Display device and method for manufacturing the same
Provided are a display device and a method for manufacturing the same. The display device includes: a connection source electrode and a connection drain electrode connected to a first source electrode a the first drain electrode, respectively by penetrating an isolation insulating layer and a second interlayer dielectric layer to enhance a characteristic of an element and reliability of the display device.
1. A display device comprising:
a first thin film transistor including a first active layer, a first insulating layer on the first active layer, and a first source electrode and a first drain electrode connected to the first active layer through a first contact hole formed in the first insulating layer;
a second thin film transistor including a second active layer on the first insulating layer, a second insulating layer on the second active layer, and a second source electrode and a second drain electrode connected to the second active layer through a second contact hole formed in the second insulating layer; and
a connection source electrode and a connection drain electrode connected to the first source electrode and the first drain electrode, respectively through a third contact hole formed in the second insulating layer,
wherein the first source electrode and the first drain electrode are formed on a same layer as the second active layer,
wherein portions of the second active layer connected to each of the second source electrode and the second drain electrode are conductivized, and
wherein the first source electrode and the first drain electrode are made of a same material as portions of the second active layer connected to each of the second source electrode and the second drain electrode.
2. The display device of claim 1 , further comprising:
an isolation insulating layer between the first thin film transistor and the second thin film transistor,
wherein the connection source electrode and the connection drain electrode are connected to the first source electrode and the first drain electrode, respectively through the third contact hole formed in the isolation insulating layer and the second insulating layer.
3. The display device of claim 1 , wherein the first active layer is made of low temperature polycrystalline silicon (LTPS), and
the second active layer is made of an oxide semiconductor.
4. The display device of claim 1 , wherein at least one of the first source electrode and the first drain electrode is in contact with an upper surface of the first active layer.
5. The display device of claim 1 , wherein the connection source electrode and the connection drain electrode are formed on a same layer as the second source electrode and the second drain electrode.
6. A display device comprising:
a first thin film transistor including a first active layer, a first insulating layer on the first active layer, and a first source electrode and a first drain electrode connected to the first active layer through a first contact hole of the first insulating layer; and
a second thin film transistor including a second active layer on the first insulating layer, a second insulating layer on the second active layer, and a second source electrode and a second drain electrode connected to the second active layer through a second contact hole of the second insulating layer,
wherein the first source electrode and the first drain electrode are formed of a conductivized semiconductor material, and
wherein the first source electrode and the first drain electrode are made of a same material as portions of the second active layer connected to the second source electrode and the second drain electrode, respectively.
7. The display device of claim 6 , wherein the first active layer is made of LTPS, and
the second active layer is made of an oxide semiconductor.
8. The display device of claim 6 , wherein the first source electrode and the first drain electrode are made of different materials from the second source electrode and the second drain electrode.
9. The display device of claim 6 , further comprising:
a connection source electrode and a connection drain electrode connected to the first source electrode and the first drain electrode, respectively through a third contact hole of the second insulating layer,
wherein the connection source electrode and the connection drain electrode are formed on a same layer as the second source electrode and the second drain electrode.