Package structure and manufacturing method thereof

1. A package structure, comprising:

a molding compound having opposing first and second surfaces;

at least one through interlayer via encapsulated in and penetrating through the molding compound;

an antenna element at least partially molded in the molding compound and adjacent to the first surface of the molding compound, and electrically connected to the at least one through interlayer via; and

a semiconductor die located on the second surface of the molding compound and electrically communicated to the antenna element via the at least one through interlayer via.

2. The package structure of claim 1 , further comprising a redistribution layer between the semiconductor die and the molding compound, wherein the redistribution layer is connected to the semiconductor die and is electrically coupled to the antenna element through the at least one through interlayer via.

3. The package structure of claim 2 , wherein the at least one through interlayer via is connected to the antenna element and is electrically coupled to the semiconductor die through the redistribution layer.

4. The package structure of claim 1 , further comprising a plurality of conductive elements electrically coupled to the semiconductor die, wherein the plurality of conductive elements and the semiconductor die are located at a side of the molding compound.

5. The package structure of claim 4 , wherein the semiconductor die and the plurality of conductive elements are overlapped with each other along a direction different from a stacking direction of the semiconductor die, the molding compound, and the antenna element.

6. The package structure of claim 4 , wherein the plurality of conductive elements are laterally arranged aside of a positioning location of the semiconductor die along a direction perpendicular to the stacking direction.

7. The package structure of claim 4 , wherein the plurality of conductive elements are free of the molding compound.

8. A package structure, comprising:

a first molding compound and a second molding compound located on the first molding compound;

a semiconductor die, molded in the first molding compound; and

a through interlayer via wall, located on and electrically connected to the semiconductor die and having a frame shape with an inner surface and an outer surface facing to the inner surface, wherein the through interlayer via wall is molded in the second molding compound, and a cavity is located inside the through interlayer via wall and surrounds by the inner surface.

9. The package structure of claim 8 , wherein the through interlayer via wall has the frame shape of a continuous structure.

10. The package structure of claim 8 , wherein the through interlayer via wall has the frame shape of a discontinuous structure with slits.

11. The package structure of claim 8 , wherein the inner surface of the through interlayer via wall is free of the second molding compound, and the outer surface of through interlayer via wall is wrapped by the second molding compound.

12. The package structure of claim 8 , further comprising an antenna element located over and electrically connected to the semiconductor die, wherein the antenna element has a first portion, a second portion and a third portion connecting the first portion and the second portion, wherein the first portion of the antenna element is located inside the cavity and free of the first molding compound and the second molding compound, the second portion of the antenna element is connected to through interlayer via wall and free of the first molding compound, and the third portion of the antenna element is molded in the second molding compound and free of the first molding compound.

13. The package structure of claim 12 , further comprising:

a cap layer, located on the antenna element, wherein the antenna element is located between the cap layer and the through interlayer via wall; and

a metallic ring structure, disposed on a surface of the cap layer opposite to the antenna element, wherein the metallic ring structure is located over the through interlayer via wall, and a shape of the metallic ring structure corresponds to the frame shape of the through interlayer via wall.

14. The package structure of claim 8 , further comprising:

a first redistribution layer, located on the semiconductor die;

through interlayer vias, located on the first redistribution layer and molded in the first molding compound; and

a second redistribution layer, located on the through interlayer vias and between the first molding compound and the second molding compound,

wherein the semiconductor die is located between and electrically connected to the first redistribution layer and the second redistribution layer, the through interlayer vias are electrically connected to the semiconductor die through the second redistribution layer, and the through interlayer via wall is electrically connected to the semiconductor die through the second redistribution layer, the through interlayer vias, and the first redistribution layer.

15. The package structure of claim 14 , further comprising:

conductive elements, connected to the first redistribution layer, wherein the conductive elements are electrically connected to the semiconductor die through the first redistribution layer, and the first redistribution layer is located between the conductive elements and the semiconductor die.

16. A manufacturing method of a package structure, comprising:

forming a first redistribution layer;

forming through interlayer vias on the first redistribution layer, wherein the through interlayer vias are electrically connected to the first redistribution layer;

encapsulating the through interlayer vias in a molding compound;

disposing a semiconductor die on the first redistribution layer, wherein the semiconductor die is electrically connected to the first redistribution layer; and

forming an antenna element having a first surface, a second surface opposite to the first surface and a sidewall connecting the first surface and the second surface, wherein the first surface and the sidewall of the antenna element are partially in contact with the molding compound, the second surface is free of the molding compound, and the antenna element is electrically connected to the semiconductor die through the first redistribution layer and the through interlayer vias.

