Methods and apparatus for patterned wafer characterization
Disclosed are apparatus and methods for characterizing a plurality of structures of interest on a semiconductor wafer. A plurality of spectra signals are measured from a particular structure of interest at a plurality of azimuth angles from one or more sensors of a metrology system. A difference spectrum is determined based on the spectra signals obtained for the azimuth angles. A quality indication of the particular structure of interest is determined and reported based on analyzing the difference spectrum.
1. A method of characterizing a plurality of structures of interest on a semiconductor wafer, the method comprising:
measuring a plurality of spectra signals from a particular location of a particular structure at a plurality of azimuth angles from one or more sensors of a metrology system, wherein the particular structure is a grating structure that was formed by a semiconductor manufacturing process;
determining a difference amount between the spectra signals obtained for the azimuth angles;
if the difference amount is above a predetermined threshold, determining and reporting that the particular structure does not contain a defect; and
if the difference amount is equal to or lower than the predetermined threshold or equal to zero, determining and reporting that the particular structure contains a defect, wherein such defect is below a surface of the particular structure.
2. The method of claim 1 , wherein determining that the particular structure contains or does not contain a defect is performed without use of a model or extraction of a quantitative feature value from such particular structure.
3. The method of claim 1 , wherein the difference amount is an average difference of a plurality of differences between the spectra signals at the azimuth angles over a plurality of wavelengths.
4. The method of claim 3 , the method further comprising:
determining theoretical or measured difference amounts between spectra signals for the azimuth angles for a nondefective grating structure; and
normalizing the average difference by the theoretical or measured difference amounts to determine a defect quantity.
5. The method of claim 1 , wherein the difference amount is a highest one of a plurality of differences between the spectra signals at the azimuth angles at a particular one of a plurality of wavelength ranges.
6. The method of claim 1 , wherein measuring spectra includes generating a differential model by using two dimensional beam profile reflectometry.
7. The method of claim 6 , further comprising determining a differential model between an image and best fit of a radially symmetric image with a residual error and determining whether the difference spectra indicate a film or defective structure based on such differential model.
8. The method of claim 1 , wherein the particular structure is selected from a Directed Self Assembly (DSA) structure, under layer non-Directed Self Assembly (non-DSA) structure, or patterned resist structure.
9. The method of claim 1 , wherein the defect is a subsurface defect.
10. The method of claim 9 , wherein the particular structure is a Directed Self Assembly (DSA) structure, wherein correcting the particular structure and/or correcting the manufacturing process comprises correcting a chemoepitaxy of the DSA structure.
11. The method of claim 9 , wherein the particular structure is a Directed Self Assembly (DSA) structure, wherein correcting the particular structure and/or correcting the manufacturing process comprises correcting a photolithography process' exposure and/or dose for forming the DSA structure.
12. A method of characterizing a plurality of structures of interest on a semiconductor wafer, the method comprising:
measuring a plurality of spectra signals from a particular structure of interest at a plurality of azimuth angles from one or more sensors of a metrology system;
determining a difference spectrum based on the spectra signals obtained for the azimuth angles;
determining and reporting a quality indication of the particular structure of interest based on analyzing the difference spectrum;
collecting reference data that quantifies pattern defects using a CD SEM tool;
obtaining spectra signals at the azimuth angles from a training set of pattern structures having known pattern defects;
determining a first relation function between spectra signals measured at different azimuth angles and a residual error, wherein the first relationship is based on the spectra signals obtained at the azimuth angles from the training set;
determining a second relation function between a residual error and a quantification of pattern defects based on the reference data; and
inputting the spectra signals measured from the particular structure of interest at the azimuth angles into the second relation function to determine a quantification of pattern defects for such particular structure.
13. The method of claim 12 , wherein the first and second relation functions are based on a data reduction technique applied to the spectra signals and residual errors for the training set and the particular structure.
