Method of patterning a low-k dielectric film
Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.
1. An etch chamber, comprising:
a first plasma stage in a lower location of the etch chamber, the first plasma stage for generating a nitrogen-free plasma in a first location of the etch chamber;
a showerhead in a location of the etch chamber above the lower location of the first plasma stage;
a second plasma stage in an upper location of the etch chamber above the location of the showerhead above the first plasma stage, the second plasma stage for generating a remote plasma;
a gas inlet device coupled to an NF 3 source gas, an O 2 source gas, and an N 2 source gas; and
a computing device configured to control the gas inlet device to repeatedly cycle between only providing generation of the remote plasma based on a combination of NF 3 /O 2 /N 2 in the upper location of the etch chamber, and only providing the nitrogen-free plasma in the lower location of the etch chamber, the repeatedly cycling performed during a single pass of a single wafer in the etch chamber.
2. The etch chamber of claim 1 , wherein the first plasma stage is for modifying exposed portions of a low-k dielectric layer with the nitrogen-free plasma.
3. The etch chamber of claim 2 , wherein the second plasma stage is for removing the modified portions of the low-k dielectric layer with the remote plasma.
4. The etch chamber of claim 3 , wherein the second plasma stage is further for removing a protection layer with the remote plasma process.
5. The etch chamber of claim 1 , wherein the second plasma stage is for removing modified portions of a low-k dielectric layer with the remote plasma.
6. The etch chamber of claim 1 , wherein the nitrogen-free plasma comprises a plasma based on a combination of Ar, SiF 4 and O 2 .
7. The etch chamber of claim 1 , wherein the first plasma stage is further for performing a deposition process.
8. The etch chamber of claim 7 , wherein the first plasma stage is further for removing material formed from the deposition process.
9. An etch chamber, comprising:
a first plasma stage in a lower location of the etch chamber, the first plasma stage for generating a nitrogen-free plasma in a first location of the etch chamber;
a showerhead in a location of the etch chamber above the lower location of the first plasma stage;
a second plasma stage in an upper location of the etch chamber above the location of the showerhead above the first plasma stage, the second plasma stage for generating a remote plasma;
a gas inlet device coupled to a CF 4 source gas, an O 2 source gas, and an N 2 source gas; and
a computing device configured to control the gas inlet device to repeatedly cycle between only providing generation of the remote plasma based on a combination of CF 4 /O 2 /N 2 in the upper location of the etch chamber, and only providing the nitrogen-free plasma in the lower location of the etch chamber, the repeatedly cycling performed during a single pass of a single wafer in the etch chamber.
10. The etch chamber of claim 9 , wherein the first plasma stage is for modifying exposed portions of a low-k dielectric layer with the nitrogen-free plasma.
11. The etch chamber of claim 10 , wherein the second plasma stage is for removing the modified portions of the low-k dielectric layer with the remote plasma.
12. The etch chamber of claim 11 , wherein the second plasma stage is further for removing a protection layer with the remote plasma process.
13. The etch chamber of claim 9 , wherein the second plasma stage is for removing modified portions of a low-k dielectric layer with the remote plasma.
14. The etch chamber of claim 9 , wherein the nitrogen-free plasma comprises a plasma based on a combination of Ar, SiF 4 and O 2 .
15. An etch chamber, comprising:
a first plasma stage in a lower location of the etch chamber, the first plasma stage for generating a nitrogen-free plasma in a first location of the etch chamber;
a showerhead in a location of the etch chamber above the lower location of the first plasma stage;
a second plasma stage in an upper location of the etch chamber above the location of the showerhead above the first plasma stage, the second plasma stage for generating a remote plasma;
a gas inlet device coupled to an NF 3 source gas, and an NH 3 source gas; and
a computing device configured to control the gas inlet device to repeatedly cycle between only providing generation of the remote plasma based on a combination of NF 3 /NH 3 in the upper location of the etch chamber, and only providing the nitrogen-free plasma in the lower location of the etch chamber, the repeatedly cycling performed during a single pass of a single wafer in the etch chamber.
16. The etch chamber of claim 15 , wherein the first plasma stage is for modifying exposed portions of a low-k dielectric layer with the nitrogen-free plasma.
17. The etch chamber of claim 15 , wherein the second plasma stage is for removing the modified portions of the low-k dielectric layer with the remote plasma.
18. The etch chamber of claim 17 , wherein the second plasma stage is further for removing a protection layer with the remote plasma process.
19. The etch chamber of claim 15 , wherein the second plasma stage is for removing modified portions of a low-k dielectric layer with the remote plasma.
20. The etch chamber of claim 15 , wherein the nitrogen-free plasma comprises a plasma based on a combination of Ar, SiF 4 and O 2 .