Multi-layer leadless semiconductor package and method of manufacturing the same

1. A method of forming a semiconductor package comprising:

forming a multi-layer buildup package substrate prepared with top and bottom surfaces, wherein the multi-layer buildup package substrate is built up and comprises interconnect structures, and wherein the top surface of the multi-layer buildup package substrate comprises a planar multi-layer buildup package substrate top surface, wherein the multi-layer buildup package substrate top surface comprises a die attach region with a semiconductor die disposed thereon and a non-die attach region being coplanar with the die attach region, the non-die attach region being outside the die attach region, bond pads being disposed in the non-die attach region, wherein forming the multi-layer buildup package substrate comprises:

forming a lowermost line level over a base carrier, wherein forming the lowermost line level includes forming lowermost conductive elements which serve as terminal pads,

forming a first via level over the lowermost line level, the first via level comprises first via contacts which serve as vertical connections of the interconnect structures,

forming a plurality of intermediate line levels over the first via level, each of the plurality of intermediate line levels includes intermediate conductive elements and is separated by an intermediate via level which includes intermediate via contacts,

forming a top via level over the plurality of intermediate line levels, the top via level comprises top via contacts, and

forming an uppermost line level over the top via level, the uppermost line level includes uppermost conductive elements which serve as the bond pads;

attaching a semiconductor die on the die attach region of the planar multi-layer buildup package substrate top surface, wherein the semiconductor die is connected to the interconnect structures;

removing the base carrier to expose the terminal pads; and

forming a plurality of bottom conductive elements on the bottom surface of the multilayer buildup package substrate, the plurality of bottom conductive elements are connected to the terminal pads and serve as package contacts, wherein the plurality of bottom conductive elements are connected to the interconnect structures of the multi-layer buildup package substrate.

2. The method of claim 1 , wherein the semiconductor die comprises:

semiconductor die pads on a top surface of the semiconductor die; and

further comprises coupling the semiconductor die pads to the bond pads via wire bonds.

3. The method of claim 2 , wherein forming the device further comprises:

forming a dielectric layer over the top surface of the multi-layer buildup package substrate, the dielectric layer encapsulates the semiconductor die, the wire bonds and the top surface of the multi-layer buildup package substrate.

4. A method of forming a semiconductor package comprising:

forming a multi-layer buildup package substrate prepared with top and bottom surfaces, wherein the multi-layer buildup package substrate is built up and comprises interconnect structures, and wherein the top surface of the multi-layer buildup package substrate comprises a planar multi-layer buildup package substrate top surface, wherein the multi-layer buildup package substrate top surface comprises a die attach region with a semiconductor die disposed thereon and a non-die attach region being coplanar with the die attach region, the non-die attach region being outside the die attach region, bond pads being disposed in the non-die attach region, wherein forming the multi-layer buildup package substrate comprises

forming a lowermost line level over a base carrier, wherein forming the lowermost line level includes forming lowermost conductive elements which serve as terminal pads,

forming a first via level over the lowermost line level, the first via level comprises first via contacts which serve as vertical connections of the interconnect structures,

forming an intermediate line level over the first via level, wherein the intermediate line level includes intermediate conductive elements coupled to the first via contacts,

forming a top via level over the intermediate line level, the top via level comprises top via contacts, and

forming an uppermost line level over the top via level, the uppermost line level includes uppermost conductive elements which serve as the bond pads;

attaching a semiconductor die on the die attach region of the planar multi-layer buildup package substrate top surface, wherein the semiconductor die is connected to the interconnect structures;

removing the base carrier to expose the terminal pads; and

forming a plurality of bottom conductive elements on the bottom surface of the multi-layer buildup package substrate, the plurality of bottom conductive elements are connected to the terminal pads and serve as package contacts, wherein the plurality of bottom conductive elements are connected to the interconnect structures of the multi-layer buildup package substrate.

