Display apparatus
A display apparatus can include a first thin-film transistor including a first active layer having a first polysilicon material, a first gate electrode overlapping the first active layer, a first electrode and a second electrode; a second thin-film transistor including a second active layer having an oxide semiconductor, a second gate electrode overlapping the second active layer, a third electrode and a fourth electrode; and a first emitting electrode of a light emitting element electrically connected to the second electrode of the first thin-film transistor. Also, one end of the first active layer having the first polysilicon material is electrically connected to one or the other end of the second active layer having the oxide semiconductor.
1. A display apparatus comprising:
a first thin-film transistor including a first active layer having a first polysilicon material, a first gate electrode overlapping the first active layer, a first electrode and a second electrode;
a second thin-film transistor including a second active layer having an oxide semiconductor, a second gate electrode overlapping the second active layer, a third electrode and a fourth electrode;
a second metal pattern which overlaps the second active layer of the second thin film transistor, and being disposed under the second active layer of the second thin film transistor; and
a first emitting electrode of a light emitting element electrically connected to the second electrode of the first thin-film transistor,
wherein one end of the first active layer having the first polysilicon material is electrically connected to an end of the second active layer having the oxide semiconductor, and
wherein the second metal pattern does not overlap the first gate electrode parallel to the first active layer of the first thin-film transistor.
2. The display apparatus according to claim 1 , wherein:
the first active layer is disposed on a substrate;
the first electrode and the second electrode of the first thin-film transistor are disposed over the first active layer, and are electrically connected to the first active layer; and
the second electrode of the first thin-film transistor is electrically connected to one of the third and fourth electrodes of the second thin-film transistor.
3. The display apparatus according to claim 2 , further comprising:
a first planarization layer on the first and second electrodes of the first thin-film transistor and the third and fourth electrodes of the second thin-film transistor;
an auxiliary electrode on the first planarization layer and connected to the second electrode of the first thin-film transistor through a contact hole in the first planarization layer; and
a second planarization layer disposed on the auxiliary electrode and the first planarization layer,
wherein the first emitting electrode of the light emitting element is electrically connected to the auxiliary electrode through a contact hole in the second planarization layer.
4. The display apparatus according to claim 1 , further comprising:
a first gate insulating layer disposed between the first gate electrode and the first active layer, and
a second gate insulating layer disposed between the second gate electrode and the second active layer,
wherein the second electrode and the one of the third and fourth electrodes are integrally formed.
5. The display apparatus according to claim 1 ,
wherein each of the third electrode and the fourth electrode of the second thin-film transistor has a single-layer structure,
wherein each of the first electrode and the second electrode of the first thin-film transistor has a stacked structure of an upper electrode layer and a lower electrode layer including a different material from the upper electrode layer, and
wherein the upper electrode layers of the first and the second electrodes of the first thin-film transistor, and the third and fourth electrodes include a same material.
6. The display apparatus according to claim 1 , wherein the first gate electrode includes n+1 layers, in a case of n=1, the second gate electrode has a single-layer structure and the first gate electrode has a stacked structure of a lower metal layer and an upper metal layer.
7. The display apparatus according to claim 6 , wherein the upper metal layer of the first gate electrode includes titanium (Ti) or titanium nitride (TiNx) and
wherein the lower metal layer of the first gate electrode includes a different metal than the upper metal layer.
8. The display apparatus according to claim 1 , further comprising:
a storage capacitor including a first capacitor electrode disposed on a same layer as the first gate electrode, and a second capacitor electrode overlapping the first capacitor electrode so that the first interlayer insulating layer including a first interlayer upper insulating layer and a first interlayer lower insulating layer is interposed therebetween,
wherein an upper surface of the first gate electrode contacts the first interlayer upper insulating layer of the first interlayer insulating layer.
9. The display apparatus according to claim 8 , wherein the first interlayer upper insulating layer is a silicon oxide (SiOx) layer, and the first interlayer lower insulating layer is a silicon nitride (SiNx) layer.
10. The display apparatus according to claim 8 , wherein a region of the first interlayer insulating layer corresponding to the first gate electrode has a double-layer structure.
11. The display apparatus according to claim 8 , wherein each of the first and second electrodes of the first thin-film transistor has a stacked structure of an upper electrode layer and a lower electrode layer including a different material from the upper electrode layer,
and
wherein the lower electrode layers of the first and second electrodes of the first thin-film transistor include a same material as the second capacitor electrode of the storage capacitor.
12. The display apparatus according to claim 1 , further comprising:
a first metal pattern overlapping the first gate electrode and a first interlayer insulating layer;
a first barrier layer disposed between the first active layer and the first electrode of the first thin-film transistor and between the first interlayer insulating layer and the second electrode of the first thin-film transistor; and
a second barrier layer disposed between the first active layer and the second electrode of the first thin-film transistor and between the first interlayer insulating layer and the second electrode of the first thin-film transistor.
13. The display apparatus according to claim 12 , wherein the first electrode, the second electrode, the first metal pattern and the second metal pattern are disposed on the first interlayer insulating layer, and are formed of a same material.
14. The display apparatus according to claim 12 , further comprising:
a third barrier layer between the first metal pattern and the first gate electrode; and
a fourth barrier layer between the second metal pattern and the first interlayer insulating layer.
15. The display apparatus according to claim 14 , wherein the first barrier layer, the second barrier layer, the third barrier layer and the fourth barrier layer are formed of a same material, and
wherein the first barrier layer, the second barrier layer, the third barrier layer and the fourth barrier layer include one of titanium (Ti), calcium (Ca), yttrium (Y), magnesium (Mg), tantalum (Ta), and vanadium (V).
16. The display apparatus according to claim 1 , further comprising:
a light-emitting structure disposed on the first emitting electrode; and
a second emitting electrode disposed on the light-emitting structure.
17. The display apparatus according to claim 1 , further comprising:
a third thin-film transistor including a third active layer having a second polysilicon material, a third gate electrode overlapping the third active layer, a fifth electrode and a sixth electrode.
18. The display apparatus according to claim 17 , wherein each of the third thin-film transistor and the second thin-film transistor is a switching thin-film transistor, and the first thin-film transistor is a driving thin-film transistor.
19. The display apparatus according to claim 17 , wherein the fifth and sixth electrodes of the third thin-film transistor, and the third and fourth electrodes of the second thin-film transistor are formed of a same material.
20. A display apparatus comprising:
a first thin-film transistor including a first active layer having a first polysilicon material, a first gate electrode overlapping the first active layer, a first electrode and a second electrode;
a second thin-film transistor including a second active layer having an oxide semiconductor, a second gate electrode overlapping the second active layer, a third electrode and a fourth electrode; and
a first emitting electrode of a light emitting element electrically connected to the second electrode of the first thin-film transistor,
wherein one end of the first active layer having the first polysilicon material is electrically connected to an end of the second active layer having the oxide semiconductor,
wherein each of the third electrode and the fourth electrode of the second thin-film transistor has a single-layer structure,
wherein each of the first electrode and the second electrode of the first thin-film transistor has a stacked structure of an upper electrode layer and a lower electrode layer including a different material from the upper electrode layer, and
wherein the upper electrode layers of the first and the second electrodes of the first thin-film transistor, and the third and fourth electrodes include a same material.