Variable thickness diaphragm for a wideband robust piezoelectric micromachined ultrasonic transducer (PMUT)
A diaphragm for a piezoelectric micromachined ultrasonic transducer (PMUT) is presented having resonance frequency and bandwidth characteristics which are decoupled from one another into independent variables. Portions of at least the piezoelectric material layer and backside electrode layer are removed in a selected pattern to form structures, such as ribs, in the diaphragm which retains stiffness while reducing overall mass. The patterned structure can be formed by additive, or subtractive, fabrication processes.
1. An apparatus for ultrasonic generation and sensing, comprising:
(a) at least one elastic layer;
(b) at least one piezoelectric material layer mechanically coupled to said elastic layer; and
(c) at least one electrode of electrically conductive material disposed in electrical contact with each side of said piezoelectric material providing electrodes for said piezoelectric material as a backside electrode and frontside electrode, wherein said frontside electrode comprises conductive material formed in a closed shape and surrounding an open area in which there is no conductive material;
(d) wherein a combination of said elastic layer, piezoelectric material layer, backside electrode, and frontside electrode form an ultrasonic diaphragm configured for: (i)generating ultrasonic signals in response to applying a selected transmission voltage waveform signal between said backside electrode and said frontside electrode, or (ii) sensing ultrasonic signals in response to sensing a received voltage waveform signal between said backside electrode and said frontside electrode, or (iii) performing a combination of (d)(i) and (d)(ii); and
(e) wherein said diaphragm has a surface patterned with selective thinned areas through a combination of at least said piezoelectric material layer and said electrodes to vary the diaphragm thickness at specific locations to independently select mass and stiffness toward increasing bandwidth and reducing sensitivity to residual stress, and wherein said diaphragm either (i) is patterned with multiple ribs of material from said piezoelectric layer and said backside electrode which extend in layers from beneath said frontside electrode into an area beneath the open region in said frontside electrode, or (ii) is patterned on its surface beneath the open area of said closed shape in the frontside electrode, and also beneath a portion of said frontside electrode.
2. An apparatus for ultrasonic sound generation and sensing, comprising:
(a) at least one elastic layer;
(b) at least one piezoelectric material layer mechanically coupled to said elastic layer;
(c) at least one electrode of electrically conductive material disposed in electrical contact with each side of said piezoelectric material providing electrodes for said piezoelectric material as a backside electrode and a frontside electrode, wherein said frontside electrode comprises conductive material formed in a closed shape and surrounding an open area in which there is no conductive material;
(d) wherein a combination of said elastic layer, piezoelectric material layer, backside electrode, and frontside electrode form a diaphragm;
(e) wherein said diaphragm is configured for: (i) generating ultrasonic signals in response to applying a selected transmission voltage waveform signal between said backside electrode and said frontside electrode, or (ii) sensing ultrasonic signals in response to sensing a received voltage waveform signal between said backside electrode and said frontside electrode, or (iii) performing a combination of (e)(i) and (e)(ii); and
(f) wherein said diaphragm is patterned on its surface leaving thinned areas passing through at least said piezoelectric layer and said backside electrode which configure said diaphragm with a selected mass and stiffness toward increasing bandwidth and reducing sensitivity to residual stress, and wherein said diaphragm either (i) is patterned with multiple ribs of material from said piezoelectric layer and said backside electrode which extend in layers from beneath said frontside electrode into an area beneath the open region in said frontside electrode, or (ii) patterned on its surface beneath the open area of said closed shape in the frontside electrode, and also beneath a portion of said frontside electrode.
3. The apparatus as recited in claim 1 or claim 2 , further comprising a base structure having a closed shape surrounding an opening over which said diaphragm is disposed.
4. The apparatus as recited in claim 3 , wherein said opening in said base structure forms a backside tube.
5. The apparatus as recited in claim 1 or claim 2 , wherein said diaphragm is patterned underneath the layer of said frontside electrode in an area beneath said open area in said frontside electrode.
6. The apparatus as recited in claim 1 or claim 2 , wherein said diaphragm is patterned leaving thinned areas which pass through said piezoelectric layer and said backside electrode, as well as through a portion of said elastic layer reducing its thickness.