14. A semiconductor metrology system, comprising:
an illuminator for generating illumination;
illumination optics for directing the illumination towards a particular location of a particular structure at a plurality of azimuth angles, wherein the particular structure is a grating structure that was formed by a semiconductor manufacturing process;
collection optics for directing a plurality of spectra signals in response to the illumination at the azimuth angles from the particular structure to a sensor;
the sensor for acquiring the plurality of spectra signals from the particular structure for the azimuth angles; and
a processor and memory configured for performing the following operations:
determining a difference amount between the spectra signals obtained for the azimuth angles;
if the difference amount is above a predetermined threshold, determining and reporting that the particular structure does not contain a defect; and
if the difference amount is equal to or lower than the predetermined threshold or equal to zero, determining and reporting that the particular structure contains a defect, wherein such defect is below a surface of the particular structure.
15. The system of claim 14 , wherein determining that the particular structure contains or does not contain a defect is performed without use of a model or extraction of a quantitative feature value from such particular structure.
16. The system of claim 14 , wherein the difference amount is an average difference of a plurality of differences between the spectra signals at the azimuth angles over a plurality of wavelengths.
17. The system of claim 16 , the processor and memory being configured for:
determining theoretical or measured difference amounts between spectra signals for the azimuth angles for a nondefective grating structure; and
normalizing the average difference by the theoretical or measured difference amounts to determine a defect quantity.
18. The system of claim 14 , wherein the difference amount is a highest one of a plurality of differences between the spectra signals at the azimuth angles at a particular one of a plurality of wavelength ranges.
19. The system of claim 14 , wherein measuring spectra includes generating a differential model by using two dimensional beam profile reflectometry.
20. The system of claim 19 , the processor and memory being configured for determining a difference between the differential model between an image and best fit of a radially symmetric image.
21. The system of claim 14 , wherein the particular structure is selected from a Directed Self Assembly (DSA) structure, under layer non-Directed Self Assembly (non-DSA) structure, or patterned resist structure.
22. The system of claim 14 , the processor and memory being configured for:
collecting reference data that quantifies pattern defects using a CD SEM tool;
obtaining spectra signals at the azimuth angles from a training set of pattern structures having known pattern defects;
determining a first relation function between spectra signals measured at different azimuth angles and a residual error, wherein the first relationship is based on the spectra signals obtained at the azimuth angles from the training set;
determining a second relation function between a residual error and a quantification of pattern defects based on the reference data; and
inputting the spectra signals measured from the particular structure at the azimuth angles into the second relation function to determine a quantification of pattern defects for such particular structure.
23. The system of claim 22 , wherein the first and second relation functions are based on a data reduction technique applied to the spectra signals and residual errors for the training set and the particular structure.
24. The system of claim 14 , wherein the defect is a subsurface defect.
25. The system of claim 24 , wherein the particular structure is a Directed Self Assembly (DSA) structure, wherein correcting the particular structure and/or correcting the manufacturing process comprises correcting a chemoepitaxy of the DSA structure.
26. The system of claim 24 , wherein the particular structure is a Directed Self Assembly (DSA) structure, wherein correcting the particular structure and/or correcting the manufacturing process comprises correcting a photolithography process' exposure and/or dose for forming the DSA structure.
27. A method of characterizing a film of interest on a semiconductor wafer, the method comprising:
at one or more sensors of a metrology system, measuring a plurality of spectra signals from a plurality of neighboring locations at a measurement site of the film or a structure that is designed to be uniform across the measurement site;
determining an average or mean signal of the spectra signals;
determining a standard deviation of each of the spectra signals at each location from the average or mean signal;
if one or more of the standard deviations of the spectra signals is above a predetermined threshold from the average or mean, determining and reporting that the film or structure contains a defect; and
if one or more of the standard deviations of the spectra signals is equal to or lower than the predetermined threshold or equal to zero, determining and reporting that the film or structure does not contain a defect.