Substrate processing method and substrate processing apparatus
A substrate processing method performed in a chamber of a substrate processing apparatus is provided. The chamber includes a substrate support, an upper electrode, and a gas supply port. The substrate processing method includes (a) providing the substrate on the substrate support; (b) supplying a first processing gas into the chamber; (c) continuously supplying an RF signal into the chamber while continuously supplying a negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber; and (d) supplying a pulsed RF signal while continuously supplying the negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber. The process further includes repeating alternately repeating the steps (c) and (d), and a time for performing the step (c) once is 30 second or shorter.
1. A substrate processing method comprising:
(a) providing a substrate on a substrate support disposed in a chamber;
(b) supplying a first processing gas into the chamber;
(c) continuously supplying an RF signal into the chamber while continuously supplying a negative DC voltage to an upper electrode provided to face the substrate support, to generate plasma from the first processing gas in the chamber; and
(d) supplying a pulsed RF signal while continuously supplying the negative DC voltage to the upper electrode, to generate plasma from the first processing gas,
wherein (c) and (d) are alternately repeated, and
a time for performing (c) once is 30 second or shorter.
2. The substrate processing method according to claim 1 , wherein a time for performing (d) once is 60 seconds or shorter.
3. The substrate processing method according to claim 1 , wherein in (d), a ratio of a time period for supplying the RF signal to one cycle of the pulsed RF signal is 90% or more.
4. The substrate processing method according to claim 1 , wherein in (d), a time period of one cycle of the pulsed RF signal is 50 milliseconds or shorter.
5. The substrate processing method according to claim 1 , wherein in (d), a frequency of the pulsed RF signal is 20 Hz or higher.
6. The substrate processing method according to claim 1 , wherein in (d), a duty ratio of the pulsed RF signal is 90% or more.
7. The substrate processing method according to claim 1 , wherein in (d), an absolute value of the negative DC voltage supplied to the upper electrode in a time period during which the supply of the RF signal is cut off is larger than an absolute value of the negative DC voltage supplied to the upper electrode m a time period during which the RF signal is supplied.
8. The substrate processing method according to claim 1 , wherein the substrate includes a conductive film, an insulating film provided on the conductive film, and a mask film provided on the insulating film and having a predetermined pattern formed therein.
9. The substrate processing method according to claim 8 , wherein the insulating film is an oxide film, and the conductive film is a film of silicon or tungsten.
10. The substrate processing method according to claim 1 , wherein the first processing gas includes a gas containing carbon and fluorine, an oxygen-containing gas, and a rare gas.
11. The substrate processing method according to claim 10 , wherein the gas containing carbon and fluorine is C 4 F 8 gas or C 4 F 6 gas.
12. The substrate processing method according to claim 10 , wherein the oxygen-containing gas is O 2 gas or CO gas.
13. The substrate processing method according to claim 10 , wherein the rare gas is Ar gas.
14. The substrate processing method according to claim 10 , further comprising:
(e) supplying a second processing gas that includes a nitrogen-containing gas and a rare gas into the chamber, after (c) and (d) are repeated; and
(f) supplying the RF signal into the chamber to generate plasma from the second processing gas, thereby removing polymer that remains in a hole formed in the substrate as a result of (c) and (d).
15. The substrate processing method according to claim 14 , wherein the nitrogen-containing gas is N 2 gas, and the rare gas is Ar gas.
16. The substrate processing method according to claim 1 , wherein in (c) and (d), a peak-to-peak magnitude of a voltage of the pulsed RF signal is controlled to fall within a predetermined range.
17. A substrate processing method comprising:
(a) providing a substrate on a substrate support disposed in a chamber;
(b) supplying a first processing gas into the chamber;
(c) continuously supplying an RF signal into the chamber while continuously supplying a negative DC voltage to an upper electrode provided to face the substrate support, to generate plasma from the first processing gas in the chamber; and
(d) supplying a pulsed RF signal while continuously supplying the negative DC voltage to the upper electrode, to generate plasma from the first processing gas,
wherein (c) and (d) are alternately repeated, and
a processing time for performing (c) is shorter than a processing time for performing (d).