Power management module and method of manufacture

1. A power management module formed on the surface of a semiconductor chip containing active circuit elements including one or more switching elements embedded within the semiconductor chip, comprising:

an inductor coil including one or more electrical conductors disposed around a ferromagnetic ceramic element formed on the semiconductor chip;

wherein the ferromagnetic ceramic element includes one or more metal oxides having atomic scale chemical uniformity resulting in fluctuations in metal-oxide compositional uniformity less than or equal to 1.50 mol % throughout said ceramic element, wherein 100% of all grains have a diameter that is less than or equal to 1.5× the mean grain diameter; and

one or more switching elements formed on or within the semiconductor chip and connected to the one or more electrical conductors to alter an effective number of windings of the inductor coil.

2. The module of claim 1 , wherein said module includes at least one other discrete component having a ceramic element formed on the surface of the semiconductor chip and also being in electrical communication with the active circuit elements.

3. The module of claim 1 , wherein the electrical conductor forms a coil around the ferromagnetic ceramic element and includes a plurality of selectable connections to the coil to enable selective variation coil inductance.

4. The module of claim 3 , wherein the switching elements are adapted to selectively connect to any of the one or more electrical conductors.

5. The module of claim 1 , wherein the inductor is a transformer having a plurality of electrical conductors disposed around the ferromagnetic ceramic element.

6. The module of claim 1 , wherein the electrical conductor forms a first coil around the ferromagnetic ceramic element, and further comprising a second coil formed around the ferromagnetic element and inductively coupled to the first coil.

7. The module of claim 6 , further comprising an amorphous insulator formed between the first and second coils.

8. The module of claim 1 , wherein said one or more metal oxides have a body-centered cubic crystalline phase, that includes iron oxide (Fe.sub.2O.sub.3) and amounts of one or more of: cobalt monoxide (CoO), nickel oxide (NiO), zinc oxide (ZnO), manganese oxide (MnO), copper oxide (CuO), vanadium oxide (VO), magnesium oxide (MgO) and lithium oxide (Li.sub.2O).

9. The module of claim 1 , wherein the electrical conductor includes a multiplicity of additional conductors, including one or more second electrical conductors formed as circuit board traces and located beneath said ceramic element.

10. The module of claim 9 , wherein each of said one or more second electrical conductors are elongated and have contact pads located at opposing ends thereof, and further wherein said multiplicity of additional conductors includes a plurality of electrical contact posts located on said contact pads and adjacent said ceramic element.

11. The module of claim 10 , wherein said multiplicity of additional conductors includes one or more wire bonds located over said ceramic element and connecting said electrical conductor posts.

12. The module of claim 1 , wherein the metal oxides have a rhombic, dodecahedron or trapezohedron crystalline structure, that includes silicon tetraoxide (SiO.sub.4) with varying amounts of iron oxide (FeO), calcium oxide (CaO), magnesium oxide (MgO), or manganese oxide (MnO) in combination with varying amounts of one or more metal oxides from the group consisting of: aluminum oxide (Al.sub.2.O.sub.3), iron oxide (Fe.sub.2.O.sub.3), chromium oxide (Cr.sub.2.O.sub.3), vanadium oxide (V.sub.2.O.sub.3), zirconium oxide (ZrO.sub.2), titanium oxide (TiO.sub.2), yttrium oxide (Y.sub.2.O.sub.3), cobalt oxide (Co.sub.3.O.sub.4), gadolinium oxide (Gd.sub.2.O.sub.3), neodymium oxide (Nd.sub.2.O.sub.3) and holmium oxide (Ho.sub.2.O.sub.3).