Etching method
The present disclosure relates to an etching method including: a first step of forming an etching assistance layer on a surface of at least one of a plurality of silicon-containing regions by plasma of a processing gas generated in a processing container; and a second step of imparting energy to the etching assistance layer. The energy is equal to or greater than energy at which the etching assistance layer is removed, and smaller than energy at which a region located immediately below the etching assistance layer is sputtered, and a sequence including the first step and the second step is executed repeatedly.
1. A method of selectively etching, the method comprising:
providing a workpiece in a processing chamber, wherein the workpiece includes a surface which includes a first region including a first material and a second region including a second material, with the first material including SiC or SiN, and the second material including a silicon-containing material different from that of the first material;
a first step of forming an etching assistance layer on the surface of at least one of the first and second regions by plasma generated from a processing gas in the processing container; and
a second step of removing the etching assistance layer by imparting energy to the etching assistance layer to selectively etch the first region including the first material such that the first material is etched at an etch rate greater than the second region including the second material,
wherein the energy is equal to or greater than energy at which the etching assistance layer is removed, and smaller than energy at which a region located immediately below the etching assistance layer is sputtered, and
a sequence including the first step and the second step is executed repeatedly.
2. The method of claim 1 , wherein the second material comprises a silicon oxide, and the processing gas comprises a halogen-containing gas or a mixture of a halogen-containing gas and an oxygen-containing gas.
3. The method of claim 2 , wherein
the oxygen-containing gas is O 2 , CO, COS, or CO 2 , and
the halogen-containing gas is Cl 2 , HBr, NF 3 , C x H y F z , or C x F y (where x, y, and z are natural numbers).
4. The method of claim 1 , wherein the first material comprises a silicon nitride, and the second material comprises a silicon carbide, and the processing gas comprises a halogen-containing gas.
5. The method of claim 4 , wherein the halogen-containing gas is Cl 2 , HBr, NF 3 , C x H y F z , or C x F y (where x, y, and z are natural numbers).
6. The method of claim 1 , wherein the first material comprises a silicon carbide and the second material comprises a silicon nitride, and the processing gas comprises a halogen-containing gas.
7. The method of claim 6 , wherein the halogen-containing gas is Cl 2 , HBr, NF 3 , C x H y F z , or C x F y (where x, y, and z are natural numbers).
8. The etching method of claim 1 , further comprising:
the providing the workpiece in the processing chamber includes holding the workpiece on a lower electrode,
in the first step, a first frequency bias power is not applied to the lower electrode, and
in the second step, the first frequency bias power is applied to the lower electrode.
9. The etching method of claim 1 , wherein the processing gas includes at least one gas selected from a group consisting of a carbon-containing gas, an oxygen-containing gas, a nitrogen-containing gas, a halogen-containing gas, and a hydrogen-containing gas.
10. The etching method of claim 1 , wherein plasma is generated from a halogen-containing gas as the processing gas in the first step, and plasma is generated from Ar gas and additionally an oxygen-containing gas in the second step.
11. The etching method of claim 10 , wherein the first material of the first region includes silicon carbide.
12. The etching method of claim 1 , further comprising a pretreatment step of generating plasma from an oxygen-containing gas and an inert gas before the first step, and exposing the workpiece to the plasma.
13. The etching method of claim 12 , wherein at least one region of the substrate includes silicon carbide, and an etching rate of silicon carbide obtained when the pretreatment is performed is less than one tenth of an etching rate obtained when the pretreatment is not performed.
14. The etching method of claim 1 , wherein the etching assistance layer is a deposition layer having a thickness of 0.1 nm to 1 nm.
15. The etching method of claim 1 , wherein in the second step, energy imparted to the workpiece is equal to or greater than energy at which the etching assistance layer is removed, and smaller than energy at which a region located immediately below the etching assistance layer is sputtered.
16. The method of claim 1 , wherein in the first step and the second step, a pressure in the processing container is maintained to 10 mTorr to 50 mTorr.
17. The method of claim 1 , wherein an etching mask is not provided on the first region or the second region.
18. The etching method of claim 1 , wherein an etching amount per sequence is less than 1 nm.
19. The method of claim 1 , wherein plasma is generated from a halogen-containing gas as the processing gas in the first step, and plasma is generated from an inert gas and an oxygen-containing gas in the second step; and
wherein the first material of first region includes silicon carbide, and the second material of the second region includes at least one of silicon nitride or silicon oxide.
20. The method of claim 1 , wherein plasma is generated from a halogen-containing gas in the first step, and plasma is generated from an inert gas which does not contain oxygen in the second step; and
wherein the first material of the first region includes silicon nitride, and the second material of the second region includes at least one of silicon carbide or silicon oxide.