17. The manufacturing method of claim 16 , further comprising:

forming conductive elements on the first redistribution layer,

wherein the antenna element is formed prior to forming the through interlayer vias, encapsulating the through interlayer vias, forming the first redistribution layer, disposing the semiconductor die and forming the conductive elements, forming the through interlayer vias is prior to encapsulating the through interlayer vias, forming the first redistribution layer, disposing the semiconductor die and forming the conductive elements, encapsulating the through interlayer vias is prior to forming the first redistribution layer, disposing the semiconductor die and forming the conductive elements, and forming the first redistribution layer is prior to disposing the semiconductor die and forming the conductive elements,

wherein the conductive elements and the semiconductor die are free of the molding compound and disposed on a single surface of the first redistribution layer, and positioning locations of the conductive elements are aside of a positioning location of the semiconductor die in a vertical projection along a stacking direction of the semiconductor die, the molding compound, and the antenna element.

18. The manufacturing method of claim 16 , further comprising:

forming a second redistribution layer on the semiconductor die, wherein the second redistribution layer is electrically connected to the semiconductor die;

forming a through interlayer via wall on the second redistribution layer, wherein the through interlayer via wall is electrically connected to the second redistribution layer;

encapsulating the through interlayer via wall in the molding compound;

providing a cap layer having a first side disposed with a first metallic pattern; and

disposing the cap layer on the through interlayer via wall and the molding compound via the first side,

wherein forming an antenna element comprises connecting the first metallic pattern to a portion of the through interlayer via wall so that the first metallic pattern and the portion of the through interlayer via wall connected to the first metallic pattern together form the antenna element,

wherein forming the second redistribution layer is prior to forming the through interlayer via wall, encapsulating the through interlayer via wall, forming the through interlayer vias, encapsulating the through interlayer vias, disposing the semiconductor die, forming the first redistribution layer, forming the conductive elements, providing the cap layer, disposed the cap layer and forming the antenna element, forming the through interlayer via wall is prior to encapsulating the through interlayer via wall, forming the through interlayer vias, encapsulating the through interlayer vias, disposing the semiconductor die, forming the first redistribution layer, forming the conductive elements, providing the cap layer, disposed the cap layer and forming the antenna element, encapsulating the through interlayer via wall is prior to forming the through interlayer vias, encapsulating the through interlayer vias, disposing the semiconductor die, forming the first redistribution layer, forming the conductive elements, providing the cap layer, disposed the cap layer and forming the antenna element, forming the through interlayer vias is prior to encapsulating the through interlayer vias, disposing the semiconductor die, forming the first redistribution layer, forming the conductive elements, providing the cap layer, disposed the cap layer and forming the antenna element, encapsulating the through interlayer vias is prior to forming the conductive elements, providing the cap layer, disposed the cap layer and forming the antenna element, forming the conductive elements is providing the cap layer, disposed the cap layer and forming the antenna element, and disposed the cap layer is prior to forming the antenna element,

wherein the first side of the cap layer, an inner sidewall of the through interlayer via wall, a side of the second redistribution layer facing toward the first side of the cap layer and surrounded by the inner sidewall of the through interlayer via wall constitute an accommodated space, and the accommodated space is free of the molding compound.

19. The manufacturing method of claim 18 , after disposed the cap layer on the through interlayer via wall, further comprising:

forming a second metallic pattern on a second side of the cap layer opposite to the first side disposed with the antenna element, wherein the second metallic pattern is disposed over the through interlayer via wall, a shape of the second metallic pattern corresponds to a shape of the through interlayer via wall, and the cap layer is located between the through interlayer via wall and the second metallic pattern.

20. The manufacturing method of claim 18 , wherein encapsulating the through interlayer vias in the molding compound further comprises encapsulating the semiconductor die in the molding compound,

wherein the molding compound comprising a first portion and a second portion, wherein the through interlayer via wall is molded in the second portion of the molding compound, the through interlayer vias and the semiconductor die are molded in the first portion of the molding compound, and the first redistribution layer is sandwiched between the first portion and the second portion of the molding compound.