Particle generation suppresor by DC bias modulation
Embodiments of the present disclosure generally relate to an apparatus and method for reducing particle generation in a processing chamber. In one embodiment, an apparatus for processing a substrate is disclosed. The apparatus includes a chamber body, a lid assembly disposed above the chamber body, the lid assembly comprising a top electrode and a bottom electrode positioned substantially parallel to the top electrode, a gas distribution plate disposed between a substrate processing region and the lid assembly, and a substrate support disposed within the chamber body, the substrate support supporting having a substrate supporting surface, wherein the top electrode is in electrical communication with a radio frequency (RF) power supply and a DC bias modulation configuration, and the DC bias modulation configuration is configured to operate the top electrode at a constant zero DC bias voltage during a process.
1. An apparatus for processing a substrate, comprising:
a chamber body;
a lid assembly disposed above the chamber body, the lid assembly comprising a top electrode and a bottom electrode positioned substantially parallel to the top electrode;
a gas distribution plate disposed between a substrate processing region and the lid assembly; and
a substrate support disposed within the chamber body, the substrate support supporting having a substrate supporting surface,
wherein the top electrode is in electrical communication with a radio frequency (RF) power supply and a DC bias modulation configuration, and the DC bias modulation configuration is configured to operate the top electrode at a constant zero DC bias voltage during a process.
2. The apparatus of claim 1 , wherein the DC bias modulation configuration is disposed between the top electrode and ground.
3. The apparatus of claim 2 , wherein the DC bias modulation configuration comprises a DC power supply and a power controller configured to apply a constant zero DC bias voltage to the top electrode.
4. The apparatus of claim 3 , wherein the DC bias modulation configuration further comprises a RF filter coupled to the DC power supply and configured to prevent RF signals from the RF power supply to enter the DC power supply.
5. The apparatus of claim 2 , wherein the DC bias modulation configuration comprises an electrical component configured to direct a DC bias generated at the top electrode to ground.
6. The apparatus of claim 5 , wherein the electrical component comprises a low pass filter.
7. The apparatus of claim 6 , wherein the electrical component provides a high impedance path to RF signal from the RF power supply and a low or no impedance path to DC signal from the top electrode.
8. The apparatus of claim 5 , wherein the electrical component comprises a core element and a coil wound around a portion of the core element.
9. The apparatus of claim 8 , wherein the core element comprise a high magnetic permeability rod or tube.
10. The apparatus of claim 5 , wherein the electrical component comprises a band pass filter in a single-stage or multi-stage configuration.
11. The apparatus of claim 1 , wherein the process is a plasma etch process.
12. The apparatus of claim 1 , wherein the process is a film deposition process.
13. The apparatus of claim 1 , wherein the RF power supply provides RF power of about 5 W to 5000 W during the process.