5. The method of claim 4 , wherein the semiconductor die comprises:

semiconductor die pads on a top surface of the semiconductor die; and

further comprises coupling the semiconductor die pads to the bond pads via wire bonds.

6. The method of claim 5 , wherein forming the device further comprises:

forming a dielectric layer over the top surface of the multi-layer build-up package substrate, the dielectric layer encapsulates the semiconductor die, the wire bonds and the top surface of the multi-layer buildup package substrate.

7. A method of forming a semiconductor package comprising:

forming a multi-layer buildup package substrate prepared with top and bottom surfaces, wherein the multi-layer buildup package substrate is built up, and wherein the top surface of the multi-layer buildup package substrate comprises a planar multi-layer buildup package substrate top surface, wherein the multi-layer buildup package substrate top surface comprises a die attach region with a semiconductor die disposed thereon and a non-die attach region being coplanar with the die attach region, the non-die attach region being outside the die attach region, bond pads being disposed in the non-die attach region, wherein the multi-layer build up package comprises

a lowermost line level over a base carrier, the lowermost line level includes forming lowermost conductive elements, wherein the lowermost conductive elements serve as terminal pads,

an intermediate line level over the lowermost line level, the intermediate line level includes intermediate conductive elements, and

an uppermost line level over the intermediate line level, the uppermost line level includes uppermost conductive elements, wherein the uppermost conductive elements serve as the bond pads, and where each line level is separated by a via level which includes via contacts, the via contacts couple the lowermost, intermediate and uppermost conductive elements to form interconnect structures;

attaching a semiconductor die on the die attach region of the planar multi-layer buildup package top surface, wherein the semiconductor die is connected to the interconnect structures;

removing the base carrier to expose the terminal pads; and

forming a plurality of bottom conductive elements connected to the terminal pads, the plurality of bottom conductive elements serve as package contacts.

8. The method of claim 7 , wherein the semiconductor die comprises:

semiconductor die pads on a top die surface; and

further comprises coupling the semiconductor die pads to the bond pads via wire bonds.

9. A method of forming a semiconductor package comprising:

providing a base carrier;

performing a printing process to form a package substrate, wherein forming the package substrate comprises

printing a first discontinuous conductive layer directly on a top surface of the base carrier, the first discontinuous conductive layer comprising a conductive material separated by gaps which expose portions of the top surface of the base carrier, wherein the conductive material of the first discontinuous conductive layer forms terminal pads of the package substrate,

printing a first discontinuous dielectric layer on the base carrier, wherein the first discontinuous dielectric layer fills the gaps in the first discontinuous conductive layer and partially covers a top surface of the terminal pads, the first discontinuous dielectric layer comprising gaps which expose a portion of the top surface of the terminal pads,

printing a second discontinuous conductive layer, the second discontinuous conductive layer comprising a conductive material which fills the gaps in the first discontinuous dielectric layer and partially covers a top surface of the first discontinuous dielectric layer, wherein the second discontinuous conductive layer comprises gaps which expose portions of the top surface of the first discontinuous dielectric layer,

printing a last discontinuous dielectric layer to form a top surface of the package substrate, and

printing a last discontinuous conductive layer, the last discontinuous conductive layer filling gaps in the last discontinuous dielectric layer, and wherein the top surface of the package substrate comprises a planar package substrate top surface, wherein the planar package substrate top surface comprises a die attach region with a semiconductor die disposed thereon and a non-die attach region being coplanar with the die attach region, the non-die attach region being outside the die attach region, bond pads being disposed in the non-die attach region; and

attaching a semiconductor die on the die attach region of the planar package substrate top surface.

10. The method of claim 9 wherein the second discontinuous conductive layer forms via contacts disposed in the gaps in the first discontinuous dielectric layer and conductive traces disposed over and partially covering the top surface of the first discontinuous dielectric layer.

11. The method of claim 10 wherein the printing process is an ink-jet printing process.