Silicon dry etching method
A silicon dry etching method of the invention, includes: preparing a silicon substrate; forming a mask pattern having an opening on the silicon substrate; forming a deposition layer on the silicon substrate in accordance with the mask pattern while introducing a first gas; carrying out a dry etching process with respect to the silicon substrate in accordance with the mask pattern while introducing a second gas, and thereby forming a recess pattern on a surface of the silicon substrate; and carrying out an ashing process with respect to the silicon substrate while introducing a third gas.
1. A silicon dry etching method, comprising:
preparing a silicon substrate;
forming a mask pattern having an opening pattern on the silicon substrate;
carrying out a deposition process of forming a deposition layer on the silicon substrate in accordance with the mask pattern while introducing a first gas;
carrying out a dry etching process with respect to the silicon substrate in accordance with the mask pattern while introducing a second gas, and thereby forming a recess pattern on a surface of the silicon substrate; and
carrying out an ashing process with respect to the silicon substrate while introducing a third gas, wherein
an adhering product made of the same material as that of the deposition layer adhered to an inner edge of the opening pattern of the mask pattern is removed in the ashing process,
the ashing process is carried out after the dry etching process,
the deposition process and the dry etching process are repetitively carried out,
the ashing process is carried out before the deposition process, and
the silicon dry etching method forms recess patterns having aspect ratios different from each other on the surface of the silicon substrate without a difference in etching rate.
2. The silicon dry etching method according to claim 1 , wherein
the ashing process, the deposition process and the dry etching process are carried out in the same chamber.
3. The silicon dry etching method according to claim 1 , wherein
the third gas used in the ashing process includes an oxygen gas.
4. The silicon dry etching method according to claim 3 , wherein
the mask pattern is a mask pattern formed of a hard mask not removed by the ashing process.
5. The silicon dry etching method according to claim 1 , wherein
the first gas used in the deposition process includes fluorocarbon.
6. The silicon dry etching method according to claim 1 , wherein
the second gas used in the dry etching process includes sulfur fluoride.
7. The silicon dry etching method according to claim 6 , wherein
the second gas used in the dry etching process includes at least one selected from the group consisting of oxygen and silicon fluoride.
8. The silicon dry etching method according to claim 1 , wherein
anisotropic plasma processing having anisotropy in a direction in which the recess pattern is formed is carried out on the surface of the silicon substrate in the dry etching process, the ashing process, and the deposition process.
9. The silicon dry etching method according to claim 8 , wherein
the anisotropic plasma processing is carried out by generating inductively-coupled plasma by applying alternating voltages of frequencies different from each other for a center region and a peripheral edge region of the surface of the silicon substrate to electrodes disposed to face the silicon substrate in the anisotropic plasma processing.
10. The silicon dry etching method according to claim 9 , wherein
a frequency of the alternating voltage applied to the peripheral edge region of the surface of the silicon substrate is set lower than a frequency of the alternating voltage applied to the center region of the surface of the silicon substrate in the anisotropic plasma processing.
11. The silicon dry etching method according to claim 9 , wherein
plasma generation power applied to the center region of the surface of the silicon substrate in the ashing process and the dry etching process is set lower than or equal to plasma generation power applied to the center region of the surface of the silicon substrate in the deposition process.
12. The silicon dry etching method according to claim 9 , wherein
plasma generation power applied to the center region of the surface of the silicon substrate is set lower than or equal to plasma generation power applied to the peripheral edge region of the surface of the silicon substrate in the deposition process, the ashing process, and the dry etching process.
13. The silicon dry etching method according to claim 9 , wherein
bias power is applied to the silicon substrate in the ashing process and the dry etching process, and
the bias power applied to the silicon substrate in the dry etching process is set lower than or equal to the bias power applied to the silicon substrate in the ashing process.
14. The silicon dry etching method according to claim 9 , wherein
a pressure in an atmosphere in which the ashing process is carried out is set higher than or equal to a pressure in an atmosphere in which the deposition process is carried out.
15. The silicon dry etching method according to claim 9 , wherein
a pressure in an atmosphere in which the dry etching process is carried out is set higher than or equal to a pressure in an atmosphere in which the deposition process is carried out.
