LED with emitted light confined to fewer than ten transverse modes
A light emitting device includes a substrate, a buffer layer, a first active layer, and a plurality of mesa regions. A portion of the first active layer includes a first electrical polarity. The plurality of mesa regions includes at least a portion of the first active layer, a light emitting region on the portion of the first active layer, and a second active layer on the light emitting region. A portion of the second active layer includes a second electrical polarity. The light emitting region is configured to emit light which has a target wavelength between 200 nm to 300 nm. A thickness of the light emitting region is a multiple of the target wavelength, and a dimension of the light emitting region parallel to the substrate is smaller than 10 times the target wavelength, such that the emitted light is confined to fewer than 10 transverse modes.
1. A light emitting device comprising:
a substrate;
a buffer layer on the substrate;
a first active layer on the buffer layer, at least a first portion of the first active layer comprising a first electrical polarity; and
a plurality of mesa regions on the first active layer, wherein each mesa region comprises:
at least a second portion of the first active layer;
a light emitting region on the second portion of the first active layer, the light emitting region having a thickness and being configured to emit light, the emitted light having a target wavelength, the light emitting region having at least one dimension parallel to the substrate smaller than 10 times the target wavelength, the emitted light being confined to fewer than 10 transverse modes, the thickness of the light emitting region being a multiple of the target wavelength, and the target wavelength being between 200 nm and 300 nm; and
a second active layer on the light emitting region, at least a portion of the second active layer comprising a second electrical polarity.
2. The light emitting device of claim 1 , wherein each mesa region has a shape selected from the group consisting of a rectangular prism, a hexagonal prism, a cylinder, and an elliptic cylinder.
3. The light emitting device of claim 1 , wherein the light emitting region comprises a short-period superlattice.
4. The light emitting device of claim 3 , wherein the short-period superlattice comprises Al x Ga 1-x N wherein x is from 0 to 1.
5. The light emitting device of claim 1 , wherein the light emitting region comprises one or more quantum wells and one or more barriers adjacent to the quantum wells.
6. The light emitting device of claim 5 , wherein the one or more quantum wells comprises Al x Ga 1-x N wherein x is from 0 to 1.
7. The light emitting device of claim 1 , further comprising an electron blocking layer between the light emitting region and the second active layer.
8. The light emitting device of claim 1 , wherein the emitted light is non-coherent, the emitted light intensity comprises a wavelength from 200 nm to 300 nm, and the light emitting device comprises a total output power from 0.1 mW to 1 W.
9. The light emitting device of claim 1 , wherein the emitted light is coherent, the emitted light intensity comprises a wavelength from 200 nm to 300 nm, and the light emitting device comprises a total electrical-to-optical power efficiency from 0.1% to 90%.