Crystal oscillator and the use thereof in semiconductor fabrication
Systems and methods are provided for implementing a crystal oscillator to monitor and control semiconductor fabrication processes. More specifically, a method is provided for that includes performing at least one semiconductor fabrication process on a material of an integrated circuit (IC) disposed within a processing chamber. The method further includes monitoring by at least one electronic oscillator disposed within the processing chamber for the presence or absence of a predetermined substance generated by the at least one semiconductor fabrication process. The method further includes controlling the at least one semiconductor fabrication process based on the presence or absence of the predetermined substance detected by the at least one electronic oscillator.
1. A method comprising:
performing at least one semiconductor fabrication process on a material of an integrated circuit (IC) disposed within a processing chamber;
monitoring by at least one electronic oscillator disposed within the processing chamber for the presence or absence of a predetermined substance generated by the at least one semiconductor fabrication process; and
controlling the at least one semiconductor fabrication process based on the presence or absence of the predetermined substance detected by the at least one electronic oscillator, wherein the predetermined substance is a contaminant in a degassing process and the monitoring of the presence or absence of the contaminant is determined when a thickness of the contaminant deposited on a crystal of the at least one electronic oscillator is within a predetermined value.
2. The method of claim 1 , further comprising positioning the material of the IC in the processing chamber adjacent to the at least one electronic oscillator prior to performing the at least one semiconductor fabrication process.
3. The method of claim 2 , wherein the material of the IC is positioned within 1-10 mm of the at least one electronic oscillator.
4. The method of claim 2 , wherein the monitoring for the presence or absence of the predetermined substance comprises:
generating an electrical signal using the at least one electronic oscillator;
monitoring for a change in frequency of the electrical signal; and
determining the presence of the predetermined substance is a change in mass of the crystal of the at least one electronic oscillator, which results in a change in the frequency of the electrical signal.
5. The method of claim 4 , wherein the monitoring for the presence or absence of the predetermined substance further comprises determining the absence of the predetermined substance when there is no change in the frequency of the electrical signal.
6. The method of claim 5 , wherein the monitoring for the presence or absence of the predetermined substance further comprises independently controlling a temperature of the at least one electronic oscillator such that a signal margin of the electrical signal is enhanced.
7. The method of claim 5 , wherein the at least one semiconductor fabrication process is a degassing process and the predetermined substance is a contaminant from a photoresist layer.
8. The method of claim 7 , wherein the controlling the at least one semiconductor fabrication process comprises:
when there is no change in the frequency of the electrical signal, continuing the degassing process; and
when there is the change in the frequency of the electrical signal, stopping the degassing process.
9. The method of claim 1 , wherein the predetermined value is between 10-40 Å.
10. A method of detecting a photoresist in a processing chamber, comprising:
positioning at least one electronic oscillator adjacent to a material of an integrated circuit (IC) comprising the photoresist within the processing chamber;
performing a degassing process on the material of the IC within the processing chamber;
monitoring with the at least one electronic oscillator for a presence or absence of a polymeric material generated from the degassing process on the photoresist; and
stopping the degassing process when the presence of the polymeric material is detected based on a change in frequency of an electrical signal of the at least one electronic oscillator, wherein:
the polymeric material is a contaminant in the material, which contaminant is released into the processing chamber during the degassing process, and
the presence or absence of the contaminant is determined when a thickness of the contaminant deposited on a crystal of the at least one electronic oscillator during the degassing process is a value between 10-40 Å.
11. The method of claim 10 , wherein the material of the IC is positioned within 1-10 mm of the at least one electronic oscillator.
12. The method of claim 10 , wherein the monitoring for the presence or absence of the polymeric material comprises determining the presence of the polymeric material when there is a change in mass of a crystal of the at least one electronic oscillator, which results in the change in the frequency of the electrical signal.
13. The method of claim 12 , wherein the monitoring for the presence or absence of the polymeric material further comprises determining the absence of the polymeric material, when there is no change in the frequency of the electrical signal.
14. The method of claim 13 , wherein the monitoring for the presence or absence of the polymeric material further comprises independently controlling a temperature of the at least one electronic oscillator such that a signal margin of the electrical signal is enhanced.
15. The method of claim 13 , further comprising continuing the degassing process when there is no change in the frequency of the electrical signal detected.
16. The method of claim 10 , wherein the contaminant is a volatile contaminant.
17. The method of claim 16 , wherein the photoresist is comprised of at least one of poly methyl methacrylate and poly methyl glutarimide.