Robust and error free physical unclonable function using twin-cell charge trap transistor memory
The present disclosure relates to a structure which includes a pair of non-volatile storage devices in a memory array which are sensed to determine an initial data state and reinforced by a write operation of the initial data state to the pair of non-volatile storage devices. The structure can be used for a robust and error free physical unclonable function.
1. A structure comprising:
a pair of non-volatile storage devices in a memory array which are sensed to determine an initial data state and reinforced by a write operation of the initial data state to the pair of non-volatile storage devices;
a current sense amplifier which is connected to the pair of non-volatile storage devices through a true bit line (BLT) and a complement bit line (BLC) and which senses the initial data state of the pair of non-volatile storage devices;
a write margin circuit which is connected to the current sense amplifier through a true digit line, a complement digit line, and a MID line,
wherein the write margin circuit includes a plurality of PMOS transistors which are configured to add a margin to a difference in a threshold voltage between the pair of non-volatile storage devices.
2. The structure of claim 1 , wherein the pair of non-volatile storage devices comprises a pair of field effect transistors (FETs).
3. The structure of claim 2 , wherein the pair of FETs comprises a first NMOS transistor and a second NMOS transistor.
4. The structure of claim 3 , wherein the initial data state comprises the difference in the threshold voltage between the first NMOS transistor and the second NMOS transistor.
5. The structure of claim 4 , wherein the initial data state is determined by comparing a current from drain to source between the first NMOS transistor and the second NMOS transistor.
6. The structure of claim 3 , wherein the write operation includes trapping charge in a gate dielectric of one of the first NMOS transistor and the second NMOS transistor.
7. The structure of claim 2 , wherein the pair of FETs comprises a first PMOS transistor and a second PMOS transistor.
8. A circuit, comprising:
a twin-cell charge trap transistor (CTT) non-volatile memory (NVM) array;
a read and write control and data compare component which is configured to read an initial data state of a memory address of the twin-cell CTT NVM array and write the initial data state to the memory address of the twin-cell CTT NVM array;
a current sense amplifier which is connected to the twin-cell CTT NVM array through a true bit line (BLT) and a complement bit line (BLC) and which senses the initial data state of the memory address of the twin-cell CTT NVM array; and
a write margin circuit which is connected to the current sense amplifier through a true digit line, a complement digit line, and a MID line,
wherein the write margin circuit includes a plurality of PMOS transistors which add a margin to a difference in a threshold voltage between the twin-cell CTT NVM array.
9. The circuit of claim 8 , wherein the memory address comprises a pair of field effect transistors (FETs).
10. The circuit of claim 9 , wherein the pair of FETs comprises a first NMOS transistor and a second NMOS transistor.
11. The circuit of claim 10 , wherein the initial data state comprises the difference in the threshold voltage between the first NMOS transistor and the second NMOS transistor.
12. The circuit of claim 11 , wherein the initial data state is read by comparing a current from drain to source between the first NMOS transistor and the second NMOS transistor.
13. The circuit of claim 10 , wherein the writing the initial data includes trapping charge in a gate dielectric of one of the first NMOS transistor and the second NMOS transistor.
14. A method, comprising:
reading an initial data state from a memory address of a non-volatile memory;
writing the read initial data state to the memory address of the non-volatile memory;
performing a check to determine whether the read initial data state was written correctly in the memory address of the non-volatile memory; and
adding a margin to a difference in a threshold voltage between a plurality of devices in the non-volatile memory.
15. The method of claim 14 , further comprising triggering and outputting a programming failure in response to determining that the read initial data state was not written correctly in the memory address of the non-volatile memory.
16. The method of claim 14 , further comprising:
determining whether the memory address is a last memory address of the non-volatile memory in response to determining that the read initial data state was written correctly in the memory address of the non-volatile memory; and
incrementing to a next memory address in response to determining that the memory address is not the last memory address of the non-volatile memory.