IP Library Granted Patent US 10,559,505
Granted Patent B2
US 10,559,505 · App. 15/112,940 · Granted Feb 11, 2020

Protective film-forming film, sheet for forming protective film, complex sheet for forming protective film, and inspection method

Inventors: Daisuke Yamamoto (Kawaguchi, JP); Hiroyuki Yoneyama (Nagareyama, JP)
Assignee: Lintec Corporation
H01L22/12C09J7/00H01L22/30H01L23/295C09J133/10C09J2201/36C09J2201/606C09J2203/326C09J2205/102C09J2205/114C09J2433/00C09J2463/00
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Quick Facts
Patent No.
US 10,559,505
App. No.
15/112,940
Granted
Feb 11, 2020
Kind
B2
Abstract

Provided is a sheet ( 2 ) for forming protective film, including: a protective film-forming film ( 1 ) characterized in that the light transmittance thereof at a wavelength of 1600 nm of 72% or more, and the light transmittance thereof at a wavelength of 550 nm of 20% or less; and a release sheet ( 21 ) laminated upon one or both faces of the protective film-forming film ( 1 ). According to this sheet ( 2 ) for forming a protective film, it is possible to form a protective film that allows for the inspection of cracks, etc., on a workpiece or a product obtained by processing the workpiece, while preventing grinding marks on the workpiece or the product from being visible to the naked eye.

Claims (22)

1. An inspection method comprising: adhering a protective film-forming film to a semiconductor wafer; curing the protective film-forming film to obtain a semiconductor wafer provided with a protective film; and, irradiating infrared rays to the semiconductor wafer provided with the protective film or a semiconductor chip obtained by processing the semiconductor wafer provided with the protective film, to inspect presence of cracks which cannot be detected by visual observation in the semiconductor wafer provided with the protective film or the semiconductor chip provided with the protective film; wherein the light transmittance at a wavelength of 1600 nm of the protective film-forming film is 72% or greater, and the light transmittance at a wavelength of 550 nm of the protective film-forming film is 20% or less.

2. The inspection method according to claim 1 ,

wherein the protective film-forming film comprises a colorant and a filler having an average particle diameter of 0.01 to 3 μm.

3. An inspection method comprising:

laminating a release sheet on one or both surfaces of a protective film-forming film to obtain a sheet for forming a protective film,

adhering the sheet for forming a protective film to a semiconductor wafer,

curing the protective film-forming film to obtain a semiconductor wafer provided with a protective film; and

irradiating infrared rays to the semiconductor wafer provided with the protective film or a semiconductor chip obtained by processing the semiconductor wafer provided with the protective film, to inspect presence of cracks which cannot be detected by visual observation in the semiconductor wafer provided with the protective film or the semiconductor chip provided with the protective film;

wherein the light transmittance at a wavelength of 1600 nm of the protective film-forming film is 72% or greater, and

the light transmittance at a wavelength of 550 nm of the protective film-forming film is 20% or less.

4. The inspection method according to claim 3 ,

wherein the protective film-forming film comprises a colorant and a filler having an average particle diameter of 0.01 to 3 μm.

5. An inspection method comprising:

laminating an adhesive sheet on a pressure sensitive adhesive layer on one surface side of a base material,

laminating a protective film-forming film on the pressure sensitive adhesive layer side of the adhesive sheet to obtain a composite sheet for forming a protective film,

adhering the composite sheet for forming a protective film to a semiconductor wafer,

curing the protective film-forming film to obtain a semiconductor wafer provided with a protective film; and

irradiating infrared rays to the semiconductor wafer provided with the protective film or a semiconductor chip obtained by processing the semiconductor wafer provided with the protective film, to inspect presence of cracks which cannot be detected by visual observation in the semiconductor wafer provided with the protective film or the semiconductor chip provided with the protective film;

wherein the light transmittance at a wavelength of 1600 nm of the protective film-forming film is 72% or greater, and

the light transmittance at a wavelength of 550 nm of the protective film-forming film is 20% or less.

6. The inspection method according to claim 5 ,

wherein the protective film-forming film comprises a colorant and a filler having an average particle diameter of 0.01 to 3 μm.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 29, 2016
From: YAMAMOTO, DAISUKE; YONEYAMA, HIROYUKI
To: LINTEC CORPORATION
Reel/Frame 039287/0127 →
Priority Claims (1)
JP 2014-009243 · Jan 22, 2014 · national
Continuity (1)
Related Publication 20170005016A1 · Jan 5, 2017
Cited By (2)
US 12,439,806 US 12,543,418