Plasma processing apparatus and plasma processing method
In order to provide a plasma processing apparatus or method with improved processing uniformity, a plasma processing apparatus includes: a processing chamber which is disposed inside a vacuum container; a sample stage which is disposed inside the processing chamber and has a top surface for placing a wafer corresponding to a processing target thereon; an electric field forming part which forms an electric field supplied into the processing chamber; a coil which forms a magnetic field for forming plasma inside the processing chamber by an interaction with the electric field; and a controller which increases or decreases intensity of the plasma inside the processing chamber by repeatedly increasing or decreasing intensity of the magnetic field formed by the coil at a predetermined interval, wherein the wafer is processed while the plasma is repeatedly formed and diffused.
1. A plasma processing apparatus comprising:
a processing chamber which is disposed inside a vacuum container;
a sample stage which is disposed inside the processing chamber and has a top surface for placing a wafer to be processed thereon;
an electric field generating part which generates an electric field supplied into the processing chamber;
a coil which generates a magnetic field for generating plasma inside the processing chamber by an interaction with the electric field; and
a controller which increases or decreases an intensity of the plasma inside the processing chamber by repeatedly causing the intensity of the magnetic field generated by the coil to be at a first value and a second value lower than the first value in respective predetermined intervals,
wherein the wafer is processed while the plasma is repeatedly generated and diffused.
2. The plasma processing apparatus according to claim 1 ,
wherein the controller increases or decreases the magnetic field of the coil by using a result of an amount representing the intensity of the plasma or a change in intensity thereof while the wafer is processed.
3. The plasma processing apparatus according to claim 1 ,
wherein the controller decreases the intensity of the magnetic field of the coil after the plasma is generated and a change in intensity of the plasma falls within a predetermined range.
4. The plasma processing apparatus according to claim 3 ,
wherein the controller increases or decreases the magnetic field of the coil by using a result of an amount representing the intensity of the plasma or a change in intensity thereof while the wafer is processed.
5. The plasma processing apparatus according to claim 1 ,
wherein the controller increases the magnetic field of the coil after an amount representing the intensity of the plasma becomes smaller than a predetermined lower limit value.
6. The plasma processing apparatus according to claim 5 ,
wherein the controller decreases the magnetic field to remove the plasma and increases the magnetic field to generate the plasma again.
7. A plasma processing method comprising:
placing a wafer to be processed on a top surface of a sample stage inside a processing chamber of a vacuum container,
supplying an electric field and a magnetic field interacting with the electric field into the processing chamber to generate plasma inside the processing chamber; and
processing the wafer,
wherein an intensity of the magnetic field generated by the coil is repeatedly made to be at a first value and a second value lower than the first value in respective predetermined periods and the plasma is repeatedly generated and diffused to process the wafer.
8. The plasma processing method according to claim 7 ,
wherein the magnetic field of the coil is increased or decreased by using a result of an amount representing the intensity of the plasma or a change in intensity thereof while the wafer is processed.
9. The plasma processing method according to claim 7 ,
wherein the intensity of the magnetic field of the coil is decreased after the plasma is generated and a change in intensity of the plasma falls within a predetermined range.
10. The plasma processing method according to claim 9 ,
wherein the magnetic field of the coil is increased or decreased by using a result of an amount representing the intensity of the plasma or a change in intensity thereof while the wafer is processed.
11. The plasma processing method according to claim 7 ,
wherein the magnetic field of the coil is increased after an amount representing the intensity of the plasma becomes smaller than a predetermined lower limit value.
12. The plasma processing method according to claim 11 ,
wherein the magnetic field is decreased to remove the plasma and is increased to generate the plasma again.