Methods, apparatus and system for forming sigma shaped source/drain lattice

1. A method, comprising:

forming a fin on a semiconductor substrate;

forming, over said fin, a gate region;

forming, in a source region and a drain region adjacent bottom portions of said fin, a first recess cavity in said source region and a second recess cavity in said drain region, said first and second recess cavities comprising sidewalls formed in an angle relative to a vertical axis, wherein portions of said first and second recess cavities extend below said fin;

forming, in said first recess cavity, a first rare earth oxide (REO) layer and in said second recess cavity, a second REO layer;

forming a first epitaxial (EPI) feature on said first REO layer such that a bottom of said first EPI feature is in contact with a top of said first REO layer; and

forming a second EPI feature on said second REO layer such that a bottom of said second EPI feature is in contact with a top of said second REO layer.

2. The method of claim 1 , further comprising:

removing a portion of a substrate material in said source region for forming said first recess cavity; and

removing a portion of a substrate material in said drain region for forming said second recess cavity.

3. The method of claim 2 , wherein:

forming said first EPI feature comprises growing said an EPI structure from at least one of the surface of said first rare earth oxide layer, and a portion of the fin adjacent said source region; and

forming said second EPI feature comprises growing said an EPI structure from at least one of the surface of said second rare earth oxide layer, and a portion of the fin adjacent said drain region.

4. The method of claim 2 , wherein forming said first and second rare earth oxide layers comprises forming said first and second rare earth oxide layers to a height sufficient to substantially prevent current leakage flow from said first and second EPI features to said semiconductor substrate.

5. The method of claim 1 , wherein forming said first and second recess cavities comprises forming a sigma shaped cavity, wherein said sigma shaped cavity extends below said fin.

6. The method of claim 5 , wherein forming said sigma shaped cavity comprises performing a tetramethylammonium hydroxide (TMAH) etch process based on crystal Si-(111) material.

7. The method of claim 5 , wherein forming said first and second rare earth oxide layers comprises depositing a rare earth oxide material into said sigma shaped cavity.

8. The method of claim 1 , wherein forming said first and second rare earth oxide layers comprises reducing a substrate material area between said fin and said semiconductor substrate by replacing said substrate material area with a rare earth oxide material for reducing at least one of leakage current flow between said drain region and said source region below said fin, or leakage current flow between said source/drain regions and said semiconductor substrate.

9. The method of claim 1 , wherein forming said first and second rare earth oxide layers comprises:

forming a spacer about said gate region;

forming a sigma shaped recess for forming said first and second recess cavities;

depositing a rare earth oxide material into said sigma shaped cavity; and

removing said spacer after forming said first and second rare earth oxide layers.

10. A method, comprising:

forming, on a semiconductor substrate, a fin adjacent a source region and a drain region;

forming a gate region over said fin;

forming a sigma shaped cavity comprising a first recess cavity in said source region and a second recess cavity in said drain region;

depositing a rare earth oxide (REO) material into said sigma shaped cavity forming a first REO layer in said first recess cavity and a second REO layer in said second recess cavity;

forming a first epitaxial (EPI) feature above said first REO layer such that a bottom of said first EPI feature is in contact with a top of said first REO layer; and

forming a second EPI feature above said second REO layer such that a bottom of said second EPI feature is in contact with a top of said second REO layer.

11. The method of claim 10 , wherein forming said sigma shaped cavity comprising forming said sigma shaped cavity such that said first and second recess cavities extend below said fin.

12. The method of claim 10 , wherein forming said sigma shaped cavity comprising performing a tetramethylammonium hydroxide (TMAH) etch process to form sidewalls formed in an angle relative to a vertical axis in said first and second recess cavities.

13. The method of claim 10 , wherein forming said first and second REO layers comprises reducing a substrate material area between said fin and said semiconductor substrate for reducing a leakage current flow between said drain region and said source region below said fin.

14. The method of claim 10 , wherein

forming said first EPI feature comprises growing said an EPI structure from at least one of the surface of said first REO layer, and a portion of the fin adjacent said source region; and

forming said second EPI feature comprises growing said an EPI structure from at least one of the surface of said second REO layer, and a portion of the fin adjacent said drain region.

15. The method of claim 10 , wherein forming said first and second REO oxide layers comprises depositing at least one of gadolinium oxide, erbium oxide, lanthanum oxide, gadolinium-doped aluminum-zinc oxide (Gd-AZO) into said sigma shaped cavity.