Method of manufacturing semiconductor device, substrate processing apparatus and recording medium
The present disclosure provides a technique including a method of manufacturing a semiconductor device, which is capable of improving the characteristics of a film formed on a substrate. The method of manufacturing a semiconductor device may include: (a) forming a first film containing a predetermined element, oxygen, carbon and nitrogen on a substrate; and (b) forming a second film thinner than the first film on a top surface of the first film, the second film having an oxygen concentration lower than an oxygen concentration of the first film or having oxygen and carbon concentrations lower than oxygen and carbon concentrations of the first film.
1. A method of manufacturing a semiconductor device, comprising:
(a) forming a first film on a substrate by supplying first gases containing a predetermined element, oxygen, carbon and nitrogen, wherein the first gases comprise an oxygen-containing gas; and
(b) forming a second film thinner than the first film on a top surface of the first film by supplying second gases containing the predetermined element, oxygen, carbon and nitrogen, wherein the second gases comprise an oxygen-containing gas, and a concentration of each of the predetermined element, oxygen, carbon and nitrogen in the second gases is greater than zero, and
wherein at least one selected from the group consisting of a supply duration, a flow rate, a partial pressure, and a concentration of the oxygen-containing gas in the second gases supplied in (b) is less than that of the oxygen-containing gas in the first gases supplied in (a) such that the second film has an oxygen concentration lower than an oxygen concentration of the first film or has oxygen and carbon concentrations lower than oxygen and carbon concentrations of the first film.
2. The method of claim 1 , wherein a thickness of the second film ranges from 1 nm to 2 nm.
3. The method of claim 1 , wherein the second film comprises the predetermined element, oxygen, carbon and nitrogen.
4. The method of claim 1 , wherein the second film comprises the predetermined element, carbon and nitrogen.
5. The method of claim 1 , wherein the second film comprises the predetermined element and nitrogen.
6. The method of claim 1 , wherein a nitrogen concentration of the first film is lower than the carbon concentration of the first film.
7. The method of claim 1 , wherein (a) comprises supplying at least one gas selected from a group consisting of a gas containing the predetermined element, a gas containing the predetermined element and carbon, a gas containing carbon and nitrogen, a carbon-containing gas, a nitrogen-containing gas and a first oxygen-containing gas to the substrate, and (b) comprises supplying at least one gas selected from the group consisting of the gas containing the predetermined element, the gas containing the predetermined element and carbon, the gas containing carbon and nitrogen, the carbon-containing gas, the nitrogen-containing gas and the first oxygen-containing gas to the substrate.
8. The method of claim 1 , wherein (a) comprises performing a cycle a predetermined number of times, the cycle comprising: (a-1) supplying at least one gas selected from a group consisting of a gas containing the predetermined element and a gas containing the predetermined element and carbon to the substrate; (a-2) supplying at least one gas selected from a group consisting of a gas containing carbon and nitrogen, a carbon-containing gas and a nitrogen-containing gas to the substrate; and (a-3) supplying a first oxygen-containing gas to the substrate.
9. The method of claim 8 , wherein (b) comprises performing a cycle comprising: (a-1), (a-2) and (a-3) a predetermined number of times.
10. The method of claim 9 , wherein an amount of the first oxygen-containing gas supplied in each cycle of (b) is smaller than an amount of the first oxygen-containing gas supplied in each cycle of (a).
11. The method of claim 9 , wherein a supply duration of the first oxygen-containing gas supplied in each cycle of (b) is shorter than a supply duration of the first oxygen-containing gas supplied in each cycle of (a), or at least one of flow rate, partial pressure and concentration of the first oxygen-containing gas supplied in each cycle of (b) is lower than at least one of flow rate, partial pressure and concentration of the first oxygen-containing gas supplied in each cycle of (a), respectively.
12. The method of claim 8 , wherein (b) comprises performing a cycle a predetermined number of times, the cycle comprising: (b-1) supplying at least one gas selected from the group consisting of the gas containing the predetermined element and the gas containing the predetermined element and carbon to the substrate; (b-2) supplying at least one gas selected from the group consisting of the gas containing carbon and nitrogen, the carbon-containing gas and the nitrogen-containing gas to the substrate; and (b-3) supplying a second oxygen-containing gas to the substrate, the second oxygen-containing gas having: a molecular structure different from a molecular structure of the first oxygen-containing gas; and an oxidative power lower than an oxidative power of the first oxygen-containing gas.
13. The method of claim 8 , wherein (b) comprises performing a cycle comprising: (a-1) and (a-2) a predetermined number of times.
14. The method of claim 8 , wherein (b) comprises performing a cycle a predetermined number of times, the cycle comprising: (b-1) supplying the gas containing the predetermined element to the substrate; and (b-2) supplying the nitrogen-containing gas to the substrate.
15. The method of claim 14 , wherein a flow rate of the nitrogen-containing gas supplied in (b) is greater than a flow rate of the nitrogen-containing gas supplied in (a).
16. The method of claim 1 , wherein a carbon concentration of the second film is lower than a carbon concentration of the first film.