Variable resistance memory device and method of manufacturing the same
Disclosed are a variable resistance memory device and a method of manufacturing the same. The device comprises a first conductive line extending in a first direction, a second conductive line extending in a second direction intersecting the first direction, a memory cell at an intersection between the first conductive line and the second conductive line, a first electrode between the first conductive line and the memory cell, and a second electrode between the second conductive line and the memory cell. The memory cell comprises a switching pattern, an intermediate electrode, a first resistivity control pattern, and a variable resistance pattern that are connected in series between the first conductive line and the second conductive line. Resistivity of the first resistivity control pattern is less than resistivity of the second electrode.
1. A variable resistance memory device, comprising:
a first conductive line extending in a first direction;
a second conductive line extending in a second direction intersecting the first direction;
a memory cell at an intersection between the first conductive line and the second conductive line;
a first electrode between the first conductive line and the memory cell; and
a second electrode between the second conductive line and the memory cell,
wherein the memory cell comprises a switching pattern, an intermediate electrode, a first resistivity control pattern, and a variable resistance pattern that are connected in series between the first conductive line and the second conductive line, and
wherein a resistivity of the first resistivity control pattern is less than a resistivity of the second electrode.
2. The device of claim 1 , wherein the memory cell further comprises:
a second resistivity control pattern between the second electrode and the variable resistance pattern,
wherein a resistivity of the second resistivity control pattern is greater than the resistivity of the first resistivity control pattern.
3. The device of claim 2 , wherein the resistivity of the second resistivity control pattern is 10 to 500 times the resistivity of the first resistivity control pattern.
4. The device of claim 2 , wherein a width of the first resistivity control pattern and a width of the second resistivity control pattern are different from each other.
5. The device of claim 4 , wherein the width of the second resistivity control pattern is less than a width of the variable resistance pattern.
6. The device of claim 4 , wherein side surfaces of the first resistivity control pattern are aligned with side surfaces of the variable resistance pattern.
7. The device of claim 2 , wherein the second resistivity control pattern contacts the variable resistance pattern.
8. The device of claim 2 , wherein, when an electric current flows between the first electrode and the second electrode, heating occurs at an interface between the second resistivity control pattern and the variable resistance pattern.
9. The device of claim 1 , wherein a width of the first resistivity control pattern is less than a width of the variable resistance pattern.
10. The device of claim 1 , wherein the first resistivity control pattern contacts the intermediate electrode.
11. A variable resistance memory device, comprising:
a first conductive line extending in a first direction;
a second conductive line extending in a second direction perpendicular to the first direction and spaced apart from the first conductive line in a third direction;
a memory cell at an intersection between the first conductive line and the second conductive line;
a first electrode between the first conductive line and the memory cell; and
a second electrode between the second conductive line and the memory cell,
wherein the memory cell comprises, in order, a switching pattern, an intermediate electrode on the switching pattern, a first resistivity control pattern on the intermediate electrode, a variable resistance pattern on the first resistivity control pattern, and a second resistivity control pattern on the variable resistance pattern,
wherein a resistivity of the first resistivity control pattern is less than a resistivity of the second electrode, and
wherein a resistivity of the second resistivity control pattern is greater than the resistivity of the first resistivity control pattern.
12. The device of claim 11 , wherein a width of the first resistivity control pattern and a width of the second resistivity control pattern are different from each other.
13. The device of claim 11 , wherein a width of the first resistivity control pattern is less than a width of the variable resistance pattern.
14. A variable resistance memory device, comprising:
a first word line and a second word line that extend in a first direction;
a bit line between the first and second word lines and extending in a second direction intersecting the first direction;
a first memory cell at an intersection between the first word line and the bit line; and
a second memory cell at an intersection between the second word line and the bit line,
wherein the first memory cell comprises a first switching pattern, a first intermediate electrode, a first resistivity control pattern, a first variable resistance pattern, and a second resistivity control pattern that are arranged from the first word line to the bit line, and
wherein the second memory cell comprises in the following order: a second switching pattern, a second intermediate electrode, a third resistivity control pattern, a second variable resistance pattern, and a fourth resistivity control pattern that are arranged from the bit line to the second word line.
15. The device of claim 14 , wherein resistivity of the second resistivity control pattern is substantially the same as resistivity of the third resistivity control pattern,
wherein resistivity of the first resistivity control pattern is substantially the same as resistivity of the fourth resistivity control pattern, and
wherein the resistivities of the second and third resistivity control patterns are greater than the resistivities of the first and fourth resistivity control patterns.
16. The device of claim 15 , wherein widths of the second and third resistivity control patterns are less than widths of the first and second variable resistance patterns.
17. The device of claim 15 , wherein, when an electric current flows between the first intermediate electrode and the second intermediate electrode and between the first intermediate electrode and a third intermediate electrode, heating occurs at an interface between the second resistivity control pattern and the first variable resistance pattern and at an interface between the second variable resistance pattern and the third resistivity control pattern.
18. The device of claim 14 , wherein resistivity of the first resistivity control pattern is substantially the same as resistivity of the third resistivity control pattern,
wherein resistivity of the second resistivity control pattern is substantially the same as resistivity of the fourth resistivity control pattern, and
wherein the resistivities of the second and fourth resistivity control patterns are greater than the resistivities of the first and third resistivity control patterns.
19. The device of claim 18 , wherein widths of the second and fourth resistivity control patterns are less than widths of the first and second variable resistance patterns.
20. The device of claim 18 , wherein, when an electric current flows between the first intermediate electrode and the second intermediate electrode and between the first intermediate electrode and a third intermediate electrode, heating occurs at an interface between the second resistivity control pattern and the first variable resistance pattern and at an interface between the second variable resistance pattern and the fourth resistivity control pattern.