7. The apparatus as recited in claim 1 or claim 2 , wherein for the diaphragm patterned with multiple ribs, said ribs are distributed with equal spacing extending in layers from beneath said frontside electrode into area beneath the open region in said frontside electrode.
8. The apparatus as recited in claim 1 or claim 2 , wherein for the diaphragm patterned with multiple ribs, each of said ribs tapers along its length extending in the layers from beneath said frontside electrode into the area beneath the open region in said frontside electrode.
9. The apparatus as recited in claim 1 or claim 2 , wherein for the diaphragm patterned with multiple ribs, each of said ribs taper in an isosceles triangle shape or isosceles trapezoid shape.
10. The apparatus as recited in claim 1 or claim 2 , wherein said patterning of said diaphragm comprises material layer remnants of said diaphragm after said open areas in said piezoelectric layer and said electrode backside electrode have been removed.
11. The apparatus as recited in claim 1 or claim 2 , wherein said diaphragm is patterned with material added in said piezoelectric layer and said backside electrode to surround said open areas in said diaphragm.
12. The apparatus as recited in claim 1 or claim 2 , wherein said diaphragm is patterned on its surface to decouple resonance frequency and bandwidth characteristics making them substantially independent variables.
13. The apparatus as recited in claim 1 or claim 2 , wherein said piezoelectric layer comprises a material selected from the group of piezoelectric materials consisting of Aluminum Nitride (AIN), Apatite, Barium Titanate (BaTiO 3 ), Berlinite (AIPO 4 ), various Ceramic materials, Allium Phosphate, Gallium Orthophosphate, Gallium Nitride (GaN), Lanthanum Gallium Silicate, Lead Scandium Tantalate, Lead Magnesium Niobate (PMN), Lead Zirconate Titanate (PZT), Lithium Tantalate, Polyvinylidene Fluoride (PVDF), Potassium Sodium Tartrate, Quartz (SiO 2 ), Zinc Oxide (ZnO), and combinations thereof.
14. The apparatus as recited in claim 1 or claim 2 , wherein said elastic layer comprises a passive material.
15. The apparatus as recited in claim 14 , wherein said passive material comprises Silicon (Si), Silicon Nitride (Si 3 N 4 ), or an oxide of Silicon, including SiO 2 .
16. The apparatus as recited in claim 1 or claim 2 , wherein said elastic layer comprises an active piezoelectric material.
17. The apparatus as recited in claim 16 , wherein said elastic layer comprises a material selected from a group of piezoelectric materials consisting of Aluminum Nitride (AIN), Apatite, Barium Titanate (BaTiO 3 ), Berlinite (AIPO 4 ), various Ceramic materials, Allium Phosphate, Gallium Orthophosphate, Gallium Nitride (GaN), Lanthanum Gallium Silicate, Lead Scandium Tantalate, Lead Magnesium Niobate (PMN), Lead Zirconate Titanate (PZT), Lithium Tantalate, Polyvinylidene Fluoride (PVDF), Potassium Sodium Tartrate, Quartz (SiO 2 ), Zinc Oxide (ZnO), and combinations thereof.
18. The apparatus as recited in claim 1 or claim 2 , wherein the apparatus comprises a piezoelectric micromachined ultrasonic transducer (PMUT).
19. The apparatus as recited in claim 1 or claim 2 , wherein said apparatus comprises a piezoelectric micromachined ultrasonic transducer (PMUT) utilized in an array of PMUTs.
20. The apparatus as recited in claim 1 or claim 2 , wherein a surface of said diaphragm is patterned by selectively etching said diaphragm to remove material from a center portion of said diaphragm.
21. The apparatus as recited in claim 1 or claim 2 , wherein the diaphragm surface is selectively etched to leave radial stiffening ribs at the perimeter of the diaphragm.
22. The apparatus as recited in claim 1 or claim 2 , wherein the diaphragm diameter is from approximately 100 microns to 2 millimeters and the maximum thickness of the diaphragm is from 1 micron to 40 microns.
23. The apparatus as recited in claim 1 or claim 2 , wherein the center frequency ranges from 40 kHz to 800 kHz.
24. The apparatus as recited in claim 1 or claim 2 , wherein an array of transducers all having an identical nominal center frequency are fabricated on a common substrate.