Method for manufacturing semiconductor device, substrate-processing apparatus, and recording medium
There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.
1. A method for manufacturing a semiconductor device, comprising:
preparing a substrate with an oxide film formed on a surface of the substrate;
performing a pre-processing to form a nitride layer containing oxygen and carbon on a surface of the oxide film by using the oxide film as an oxygen source, and by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate;
supplying a carbon-containing gas to the substrate; and
supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate; and
supplying a gas containing carbon and nitrogen to the substrate, or
by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas containing carbon to the substrate; and
supplying a nitrogen-containing gas to the substrate; and
forming a nitride film containing carbon on the surface of the oxide film on which the pre-processing has been performed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate;
supplying a carbon-containing gas to the substrate; and
supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate; and
supplying a gas containing carbon and nitrogen to the substrate, or
by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas containing carbon to the substrate; and
supplying a nitrogen-containing gas to the substrate.
2. The method of claim 1 , wherein the act of performing the pre-processing and the act of forming the nitride film containing carbon are performed in a state where the substrate is accommodated in a process chamber, and
wherein the method further comprises forming a cap layer on a surface of the nitride film containing carbon in the same process chamber, after the act of forming the nitride film containing carbon.
3. The method of claim 1 , wherein a thickness of the nitride film containing carbon is equal to or greater than 0.2 nm, and is equal to or smaller than 10 nm.
4. The method of claim 1 , wherein a concentration of carbon in the nitride film containing carbon is equal to or higher than 3 atomic %, and is equal to or lower than 10 atomic %.
5. The method of claim 1 , wherein the method further comprises performing an etching process to the substrate on which the nitride film containing carbon is formed.
6. The method of claim 1 , wherein a thickness of the nitride film containing carbon is equal to or greater than 0.5 nm, and is equal to or smaller than 10 nm.
7. The method of claim 1 , wherein a thickness of the nitride film containing carbon is equal to or greater than 1 nm, and is equal to or smaller than 10 nm.
8. The method of claim 1 , wherein a concentration of carbon in the nitride film containing carbon is equal to or higher than 5 atomic %, and is equal to or lower than 9 atomic %.
9. The method of claim 1 , wherein a concentration of carbon in the nitride film containing carbon is equal to or higher than 7 atomic %, and is equal to or lower than 8 atomic %.
10. The method of claim 1 , wherein a concave portion is formed on the surface of the substrate, and the oxide film is formed on an inner surface of the concave portion,
wherein, in the act of forming the nitride film containing carbon, the nitride film containing carbon is formed to fill an interior of the concave portion on which the oxide film is formed,
wherein the method further comprises after the act of forming the nitride film containing carbon, heat-processing the substrate under a temperature higher than a temperature of the substrate in the act of forming the nitride film containing carbon, and
wherein the act of performing the pre-processing and the act of forming the nitride film containing carbon are performed in a state where the substrate is accommodated in a process chamber.
11. The method of claim 10 , wherein, in the act of heat-processing, a portion of carbon is desorbed from the nitride film containing carbon.
12. The method of claim 10 , wherein, in the act of heat-processing, the nitride film containing carbon formed in the interior of the concave portion is joined with no gap.
13. The method of claim 10 , an aspect ratio of the concave portion is equal to or greater than 5, and is equal to or less than 100.
14. A substrate-processing apparatus, comprising:
a process chamber in which a substrate is processed;
a supply system configured to supply gases to the substrate in the process chamber; and
a controller configured to control the supply system so as to:
after the substrate with an oxide film formed on a surface of the substrate is prepared in the process chamber, perform a pre-processing to form a nitride layer containing oxygen and carbon on a surface of the oxide film by using the oxide film as an oxygen source, and by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate;
supplying a carbon-containing gas to the substrate; and
supplying a nitrogen-containing gas to the substrate, or
by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate; and
supplying a gas containing carbon and nitrogen to the substrate, or
by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas containing carbon to the substrate; and
supplying a nitrogen-containing gas to the substrate; and
form a nitride film containing carbon on the surface of the oxide film on which the pre-processing has been performed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate;
supplying a carbon-containing gas to the substrate; and
supplying a nitrogen-containing gas to the substrate, or
by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate; and
supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas containing carbon to the substrate; and
supplying a nitrogen-containing gas to the substrate.
15. A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process, the process comprising:
preparing a substrate with an oxide film formed on a surface of the substrate;
performing a pre-processing to form a nitride layer containing oxygen and carbon on a surface of the oxide film by using the oxide film as an oxygen source, and by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate;
supplying a carbon-containing gas to the substrate; and
supplying a nitrogen-containing gas to the substrate, or
by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate; and
supplying a gas containing carbon and nitrogen to the substrate, or
by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas containing carbon to the substrate; and
supplying a nitrogen-containing gas to the substrate; and
forming a nitride film containing carbon on the surface of the oxide film on which the pre-processing has been performed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate;
supplying a carbon-containing gas to the substrate; and
supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate; and
supplying a gas containing carbon and nitrogen to the substrate, or
by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas containing carbon to the substrate; and
supplying a nitrogen-containing gas to the substrate.