Method for forming region-selective thin film using selectivating agent
Disclosed is a method of forming an area-selective thin film, the method comprising supplying the selectivity material to the inside of the chamber in which the substrate is placed, so that the selectivity material is adsorbed to a non-growth region of the substrate; purging the interior of the chamber; supplying a precursor to the inside of the chamber, so that the precursor is adsorbed to a growth region of the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber, so that the reaction material reacts with the adsorbed precursor to form the thin film.
1 . A method of forming an area-selective thin film, the method comprising:
preparing a substrate in a chamber, the substrate including a growth region and a non-growth region, wherein the growth region is a titanium nitride film or a niobium nitride film, and the non-growth region is a silicon nitride film;
supplying a selectivity material into the chamber in which the substrate is placed, wherein the selectivity material is trimethyl orthoformate and configured to be adsorbed to the non-growth region of the substrate;
purging the interior of the chamber;
supplying a niobium precursor into the chamber, wherein the niobium precursor is configured to be adsorbed to the growth region of the substrate;
purging the interior of the chamber; and
supplying a reaction material into the chamber to form the area-selective thin film, wherein the area-selective thin film is a niobium oxide film, and the niobium oxide film formed on the growth region of the substrate has a thickness that is greater than a thickness of the niobium oxide film formed on the non-growth region of the substrate, thereby improving a selectivity between the growth region and the non-growth region.
2 . The method of claim 1 , wherein the silicon nitride film is at least one selected from SiN, SiCN, C-doped SiN, and SiON.
3 . The method of claim 1 , wherein the reaction material is selected from O 3 , O 2 , H 2 O.
4 . The method of claim 1 , wherein the area-selective thin film is formed by a Metal Organic Chemical Vapor Deposition (MOCVD) or an atomic layer deposition (ALD).
5 . The method of claim 1 , wherein the niobium precursor is Tert-butylimido tris(diethylamido) niobium (TBTDEN).