Trench capacitor layout structure and method of forming same background
A semiconductor structure includes a substrate having a trench array therein. The trench array includes a plurality of outer trenches adjacent to and extending along a periphery of the trench array and a plurality of inner trenches. Each of the plurality of outer trenches has a width greater than a width of each of the plurality of inner trenches. A capacitor material stack over the trench array.
1. A semiconductor structure, comprising:
a substrate having a trench array therein, wherein the trench array includes a plurality of outer trenches adjacent to and extending along a periphery of the trench array and a plurality of inner trenches, wherein each of the plurality of outer trenches has a width greater than a width of each of the plurality of inner trenches; and
a capacitor material stack over the trench array.
2. The semiconductor structure of claim 1 , wherein the width of each of the plurality of outer trenches is about 10% to about 20% greater than the width of each of the plurality of inner trenches.
3. The semiconductor structure of claim 1 , wherein the capacitor material stack comprises a lower capacitor electrode layer, a capacitor dielectric layer, and an upper capacitor electrode layer.
4. The semiconductor structure of claim 3 , wherein each of the lower capacitor electrode layer and the upper capacitor electrode layer comprises TiN.
5. The semiconductor structure of claim 3 , wherein the capacitor dielectric layer comprises silicon dioxide, silicon nitride, or a high-k dielectric material.
6. The semiconductor structure of claim 1 , wherein each of the plurality of outer trenches and the plurality of inner trenches has an aspect ratio ranging from about 20 to 1 to about 100 to 1.
7. The semiconductor structure of claim 1 , wherein each of the plurality of outer trenches and the plurality of inner trenches has a spacing from an adjacent trench of the trench array ranging from about 0.1 micrometer (μm) to 0.25 μm.
8. The semiconductor structure of claim 1 , wherein each of the plurality of inner trenches has a same width.
9. The semiconductor structure of claim 1 , wherein the trench array comprises:
at least one first group of trenches extending along a first direction, wherein the at least one first group of trenches comprises a first outer trench at a periphery of the at least one first group of trenches, and the first outer trench has a width greater than a width of a first inner trench adjacent to the first outer trench; and
at least one second group of trenches extending along a second direction different from the first direction, wherein the at least one second group of trenches comprises a second outer trench at a periphery of the at least one second group of trenches, and the second outer trench has a width greater than a width of a second inner trench adjacent to the second outer trench.
10. The semiconductor structure of claim 9 , wherein each trench of the at least one first group of trenches extends substantially parallel to one another, and each trench of the at least one second group of trenches extends substantially parallel to one another.
11. The semiconductor structure of claim 9 , wherein the second direction is perpendicular to the first direction.
12. The semiconductor structure of claim 9 , wherein one first group of trenches of the at least one first group of trenches is adjacent to one second group of trenches of the at least one second group of trenches along the first direction, and the one first group of trenches is adjacent to another second group of trenches of the at least one second group of trenches along the second direction.
13. The semiconductor structure of claim 1 , further comprising contact plugs contacting the capacitor material stack.
14. A semiconductor structure, comprising:
a substrate having a plurality of trench arrays therein; and
a plurality of capacitor material stacks, wherein the plurality of capacitor material stacks comprises:
a first capacitor material stack over a first trench array of the plurality of trench arrays, wherein the first trench array comprises a first outer trench adjacent to and extending along a periphery of the first trench array and a plurality of first inner trenches, the first outer trench has a width greater than a width of each of the plurality of first inner trenches, and
a second capacitor material stack over a second trench array of the plurality of trench arrays adjacent to the first trench array, wherein the second trench array comprises a second outer trench adjacent to and extending along a periphery of the second trench array and a plurality of second inner trenches, the second outer trench has a width greater than a width of each of the plurality of second inner trenches.
15. The semiconductor structure of claim 14 , wherein a spacing between the periphery of the first trench array and the periphery of the second trench array is from about 2 micrometer (μm) to about 5 μm.
16. The semiconductor structure of claim 14 , wherein the width of the first outer trench is about 10% to about 20% greater than the width of each of the plurality of first inner trenches.
17. The semiconductor structure of claim 14 , wherein the first trench array comprises:
a plurality of first groups of trenches extending along a first direction, wherein an outer trench of the plurality of first group of trenches, at a periphery of the plurality of first groups of trenches, has a width greater than a width of an inner trench of the plurality of first group of trenches, and
a plurality of second groups of trenches extending along a second direction different from the first direction, wherein an outer trench of the plurality of second group of trenches, at a periphery of the plurality of second groups of trenches, has a width greater than a width of an inner trench of the plurality of second group of trenches.
18. A semiconductor structure, comprising:
a substrate;
a first trench in the substrate;
a plurality of second trenches in the substrate, wherein the first trench is closer to an edge of the substrate than each of the plurality of second trenches, and a width of the first trench is different from a width of each of the plurality of second trenches; and
a capacitor material stack extending into the first trench and into each of the plurality of second trenches;
a first contact outside of the first trench and the plurality of second trenches, wherein the first contact is electrically connected to the capacitor material stack; and
a second contact outside the first trench and the plurality of second trenches, wherein the second contact is electrically connected to the capacitor material stack.
19. The semiconductor structure of claim 18 , wherein the first contact is on a first side of the plurality of second trenches, and the second contact is on a second side of the plurality of second trenches opposite the first side.
20. The semiconductor structure of claim 18 , wherein the capacitor material stack comprises:
a first electrode, wherein the first contact is electrically connected to the first electrode;
a dielectric layer on the first electrode; and
a second electrode on the dielectric layer, wherein the second contact is electrically connected to the second electrode.