Method and device for polishing semiconductor wafer
A method includes: polishing a semiconductor wafer by a polishing device; measuring a form of the semiconductor wafer by a measuring device before a polished surface of the semiconductor wafer becomes hydrophilic; and setting polishing conditions for the polishing based on a measurement result of the form of the semiconductor wafer by a polishing condition setting unit.
1. A semiconductor wafer polishing method consisting of:
providing an organic acid solution;
polishing a semiconductor wafer;
immersing the semiconductor wafer in the organic acid solution after the semiconductor wafer is polished but before the semiconductor wafer is measured;
pulling up the semiconductor wafer from the organic acid solution before an immersion time of the immersing exceeds 60 minutes;
measuring a form of the semiconductor wafer by an optical sensor before a polished surface of the semiconductor wafer becomes hydrophilic; and
setting polishing conditions for the polishing based on a measurement result of the form of the semiconductor wafer, wherein
an organic acid in the organic acid solution comprises at least one of a citric acid, a formic acid, an acetic acid, a butyric acid, an oxalic acid, a malonic acid and a succinic acid.
2. The semiconductor wafer polishing method according to claim 1 , wherein the semiconductor wafer is pulled up at a speed of 100 mm/sec or less.
3. The semiconductor wafer polishing method according to claim 1 , wherein the semiconductor wafer is pulled up while kept in a posture with the polished surface of the semiconductor wafer being substantially orthogonal to a horizontal surface of the organic acid solution.
4. The semiconductor wafer polishing method according to claim 1 , wherein the concentration of the organic acid solution is provided to be within a range of 0.001 mass percent to 0.1 mass percent.