Semiconductor device
Provided is a semiconductor device exemplified by an inverter circuit and a shift register circuit, which is characterized by a reduced number of transistors. The semiconductor device includes a first transistor, a second transistor, and a capacitor. One of a source and a drain of the first transistor is electrically connected to a first wiring, and the other thereof is electrically connected to a second wiring. One of a source and a drain of the second transistor is electrically connected to the first wiring, a gate of the second transistor is electrically connected to a gate of the first transistor, and the other of the source and the drain of the second transistor is electrically connected to one electrode of the capacitor, while the other electrode of the capacitor is electrically connected to a third wiring. The first and second transistors have the same conductivity type.
1. A semiconductor device comprising:
a first transistor;
a second transistor;
a third transistor;
a fourth transistor;
a fifth transistor; and
a capacitor,
wherein each of the first transistor, the second transistor, the third transistor, the fourth transistor and the fifth transistor comprises a gate, a first terminal and a second terminal,
wherein the gate of the first transistor is electrically connected to a first electrode of the capacitor,
wherein the gate of the second transistor is electrically connected to the first electrode of the capacitor,
wherein the first terminal of the second transistor is electrically connected to a second electrode of the capacitor,
wherein the first terminal of the third transistor is electrically connected to the second electrode of the capacitor,
wherein the second terminal of the first transistor is electrically connected to the gate of the fourth transistor,
wherein the first terminal of the fourth transistor is electrically connected to the first terminal of the fifth transistor, and
wherein a signal is input to the first electrode of the capacitor.
2. The semiconductor device according to claim 1 ,
wherein the signal oscillates between a high state and a low state.
3. The semiconductor device according to claim 1 ,
wherein the first to fifth transistors have the same conductivity type.
4. The semiconductor device according to claim 1 ,
wherein at least one of the first to fifth transistors comprises an oxide semiconductor in a channel formation region.
5. A display device comprising:
a pixel portion over a substrate; and
a scan line driver circuit over the substrate, the scan line driver circuit comprising:
a first transistor;
a second transistor;
a third transistor;
a fourth transistor;
a fifth transistor; and
a capacitor,
wherein each of the first transistor, the second transistor, the third transistor, the fourth transistor and the fifth transistor comprises a gate, a first terminal and a second terminal,
wherein the gate of the first transistor is electrically connected to a first electrode of the capacitor,
wherein the gate of the second transistor is electrically connected to the first electrode of the capacitor,
wherein the first terminal of the second transistor is electrically connected to a second electrode of the capacitor,
wherein the first terminal of the third transistor is electrically connected to the second electrode of the capacitor,
wherein the second terminal of the first transistor is electrically connected to the gate of the fourth transistor,
wherein the first terminal of the fourth transistor is electrically connected to the first terminal of the fifth transistor, and
wherein a signal is input to the first electrode of the capacitor.
6. The display device according to claim 5 ,
wherein the signal oscillates between a high state and a low state.
7. The display device according to claim 5 ,
wherein the first to fifth transistors have the same conductivity type.
8. The display device according to claim 5 ,
wherein at least one of the first to fifth transistors comprises an oxide semiconductor in a channel formation region.