Semiconductor device package and method of manufacturing the same
A semiconductor device package includes a substrate, a first electronic component, a first package body, an electrical contact and a first conductive layer. The substrate has a first surface, a second surface and a lateral surface extending between the first surface and the second surface. The first electronic component is disposed on the first surface of the substrate. The first package body encapsulates the first electronic component. The electrical contact is disposed on the second surface of the substrate. The first conductive layer includes a first portion and a second portion. The first portion is disposed on the first package body and the lateral surface of the substrate. The second portion contacts the electrical contact.
1. A semiconductor device package, comprising:
a substrate having a first surface, a second surface and a lateral surface extending between the first surface and the second surface;
a first electronic component disposed on the first surface of the substrate;
a first package body encapsulating the first electronic component;
an external connection element disposed on the second surface of the substrate; and
a first conductive layer including:
a first portion disposed on the first package body and the lateral surface of the substrate, and
a second portion contacting a lower surface of the first portion and contacting the external connection element.
2. The semiconductor device package of claim 1 , wherein the second portion of the first conductive layer contacts the second surface of the substrate.
3. The semiconductor device package of claim 2 , further comprising:
a second electronic component disposed on the first surface of the substrate;
a first conductive element disposed in the first package body and separating the first electronic component from the second electronic component.
4. The semiconductor device package of claim 2 , further comprising:
a second electronic component disposed on the second surface of the substrate;
a second package body encapsulating the second electronic component; and
a second conductive layer disposed on the second package body,
wherein the second conductive layer is electrically connected to the external connection element.
5. The semiconductor device package of claim 4 , further comprising:
a third electronic component disposed on the second surface of the substrate; and
a first conductive element disposed in the second package body and separating the second electronic component from the third electronic component.
6. The semiconductor device package of claim 4 , wherein the second portion of the first conductive layer comprises a protrusion covering a portion of the external connection element.
7. The semiconductor device package of claim 1 , wherein the external connection element covers a portion of the second portion of the first conductive layer.
8. The semiconductor device package of claim 1 , wherein a thickness of the first portion of the first conductive layer is greater than a thickness of the second portion of the first conductive layer.
9. The semiconductor device package of claim 8 , wherein the thickness of the first portion of the first conductive layer is at least three times greater than the thickness of the second portion of the first conductive layer.
10. The semiconductor device package of claim 1 , further comprising:
a second electronic component disposed on the second surface of the substrate; and
a second package body encapsulating the second electronic component and the external connection element, the second package body having a lateral surface and a first surface, wherein the external connection element is exposed from the first surface of the second package body;
wherein the first portion of the first conductive layer is disposed on the lateral surface of the second package body;
wherein the second portion of the first conductive layer is disposed on the first surface of the second package body.
11. The semiconductor device package of claim 10 , further comprising:
a third electronic component disposed on the first surface of the substrate;
a first conductive element disposed in the first package body and separating the first electronic component from the third electronic component.
12. The semiconductor device package of claim 11 , further comprising:
a second conductive element disposed in the second package body and surrounding the second electronic component; and
a second conductive layer disposed on the second package body and connected to the second conductive element,
wherein the second conductive element is electrically connected to the external connection element.
13. The semiconductor device package of claim 12 , further comprising:
a fourth electronic component disposed on the second surface of the substrate; and
a third conductive element disposed in the second package body and separating the second electronic component from the fourth electronic component.
14. The semiconductor device package of claim 10 , wherein the second portion of the first conductive layer comprises a protruding portion covering a portion of the external connection element.
15. The semiconductor device package of claim 3 , wherein the first conductive element is electrically connected to the external connection element.
16. The semiconductor device package of claim 5 , wherein the first conductive element is electrically connected to the external connection element.
17. The semiconductor device package of claim 11 , wherein the first conductive element is electrically connected to the external connection element.
18. The semiconductor device package of claim 12 , wherein the second conductive element is electrically connected to the external connection element.
19. The semiconductor device package of claim 13 , wherein the third conductive element is electrically connected to the external connection element.