Semiconductor device and method of forming the semiconductor device
A semiconductor device includes a first SiGe fin formed on a substrate and including a first amount of Ge, and a second SiGe fin formed on a substrate and including a central portion including a second amount of Ge, and a surface portion comprising a third amount of Ge which is greater than the second amount.
1. A semiconductor device comprising:
a first diffusion region having a first conductivity type formed on a substrate and including a first projecting portion;
a first SiGe fin formed on the first projecting portion of the first diffusion region and comprising a first amount of Ge;
a second diffusion region having a second conductivity type formed on the substrate and including a second projecting portion;
a second SiGe fin formed on the second projecting portion of the second diffusion region and comprising:
a central portion comprising a second amount of Ge which is substantially equal to the first amount of Ge; and
a surface portion comprising a third amount of Ge which is at least 20% greater than the second amount,
wherein a total width of the central portion and the surface portion is substantially equal to a width of the second projecting portion of the second diffusion region.
2. The semiconductor device of claim 1 , wherein the surface portion of the second SiGe fin comprises at least 40% Ge.
3. The semiconductor device of claim 1 , wherein the central portion of the second SiGe fin comprises no more than 20% Ge.
4. The semiconductor device of claim 1 , wherein a height of the first SiGe fin in a vertical direction is substantially equal to a height of the second SiGe fin in the vertical direction, and a width of the first SiGe fin in a horizontal direction is substantially equal to a width of the second SiGe fin in the horizontal direction.
5. The semiconductor device of claim 1 , wherein a thickness of the surface portion of the second SiGe fin is in a range from 1 nm to 4 nm.
6. The semiconductor device of claim 1 , wherein the first SiGe fin comprises a tensile strain.
7. The semiconductor device of claim 1 , wherein the second SiGe fin comprises a compressive strain in a vertical direction of at least 1 Gpa.
8. The semiconductor device of claim 1 , further comprising:
an nFET and a pFET, the first SiGe fin comprising a fin of the nFET and the second SiGe fin comprising a fin of the pFET.
9. The semiconductor device of claim 1 , further comprising:
a bottom spacer formed on the first and second diffusion regions, the first and second projecting portions projecting through the bottom spacer and contacting the first and second SiGe fins, respectively.
10. The semiconductor device of claim 1 , further comprising:
a bottom spacer formed on the second diffusion region, the second projecting portion projecting through the bottom spacer and contacting the second SiGe fin.
11. The semiconductor device of claim 10 , wherein the second projecting portion contacts the central portion and the surface portion of the second SiGe fin.
12. A semiconductor device comprising:
a first diffusion region having a first conductivity type formed on a substrate and including a first projecting portion;
a first SiGe fin formed on the first projecting portion of the first diffusion region and comprising a first amount of Ge;
a second diffusion region having a second conductivity type formed on the substrate and including a second projecting portion;
a second SiGe fin formed on the second projecting portion of the second diffusion region, a height of the second SiGe fin in a vertical direction being substantially equal to a height of the first SiGe fin in the vertical direction, and a width of the second SiGe fin in a horizontal direction being substantially equal to a width of the first SiGe fin in the horizontal direction, and the second SiGe fin comprising:
a central portion comprising a second amount of Ge which is substantially equal to the first amount of Ge and which is no more than 20% Ge; and
a surface portion comprising a third amount of Ge which is at least 20% greater than the second amount,
wherein a total width of the central portion and the surface portion is substantially equal to a width of the second projecting portion of the second diffusion region.
13. The semiconductor device of claim 12 , wherein the surface portion of the second SiGe fin comprises at least 40% Ge.
14. The semiconductor device of claim 12 , wherein a thickness of the surface portion of the second SiGe fin is in a range from 1 nm to 4 nm.
15. The semiconductor device of claim 12 , wherein the first SiGe fin comprises a tensile strain.
16. The semiconductor device of claim 12 , wherein the second SiGe fin comprises a compressive strain in a vertical direction of at least 1 Gpa.
17. The semiconductor device of claim 12 , further comprising:
an nFET and a pFET, the first SiGe fin comprising a fin of the nFET and the second SiGe fin comprising a fin of the pFET.
18. The semiconductor device of claim 12 , wherein the first and second diffusion regions comprise a bottom source/drain (S/D) region formed on the substrate, the first and second SiGe fins being formed on the bottom S/D region.
19. The semiconductor device of claim 18 , further comprising:
a bottom spacer formed on the bottom S/D region; and
a shallow trench isolation formed in the substrate between the first SiGe fin and the second SiGe fin, the bottom spacer being formed on the shallow trench isolation.
20. A semiconductor device comprising:
a first diffusion region having a first conductivity type formed on a substrate and including a first projecting portion;
a first SiGe fin formed on the first projecting portion of the first diffusion region and comprising a first amount of Ge; and
a second diffusion region having a second conductivity type formed on the substrate and including a second projecting portion;
a second SiGe fin formed on the second projecting portion of the second diffusion region and comprising:
a central portion comprising a second amount of Ge which is substantially equal to the first amount of Ge; and
a surface portion comprising a third amount of Ge which is greater than the second amount,
wherein a total width of the central portion and the surface portion is substantially equal to a width of the second projecting portion of the second diffusion region.