the second dielectric surface of the substrate after 100 deposition cycles.
11. The method of claim 1 , wherein the material is deposited on the first metal or metallic surface relative to the second dielectric surface with a selectivity of above about 95%.
12. The method of claim 1 , wherein the substrate is contacted with the first vapor-phase precursor comprising a metal halide at a temperature equal to or above about 250° C. and the material is deposited on the first metal or metallic surface relative to the second dielectric surface with a selectivity of above about 95%.