Ferroelectric memory device and cross-point array apparatus including the same

1. A cross-point array apparatus comprising:

a pillar-shaped structure, disposed in a region where a first conductive line and a second conductive line intersect, having a first tunnel barrier layer, an intermediate electrode layer and a second tunnel barrier layer,

wherein any one of the first and second tunnel barrier layers comprises a ferroelectric material; and

wherein a logic signal information is stored in a nonvolatile manner in the pillar-shaped structure according to an orientation of a remanent polarization of the ferroelectric material in the any one of the first and second tunnel barrier layers;

wherein a first tunnel junction electrode layer is disposed between the first conductive line and the first tunnel barrier layer: and

wherein a second tunnel junction electrode layer is disposed between the second conductive line and the second tunnel barrier layer.

2. The cross-point array apparatus of claim 1 ,

wherein, when a predetermined read voltage is applied to the pillar-shaped structure, a tunneling current that is differentiated according to the orientation of the remanent polarization of the ferroelectric material is generated in the pillar-shaped structure.

3. The cross-point array apparatus of claim 2 ,

wherein the ferroelectric material comprises at least one selected from the group consisting of HfO2, ZrO2, Hf0.5Zr0.5O2, PbZrxTi1-xO3 (0<x<1, PZT), Ba(Sr,Ti)O3 (BST), BaTiO3 (BTO), Bi4-xLaxTi3O12 (0<x<1, BLT), SrBi2Ta2O9 (SBT), BiFeO3, Pb5Ge5O11 (PGO), SrBi2Nb2O9 (SBN) and YMnO3.

4. The cross-point array apparatus of claim 1 ,

wherein one of the first and second tunnel barrier layers comprises a non-ferroelectric metal oxide, and the other of the first and second tunnel barrier layers includes a ferroelectric material.

5. The cross-point array apparatus of claim 4 ,

wherein the non-ferroelectric metal oxide comprises at least one selected from a tantalum oxide (Ta2O5), a titanium oxide (TiO2), an aluminum oxide (Al2O3), and a zinc oxide (ZnO).

6. The cross-point array apparatus of claim 1 ,

wherein the first tunnel barrier layer comprises the ferroelectric material,

the first conductive line and the first tunnel barrier layer are in contact with each other, and

the first conductive line has an electron accumulation region or an electron depletion region depending on the orientation of the remanent polarization of the ferroelectric material.

7. The cross-point array apparatus of claim 1 ,

wherein the first tunnel barrier layer comprises the ferroelectric material,

the first tunnel junction electrode layer and the first tunnel barrier layer are in contact with each other, and

the first tunnel junction electrode layer has an electron accumulation region or an electron depletion region depending on the orientation of the remanent polarization of the ferroelectric material.

8. The cross-point array apparatus of claim 7 ,

wherein the first tunnel junction electrode layer comprises at least one selected from doped silicon, a ruthenium oxide (RuO2), an iridium oxide (IrO2), a niobium-doped strontium titanium oxide (Nb-doped SrTiO3, Nb:STO), a lanthanum strontium manganese oxide (La0.7Sr0.3MnO3), and a lanthanum calcium manganese oxide (La0.5Ca0.5MnO3).

9. The cross-point array apparatus of claim 8 ,

wherein the intermediate electrode layer comprises at least one selected from tungsten (W), titanium (Ti), copper (Cu), aluminum (Al), ruthenium (Ru), platinum (Pt), iridium (Ir), a tungsten nitride, a titanium nitride, and a tantalum nitride.