Technologies for inverting lithographic patterns and semiconductor devices including high aspect ratio structures

1. A method for forming a semiconductor device, comprising:

providing a first workpiece comprising a substrate, an etch stop layer on a surface of the substrate, and a blind hole extending through the etch stop layer and partially into the substrate;

forming a first hardmask material within the blind hole; and

forming a structure extending from the surface of the substrate beneath the first hardmask material, at least in part, by selectively removing regions of the etch stop layer proximate the first hardmask material and at least a portion of the substrate below the etch stop layer;

wherein the structure extending from the surface of the substrate is formed at a location of the blind hole.

2. The method of claim 1 , wherein forming the first hardmask material comprises:

depositing the first hardmask material on the first workpiece such that the first hardmask material is disposed on an upper surface of the etch stop layer and within the blind hole; and

removing at least a portion of the first hardmask material to expose the upper surface of the etch stop layer proximate the blind hole.

3. The method of claim 1 , wherein providing the first workpiece comprises:

forming a hole precursor in a second workpiece, the second workpiece comprising the substrate, the etch stop layer on the substrate, and a layer of second hard mask material on the etch stop layer, the hole precursor extending through the layer of second hard mask material to expose a portion of the etch stop layer within the hole precursor; and

forming the blind hole by selectively removing at least a portion of the etch stop layer exposed within the hole precursor and a portion of the substrate underlying the hole precursor.

4. The method of claim 3 , wherein forming the hole precursor comprises exposing the second workpiece to a first etching chemistry that is configured to selectively remove at least a portion of the layer of second hard mask material to expose the portion of the etch stop layer.

5. The method of claim 4 , wherein:

the second hardmask material comprises amorphous silicon;

the etch stop layer comprises an oxide; and

the first etching chemistry is configured to selectively etch amorphous silicon without or without substantially etching the oxide of the etch stop layer.

6. The method of claim 4 , wherein exposing the second workpiece to the first etching chemistry comprises exposing the workpiece to a mixture of hydrogen bromide and oxygen.

7. The method of claim 5 , wherein forming the blind hole comprises exposing the second workpiece to a second etching chemistry that is different from the first etching chemistry, the second etching chemistry configured to selectively remove at least a portion of the etch stop layer exposed within the hole precursor and a portion of the substrate underlying the hole precursor.

8. The method of claim 7 , wherein the second hardmask material is unaffected or substantially unaffected by the second etching chemistry.

9. The method of claim 8 , wherein:

the second hardmask material comprises amorphous silicon;

the etch stop layer comprises an oxide; and

the second etching chemistry is configured to selectively etch the oxide of the etch stop layer without or without substantially etching amorphous silicon.

10. The method of claim 9 , wherein exposing the second workpiece to the second etching chemistry comprises exposing the second workpiece to one or more carbon and fluorine containing etchants of the formula C x F y , wherein x is an integer ranging from 3 to 5 and y is an integer ranging from 6 to 8.

11. The method of claim 1 , wherein the blind hole and the structure extending from the surface of the substrate have a width ranging from greater than 0 to less than or equal to about 50 nanometers (nm).

12. The method of claim 1 , wherein the layer of first hardmask material comprises one or more of an oxide, carbide, or nitride.

13. The method of claim 3 , wherein the layer of second hardmask material is formed from amorphous silicon and the layer of first hardmask material is formed from an oxide, a carbide, or a nitride.

14. The method of claim 13 , wherein the layer of first hardmask material is formed from silicon carbide.