Conformal low temperature hermetic dielectric diffusion barriers
Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.
1. An integrated circuit structure, comprising:
a metal interconnect structure in a first low-k inter-layer dielectric (ILD) layer above a substrate;
a hardmask layer on the metal interconnect structure;
a moderate-k dielectric layer on the hardmask layer, the moderate-k dielectric layer having a dielectric constant greater than a dielectric constant of the hardmask layer;
a metal oxide layer on the moderate-k dielectric layer, the metal oxide layer having a dielectric constant greater than the dielectric constant of the moderate-k dielectric layer;
a second low-k ILD layer on the metal oxide layer; and
a conductive via in the second low-k ILD layer and through an opening in the metal oxide layer and the hardmask layer, the conductive via on and electrically coupled to the metal interconnect structure.
2. The integrated circuit structure of claim 1 , wherein the metal oxide layer has a thickness less than a thickness of the hardmask layer.
3. The integrated circuit structure of claim 1 , wherein the hardmask layer comprises silicon, oxygen and nitrogen.
4. The integrated circuit structure of claim 1 , wherein the first low-k ILD layer has a dielectric constant in the range of 2.5-3.2, and wherein the second low-k ILD layer has a dielectric constant in the range of 2.5-3.1.
5. The integrated circuit structure of claim 1 , wherein the metal oxide layer is selected from the group consisting of: Al 2 O 3 , MgO 2 , HfO 2 , TiO 2 , TaO 2 and ZrO 2 .
6. The integrated circuit structure of claim 1 , wherein the metal interconnect structure comprises a barrier layer and a fill metal.
7. The integrated circuit structure of claim 1 , further comprising:
an air gap in the first low-k ILD layer, the air gap laterally adjacent to the metal interconnect structure.
8. An integrated circuit structure, comprising:
a metal interconnect structure in a first low-k inter-layer dielectric (ILD) layer above a substrate;
a hardmask layer on the metal interconnect structure;
a moderate-k dielectric layer on the hardmask layer, the moderate-k dielectric layer having a dielectric constant greater than a dielectric constant of the hardmask layer;
a high-k dielectric layer on the moderate-k dielectric layer, the high-k dielectric layer comprising a metal, the high-k dielectric layer having a dielectric constant greater than the dielectric constant of the moderate-k dielectric layer;
a second low-k ILD layer on the high-k dielectric layer;
a conductive via in the second low-k ILD layer and through an opening in the high-k dielectric layer and the hardmask layer, the conductive via on and electrically coupled to the metal interconnect structure; and
an air gap in the first low-k ILD layer, the air gap laterally adjacent to the metal interconnect structure.
9. The integrated circuit structure of claim 8 , wherein the high-k dielectric layer has a thickness less than a thickness of the hardmask layer.
10. The integrated circuit structure of claim 8 , wherein the hardmask layer comprises silicon, oxygen and nitrogen.
11. The integrated circuit structure of claim 8 , wherein the first low-k ILD layer has a dielectric constant in the range of 2.5-3.2, and wherein the second low-k ILD layer has a dielectric constant in the range of 2.5-3.1.
12. The integrated circuit structure of claim 8 , wherein the high-k dielectric layer is selected from the group consisting of: Al 2 O 3 , MgO 2 , HfO 2 , TiO 2 , TaO 2 and ZrO 2 .
13. The integrated circuit structure of claim 8 , wherein the metal interconnect structure comprises a barrier layer and a fill metal.
14. A computing device, comprising:
a board; and
a component coupled to the board, the component including an integrated circuit structure, comprising:
a metal interconnect structure in a first low-k inter-layer dielectric (ILD) layer above a substrate;
a hardmask layer on the metal interconnect structure;
a moderate-k dielectric layer on the hardmask layer, the moderate-k dielectric layer having a dielectric constant greater than a dielectric constant of the hardmask layer;
a metal oxide layer on the moderate-k dielectric layer, the metal oxide layer having a dielectric constant greater than the dielectric constant of the moderate-k dielectric layer;
a second low-k ILD layer on the metal oxide layer; and
a conductive via in the second low-k ILD layer and through an opening in the metal oxide layer and the hardmask layer, the conductive via on and electrically coupled to the metal interconnect structure.
15. The computing device of claim 14 , further comprising:
a memory coupled to the board.
16. The computing device of claim 14 , further comprising:
a communication chip coupled to the board.
17. The computing device of claim 14 , further comprising:
a camera coupled to the board.
18. The computing device of claim 14 , further comprising:
a battery coupled to the board.
19. The computing device of claim 14 , further comprising:
an antenna coupled to the board.
20. The computing device of claim 14 , wherein the component is a packaged integrated circuit die.