Method of fabricating semiconductor device

1. A method of fabricating a semiconductor device, comprising:

providing a substrate; and

forming a thin film on the substrate by a process comprising:

feeding a suppression gas onto the substrate;

feeding a source gas;

feeding a reactive gas; and

feeding a purge gas comprising an inert gas,

wherein the suppression gas suppresses a physical adsorption of the source gas by the substrate,

the source gas comprises a titanium-based compound,

the reactive gas comprises a nitride-based compound,

the suppression gas comprises at least one of an alkyl halide, an alkenyl halide, an alkynyl halide, an alkene and an alkyne,

each of the alkyl halide, the alkenyl halide, the alkynyl halide, the alkene and the alkyne comprises 1 to 10 carbon atoms, and

each of the alkyl halide, the alkenyl halide, and the alkynyl halide further comprises 1 to 10 halogen atoms.

2. The method of claim 1 , wherein the suppression gas does not comprise oxygen and does not comprise nitrogen.

3. The method of claim 1 , wherein the feeding the suppression gas comprises feeding the suppression gas before or after the feeding of the source gas.

4. The method of claim 1 , wherein the feeding the suppression gas, comprises feeding the suppression gas after the feeding of the reactive gas.

5. The method of claim 1 , wherein

the purge gas comprises a first gas, a second gas and a third gas, and

the feeding of the purge gas, comprises feeding of the first gas after the feeding the suppression gas, feeding of the second gas after the feeding the source gas, and feeding of the third gas after the feeding the reactive gas.

6. The method of claim 1 , wherein the suppression gas is fed together with the source gas.

7. The method of claim 1 , wherein the suppression gas is fed together with the reactive gas.

8. A method of manufacturing a semiconductor device, the method comprising:

supporting an intermediate structure of a semiconductor device in a process chamber, the intermediate structure having an upper surface and an opening therein extending from the upper surface so as to have an aspect ratio, wherein the intermediate structure includes an internal bottom surface delimiting a bottom of the opening and an internal side surface delimiting a side of the opening; and

a film forming process of conformally forming a film of substantially uniform thickness on the intermediate structure including on the top surface and on the internal bottom surface of the structure,

the film forming process comprising:

feeding, into the process chamber, a source gas that is a precursor of the film and at least some of which is adsorbed by the structure at the top surface and internal bottom surface of the intermediate structure,

feeding, into the process chamber, a reactive gas that is a precursor of the film and reacts chemically with the source gas, and

feeding, into the process chamber, a suppression gas which is not a precursor of the film, which is not reactive with the source gas, and at least some of which is adsorbed by the top and internal bottom surface of the intermediate structure, and

feeding, into the process chamber, inert gas to purge the chamber of at least some of the gas that is in the process chamber, wherein the feeding of inert gas is carried out at one or more points in the film forming process after the source gas has been fed into the process chamber,

wherein the source gas comprises a titanium-based compound,

the reactive gas comprises a nitride-based compound,

the suppression gas comprises at least one of an alkyl halide, an alkenyl halide, an alkynyl halide, an alkene and an alkyne,

each of the alkyl halide, the alkenyl halide, the alkynyl halide, the alkene and the alkyne comprises 1 to 10 carbon atoms, and

each of the alkyl halide, the alkenyl halide, and the alkynyl halide further comprises 1 to 10 halogen atoms.

9. The method of claim 8 , wherein the film forming process comprises a cycle of feeding an amount of the suppression gas into the process chamber after the intermediate structure has been loaded into the process chamber and before any of the source gas, any of the reactive gas and any of the inert gas have been fed into the process chamber.

10. The method of claim 8 , wherein the film forming process comprises a cycle of feeding an amount of the source gas into the process chamber after the intermediate structure has been loaded into the process chamber and before any of the suppression gas, any of the reactive gas and any of the inert gas have been fed into the process chamber.

11. The method of claim 8 , wherein the film forming process comprises a cycle of feeding amounts of the source gas and the suppression gas into the process chamber after the intermediate structure has been loaded into the process chamber and before any of the reactive gas has been fed into the process chamber.

12. The method of claim 8 , wherein the film forming process conformally forms a film of an electrically conductive material comprising titanium (Ti) and nitrogen (N) on the intermediate structure, and

the feeding of a source gas into the process chamber comprises feeding a gas comprising titanium (Ti) into the process chamber, the feeding of a reactive gas into the process chamber comprises feeding a gas comprising nitrogen (N) into the process chamber, and the feeding of a suppression gas into the process chamber comprises feeding a gas comprising a halogen into the process chamber.

13. The method of claim 8 , wherein the film is a nitride and the suppression gas does not comprise oxygen.

14. The method of claim 8 , wherein the film is an oxynitride and the suppression gas does not comprise oxygen and does not comprise nitrogen.