System on chip
A method is provided. The method includes forming a first to third gate lines on a substrate, the second gate line formed between the first and third gate lines; forming a gate isolation region to cut the first to third gate lines into two first sub gate lines, two second sub gate lines and two third sub gate lines, respectively; forming a first gate contact on one of the two first sub gate lines; forming a second gate contact on the two second sub gate lines; forming a third gate contact on one of the two third sub gate lines; forming a first metal line to connect the first and third gate contacts; and forming a second metal line. The first to third gate lines extend in a first direction, and the gate isolation region extends in a second direction different from the first direction.
1. A method of forming a system on chip (SoC), the method comprising:
forming a first gate line, a second gate line and a third gate line on a substrate, the second gate line being formed between the first gate line and the third gate line;
forming a gate isolation region to cut the first gate line, the second gate line and the third gate line into two first sub gate lines, two second sub gate lines and two third sub gate lines, respectively;
forming a first gate contact on one of the two first sub gate lines;
forming a second gate contact on the two second sub gate lines to electrically connect the two second sub gate lines;
forming a third gate contact on one of the two third sub gate lines;
forming a first metal line to electrically connect the first gate contact and the third gate contact; and
forming a second metal line, and electrically connecting the second metal line to the second gate contact,
wherein the first gate line, the second gate line and the third gate line extend in a first direction, and
the gate isolation region extends in a second direction that is different from the first direction.
2. The method of claim 1 , wherein the first direction is perpendicular to the second direction.
3. The method of claim 1 , further comprising:
forming a first via on the first gate contact;
forming a second via disposed on the second gate contact to electrically connect the second gate contact and the second metal line; and
forming a third via on the third gate contact.
4. The method of claim 1 , wherein one of the two first sub gate lines and one of the two third sub gate lines are dummy gate lines.
5. The method of claim 4 , wherein the dummy gate lines are arranged opposite to each other with respect to the gate isolation region.