Semiconductor device, inverter circuit, and vehicle
A semiconductor device according to embodiments described herein includes a p-type SiC layer, a gate electrode, and a gate insulating layer between the SiC layer and the gate electrode. The gate insulating layer includes a first layer, a second layer, a first region, and a second region. The second layer is between the first layer and the gate electrode and has a higher oxygen density than the first layer. The first region is provided across the first layer and the second layer, includes a first element from F, D, and H, and has a first concentration peak of the first element. The second region is provided in the first layer, includes a second element from Ge, B, Al, Ga, In, Be, Mg, Ca, Sr, Ba, Sc, Y, La, and lanthanoid, and has a second concentration peak of the second element and a third concentration peak of C.
1. A semiconductor device, comprising:
a p-type SiC layer;
a gate electrode; and
a gate insulating layer provided between the SiC layer and the gate electrode, the gate insulating layer including:
a first layer,
a second layer provided between the first layer and the gate electrode, the second layer having a lower oxygen density than the first layer,
a first region provided in the first layer, the first region including at least one first element selected from the group consisting of Mg (magnesium), Ca (calcium), Sr (strontium), Ba (barium), Sc (scandium), Y (yttrium), La (lantern), and lanthanoid (Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu) and the first region having a first concentration peak of the at least one first element, and
a second region provided in the second layer, the second region including at least one second element selected from the group consisting of N (nitrogen), P (phosphorus), As (arsenic), Sb (antimony), and Bi (bismuth) and the second region having a second concentration peak of the at least one second element and a third concentration peak of C (carbon), a distance between the second concentration peak and the third concentration peak being shorter than a distance between the first concentration peak and the third concentration peak.
2. The semiconductor device according to claim 1 , wherein a distance between the second concentration peak and the first concentration peak is equal to or less than 4 nm, and the distance between the first concentration peak and the third concentration peak is equal to or less than 4 nm.
3. The semiconductor device according to claim 1 , wherein full widths at half maximum of the first concentration peak and the second concentration peak are equal to or less than 1 nm.
4. The semiconductor device according to claim 1 , wherein a full width at half maximum of the third concentration peak is equal to or less than 1 nm.
5. The semiconductor device according to claim 1 , wherein the second layer is a silicone oxide film.
6. The semiconductor device according to claim 1 , wherein the first layer is a hafnium oxide film or a zirconium oxide film.
7. An inverter circuit comprising the semiconductor device according to claim 1 .
8. A vehicle comprising the semiconductor device according to claim 1 .