Semiconductor processing apparatus and method
This application relates to a semiconductor processing apparatus and method. In an embodiment of this application, the semiconductor processing apparatus includes: a wafer pocket provided with a lower electrode, where the lower electrode is coupled to a direct-current power supply; and an upper electrode disposed opposite to the wafer pocket, where the upper electrode is coupled to a radio frequency generator through a matching circuit, and is grounded through a low-pass filter.
1. A semiconductor processing apparatus comprising:
a wafer pocket comprising a first electrode;
a direct-current power supply coupled to the first electrode;
a second electrode opposing the wafer pocket;
a radio frequency generator; and
a matching circuit that couples the second electrode and the radio frequency generator, wherein:
the matching circuit comprises:
a matching network comprising a ceramic chip capacitor; and
a low-pass filter disposed in the matching circuit,
the low-pass filter grounds the second electrode, and
the low-pass filter is outside the matching network and connected to the ceramic chip capacitor.
2. The semiconductor processing apparatus according to claim 1 , wherein the low-pass filter is configured to form a direct-current leakage current channel in the matching circuit via the ceramic chip capacitor.
3. The semiconductor processing apparatus according to claim 2 , wherein the ceramic chip capacitor is doped with a metal.
4. The semiconductor processing apparatus according to claim 1 , wherein the matching network comprises an inductor connected in series to the ceramic chip capacitor.