Semiconductor device and electrical apparatus
According to an embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, second semiconductor regions of a second conductivity type, a third semiconductor region of the second conductivity type, a fourth semiconductor region of the first conductivity type, a fifth semiconductor region of the second conductivity type, a gate electrode, and a second electrode. The first semiconductor region is provided on the first electrode. The first semiconductor region includes first portions and first protruding portions. The first portions are arranged along a first direction and a second direction perpendicular to the first direction. The first protruding portions respectively protrude from the first portions. The second semiconductor regions are spaced from each other and provided in the first semiconductor region. The third semiconductor region is provided on the first semiconductor region and the second semiconductor regions.
1. A semiconductor device comprising:
a first electrode;
a first semiconductor region of a first conductivity type provided on the first electrode, the first semiconductor region including a plurality of first portions, the first portions being arranged along a first direction and a second direction perpendicular to the first direction;
a plurality of second semiconductor regions of a second conductivity type provided in the first semiconductor region other than the first portions and spaced from each other, part of the second semiconductor regions being provided around one of the first portions, and length of one of the second semiconductor regions in a direction from the part of the second semiconductor regions to the one of the first portions being longer than length of the one of the second semiconductor regions in a direction perpendicular to the direction;
a third semiconductor region of the second conductivity type provided on the first semiconductor region and the second semiconductor regions;
a fourth semiconductor re ion of the first conductivity type provided on the third semiconductor region;
a fifth semiconductor or region of the second conductivity type selectively provided on the fourth semiconductor region;
a gate electrode opposed to the fourth semiconductor region with a gate insulating layer interposed; and
a second electrode provided on the fifth semiconductor region, wherein the part of the plurality of second semiconductor regions are radially arranged.
2. The device according to claim 1 , wherein the plurality of second semiconductor regions in corners of a predetermined partition region including the first portion are radially arranged with a predetermined directivity.
3. A semiconductor device comprising:
a first electrode;
a first semiconductor region of a first conductivity type provided on the first electrode, the first semiconductor region including a first portion, wherein an outer edge of the first portion has a polygonal shape having a larger number of corners than a tetragon;
a plurality of second semiconductor regions of a second conductivity type spaced from each other, the second semiconductor regions being provided in the first semiconductor region other than the first portion;
a third semiconductor region of the second conductivity type provided on the first semiconductor region and the second semiconductor regions;
a fourth semiconductor region of the first conductivity type provided on the third semiconductor region;
a fifth semiconductor region of the second conductivity type selectively provided on the fourth semiconductor region;
a gate electrode opposed to the fourth semiconductor region with a gate insulating layer interposed; and
a second electrode provided on the fifth semiconductor region.
4. A semiconductor device comprising:
a first electrode;
a first semiconductor region of a first conductivity type provided on the first electrode, the first semiconductor region including a first portion;
a plurality of second semiconductor regions of a second conductivity type provided in the first semiconductor region other than the first portion and spaced from each other, part of the plurality of second semiconductor regions being provided around the first portion, and length of one the part of the plurality of second semiconductor regions in a direction from the one of the part of the plurality of second semiconductor regions to the first portions being longer than length of the one of the part of the plurality of second semiconductor region in a direction perpendicular to the direction, wherein the part of the plurality of second semiconductor regions are radially arranged, and wherein the plurality of second semiconductor regions in corners of a predetermined partition region including the first portion are radially arranged with a predetermined directivity;
a third semiconductor region of the second conductivity type provided on the first semiconductor region and the second semiconductor regions;
a fourth semiconductor region of the first conductivity type provided on the third semiconductor region;
a fifth semiconductor region of the second conductivity type selectively provided on the fourth semiconductor region;
a gate electrode opposed to the fourth semiconductor region with a gate insulating layer interposed; and
a second electrode provided on the fifth semiconductor region.
5. An electrical apparatus comprising:
a plurality of the semiconductor devices according to claim 1 ; and
a bridge circuit constituted by the semiconductor devices.
6. An electrical apparatus comprising:
a plurality of the semiconductor devices according to claim 2 ; and
a bridge circuit constituted by the semiconductor devices.
7. An electrical apparatus comprising:
a plurality of the semiconductor devices according to claim 3 ; and
a bridge circuit constituted by the semiconductor devices.
8. An electrical apparatus comprising:
a plurality of the semiconductor devices according to claim 4 ; and
a bridge circuit constituted by the semiconductor devices.