16. The silicon dry etching method according to claim 9 , further comprising
preparing a plasma-processing apparatus including:
a chamber that includes an upper lid having a center region and carries out a plasma processing with respect to a target object in an internal space capable of reducing a pressure thereof;
a first electrode disposed in the chamber, the target object being to be mounted on the first electrode;
a first high-frequency power source that applies a bias voltage having a first frequency λ 1 to the first electrode;
a spiral shaped second electrode disposed outside the chamber, is located at an opposite side of the first electrode with respect to the upper lid, and is disposed on the center region;
a spiral shaped third electrode disposed outside the chamber, is located at an opposite side of the first electrode with respect to the upper lid, and is disposed at an outer-periphery of the second electrode;
a second high-frequency power source that applies an alternating voltage having a second frequency λ 2 to the second electrode;
a third high-frequency power source that applies an alternating voltage having a third frequency λ 3 to the third electrode;
a gas introduction device that introduces a processing gas including fluorine into an inside of the chamber; and
a solid source located between the upper lid and the first electrode in the chamber, is disposed close to the upper lid than the first electrode, and is used in sputtering, wherein
when the anisotropic plasma processing is carried out, in the case in which the second frequency λ 2 and the third frequency λ 3 are in relationship of λ 2 >λ 3 ,
the gas introduction device is disposed at the center region of the upper lid.
17. The silicon dry etching method according to claim 1 , wherein
the recess patterns formed on the silicon substrate includes a first bottom portion and a second bottom portion,
the mask pattern has a first opening pattern and a second opening pattern as the opening pattern,
the first opening pattern has a large diameter,
the second opening pattern has a small diameter smaller than that of the first opening pattern,
the first bottom portion corresponds to the first opening pattern,
the second bottom portion corresponds to the second opening pattern, and
a film thickness of the deposition layer formed by the deposition process is controlled in accordance with an etching depth and an aspect ratio of the opening pattern of the mask pattern such that a film thickness of the deposition layer formed on the first bottom portion becomes larger than a film thickness of the deposition layer formed on the second bottom portion.
18. A silicon dry etching method, comprising:
preparing a silicon substrate;
forming a mask pattern having an opening pattern on the silicon substrate;
carrying out a deposition process of forming a deposition layer on the silicon substrate in accordance with the mask pattern while introducing a first gas;
carrying out a dry etching process with respect to the silicon substrate in accordance with the mask pattern while introducing a second gas, and thereby forming a recess pattern on a surface of the silicon substrate; and
carrying out an ashing process with respect to the silicon substrate while introducing a third gas, wherein
the third gas used in the ashing process includes an oxygen gas,
anisotropic plasma processing having anisotropy in a direction in which the recess pattern is formed is carried out on the surface of the silicon substrate in the ashing process,
the anisotropic plasma processing is carried out by generating inductively-coupled plasma by applying alternating voltages of frequencies different from each other for a center region and a peripheral edge region of the surface of the silicon substrate to electrodes disposed to face the silicon substrate in the anisotropic plasma processing,
plasma generation power applied to the center region of the surface of the silicon substrate in the ashing process and the dry etching process is set lower than or equal to plasma generation power applied to the center region of the surface of the silicon substrate in the deposition process, and
the silicon dry etching method forms recess patterns having aspect ratios different from each other on the surface of the silicon substrate without a difference in etching rate.
19. The silicon dry etching method according to claim 18 , wherein
the recess patterns formed on the silicon substrate includes a first bottom portion and a second bottom portion,
the mask pattern has a first opening pattern and a second opening pattern as the opening pattern,
the first opening pattern has a large diameter,
the second opening pattern has a small diameter smaller than that of the first opening pattern,
the first bottom portion corresponds to the first opening pattern,
the second bottom portion corresponds to the second opening pattern, and
a film thickness of the deposition layer formed by the deposition process is controlled in accordance with an etching depth and an aspect ratio of the opening pattern of the mask pattern such that a film thickness of the deposition layer formed on the first bottom portion becomes larger than a film thickness of the deposition layer formed on the second bottom portion.