IP Library › Granted Patent US 10,433,070
Granted Patent B2
US 10,433,070 · App. 15/910,390 · Granted Oct 1, 2019

Sensitivity compensation for capacitive MEMS device

Inventors: Alfons Dehe (Reutlingen, DE); Abidin Güçlü Onaran (Munich, DE)
Assignee: Infineon Technologies AG
H04R19/04B81B3/0056B81C1/00166H04R7/04H04R19/005B81B2201/0235B81B2201/0257B81B2201/0264B81B2203/0127B81B2203/0361B81B2203/04H04R2201/003
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Quick Facts
Patent No.
US 10,433,070
App. No.
15/910,390
Granted
Oct 1, 2019
Kind
B2
Abstract

A MEMS device includes a membrane and a counter electrode structure spaced apart from the membrane. The counter electrode structure includes a non-planar conductive layer. The MEMS device includes an air gap between the membrane and the counter electrode structure. The air gap has a non-uniform thickness.

Claims (31)

1. A MEMS device comprising:

a membrane;

a counter electrode structure spaced apart from the membrane, the counter electrode structure comprising a non-planar conductive layer, the counter electrode structure comprising a central region and a surrounding region, the central region comprising a first planar portion of the non-planar conductive layer, the surrounding region comprising a second planar portion of the non-planar conductive layer, the first planar portion of the non-planar conductive layer being parallel to the second planar portion of the non-planar conductive layer; and

an air gap between the membrane and the counter electrode structure, the air gap having a non-uniform thickness.

2. The MEMS device of claim 1 , wherein the non-uniform thickness decreases from a center of the MEMS device to an edge of the MEMS device.

3. The MEMS device of claim 1 , wherein the counter electrode structure has a plurality of holes.

4. The MEMS device of claim 1 , wherein the central region of the counter electrode structure and the surrounding region of the counter electrode structure are concentric regions.

5. The MEMS device of claim 1 , wherein a first thickness of a first portion of the air gap between the central region of the counter electrode structure and the membrane is greater than a second thickness of a second portion of the air gap between the surrounding region of the counter electrode structure and the membrane.

6. The MEMS device of claim 1 , wherein the MEMS device is a MEMS microphone.

7. The MEMS device of claim 1 , wherein a first width of the first planar portion of the non-planar conductive layer is greater than a second width of the second planar portion of the non-planar conductive layer.

8. A MEMS device comprising:

a first movable electrode structure;

a second movable electrode structure spaced apart from the first movable electrode structure, the first movable electrode structure and the second movable electrode structure enclosing a gap between the first movable electrode structure and the second movable electrode structure, the gap having a gas pressure lower than an ambient pressure;

a static electrode structure within the gap and interposed between the first movable electrode structure and the second movable electrode structure; and

a plurality of pillars extending through the gap and connecting the first movable electrode structure and the second movable electrode structure, the plurality of pillars extending through the static electrode structure, the plurality of pillars dividing the gap into a plurality of gap regions, different gap regions having different thicknesses, wherein the plurality of pillars have a non-uniform pitch.

9. The MEMS device of claim 1 wherein the non-uniform pitch increases from a center of the MEMS device to an edge of the MEMS device.

10. The MEMS device of claim 8 , wherein a first gap region is closer to a center of the MEMS device than a second gap region, and wherein a first thickness of the first gap region is greater than a second thickness of the second gap region.

11. The MEMS device of claim 8 , wherein a first gap region is closer to a center of the MEMS device than a second gap region, and wherein a first thickens of the first movable electrode structure adjacent the first gap region is greater than a second thickens of the first movable electrode structure adjacent the second gap region.

12. The MEMS device of claim 11 , wherein a third thickens of the second movable electrode structure adjacent the first gap region is greater than a fourth thickens of the second movable electrode structure adjacent the second gap region.

13. The MEMS device of claim 8 , wherein the first movable electrode structure has a non-uniform thickness.

14. The MEMS device of claim 8 , wherein the second movable electrode structure has a non-uniform thickness.

15. A MEMS device comprising:

a first membrane;

a second membrane spaced apart from the first membrane, the first membrane and the second membrane sealing a gap between the first membrane and the second membrane, the gap having a gas pressure lower than an ambient pressure;

a counter electrode structure within the gap and between the first membrane and the second membrane, a first thickness of the gap adjacent a center of the counter electrode structure being greater than a second thickness of the gap adjacent an edge of the counter electrode structure; and

a plurality of pillars within the gap and connecting the first membrane and the second membrane, the plurality of pillars extending through the counter electrode structure, wherein the plurality of pillars divide the gap into a plurality of gap regions, and wherein different gap regions have different widths.

16. The MEMS device of claim 15 , wherein the counter electrode structure has a perforated structure.

17. The MEMS device of claim 15 , wherein the plurality of pillars extend through holes in the counter electrode structure.

18. The MEMS device of claim 15 , wherein the first membrane has a non-uniform thickness.

19. The MEMS device of claim 15 , wherein the second membrane has a non-uniform thickness.

20. The MEMS device of claim 15 , wherein the plurality of pillars have a non-uniform pitch.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 2, 2018
From: DEHE, ALFONS; ONARAN, ABIDIN GÜÇLÜ
To: INFINEON TECHNOLOGIES AG
Reel/Frame 045090/0185 →
Continuity (1)
Related Publication 20190273993A1 · Sep 5, 2019
Cited By (4)
US 12,240,748 US 12,356,167 US 12,552,659 US 12,595,166