III-nitride semiconuctor devices having a boron nitride alloy contact layer and method of production
A method for forming a III-nitride semiconductor device involves determining work functions of a first III-nitride contact layer and a first metal contact. The determined work function of the first III-nitride contact layer is based on a group III element of the first III-nitride contact layer. Based on the determined work functions of the first III-nitride contact layer and of the first metal contact, it is determined that the work function of the first III-nitride contact layer should be adjusted. The III-nitride semiconductor device is formed including the first III-nitride contact layer adjacent to a second III-nitride contact layer, the first metal contact arranged on the first III-nitride contact layer, and a second metal contact arranged on the second III-nitride contact layer. The first III-nitride contact layer of the formed III-nitride semiconductor device is a boron nitride alloy having an amount of boron that adjusts the work function of the first III-nitride contact layer relative to the determined work function of the first metal layer based on the group III element of the first III-nitride contact layer.
1 . A method for making a III-nitride semiconductor device, the method comprising:
determining work functions of (1) a first III-nitride contact layer having an initial composition and (2) a metal, wherein the determined work function of the first III-nitride contact layer is based on the initial composition of the first III-nitride contact layer;
determining, based on the determined work functions of the first III-nitride contact layer having the initial composition and of the metal, that a Schottky contact is formed between the first III-nitride contact layer having the initial composition and the metal;
determining an adjusted composition for the first III-nitride contact layer so that a contact barrier between (1) a first III-nitride contact layer having the adjusted composition and (2) the metal is reduced relative to a contact barrier between (3) the first III-nitride contact layer having the initial composition and (4) the metal, wherein the adjusted composition includes an amount of boron that increases the work function of the first III-nitride contact layer having the initial composition when the first III-nitride contact layer is n-type doped, and decreases the work function of the first III-nitride contact layer having the initial composition when the first III-nitride contact layer is p-type doped; and
making the III-nitride semiconductor device comprising the first III-nitride contact layer having the adjusted composition, adjacent to a second III-nitride contact layer, a first metal contact, comprising the metal, arranged on the first III-nitride contact layer having the adjusted composition, and a second metal contact arranged on the second III-nitride contact layer,
wherein the made III-nitride semiconductor device includes at least 0.1% boron in the first III-nitride contact layer having the adjusted composition,
wherein the made III-nitride semiconductor device includes at least 0.1% of a group III element in the first III-nitride contact layer having the adjusted composition, and
wherein the group III element is one of Al, Ga, and In.
2 . The method of claim 1 , further comprising:
determining a work function of the second III-nitride contact layer having an initial composition and a work function of the second metal contact;
determining, based on the determined work functions of the second III-nitride contact layer having the initial composition and of the second metal contact, that a Schottky contact would be formed between the second III-nitride contact layer and the second metal contact; and
determining an adjusted composition for the second III-nitride contact layer, wherein the adjusted composition includes an amount of boron that adjusts the work function of the second III-nitride contact layer having the initial composition.
3 . The method of claim 2 , wherein the second III-nitride contact layer having the initial composition comprises one or more of gallium, indium, or aluminum.
4 . The method of claim 1 , wherein the first III-nitride contact layer having the initial composition comprises one or more of gallium, indium, or aluminum.
5 . The method of claim 1 , wherein the formation of the III-nitride semiconductor device further comprises:
forming a semiconductor layer between the first III-nitride contact layer having the adjusted composition and the second III-nitride contact layer.
6 . The method of claim 1 , wherein the formation of the III-nitride semiconductor device further comprises:
forming a heterojunction of two semiconductor layers between the first III-nitride contact layer having the adjusted composition and the second III-nitride contact layer.
7 . The method of claim 1 , wherein
an ohmic contact is formed between the formed first III-nitride contact layer having the adjusted composition and the formed first metal contact.
8 . The method of claim 2 , wherein
an ohmic contact is formed between the formed second III-nitride contact layer having the adjusted composition and the formed second metal contact.
9 . The method of claim 1 , wherein the semiconductor device is a p-n diode, the first III-nitride contact layer having the adjusted composition comprises boron aluminum nitride, and the second III-nitride contact layer comprises aluminum gallium nitride.
10 . The method of claim 9 , wherein the first III-nitride contact layer having the adjusted composition comprises B 0.14 Al 0.86 N.