Handler bonding and debonding for semiconductor dies
Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer. The additive comprises, for example, a 355 nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The the at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.
1. A bonded semiconductor package comprising at least:
a handler;
at least one packaged semiconductor device bonded to the handler;
a release layer, vulnerable to ablation by laser radiation, provided directly on the handler, between the handler and the at least one packaged semiconductor device, wherein the release layer comprises at least one additive material, the at least one additive material adjusts a frequency of electro-magnetic radiation absorption property of the release layer.
2. The bonded semiconductor package of claim 1 , wherein the at least one additive material comprises one of a single additive material or multiple additive materials.
3. The bonded semiconductor package of claim 2 , wherein the single additive material is one of chemical absorber for a 355 nm wavelength and a chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm, and the single additive material additive material being effective at room temperature to a temperature greater than 250° C. and is thermally stable at a temperature ≥250° C.
4. The bonded semiconductor package of claim 2 , wherein a first of the multiple additive materials is a chemical absorber for a 355 nm wavelength and a second of the multiple additive materials is a chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm, and wherein the each of the first and second multiple additive materials is effective at room temperature to a temperature greater than 250° C. and is thermally stable at a temperature ≥250° C.
5. The bonded semiconductor package of claim 1 , wherein the at least one additive material is a 355 nm chemical absorber in a phenoxy base material.
6. The bonded semiconductor package of claim 1 , wherein the at least one additive material is 2, 5-Bis(2-benzimidazolyl)-pyridine.
7. The bonded semiconductor package of claim 1 , wherein the at least one additive material is:
where R is one of methylcyclohexane and n-butyl.
8. The bonded semiconductor package of claim 1 , wherein the at least one additive is chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm and fully soluble in cyclohexanone.
9. A bonded semiconductor package comprising at least:
a handler;
at least one packaged semiconductor device bonded to the handler;
a release layer, vulnerable to ablation by laser radiation, provided directly on the handler and between the handler and the at least one packaged semiconductor device, wherein the release layer comprises at least one additive material, the at least one additive material adjusts a frequency of electro-magnetic radiation absorption property of the release layer; and
an insulating layer disposed between the at least one packaged semiconductor device and the release layer.
10. The bonded semiconductor package of claim 9 , wherein the release layer comprises an adhesive.
11. The bonded semiconductor package of claim 9 , further comprising:
an adhesive layer in contact with the release layer, wherein the adhesive layer and the release layer are separate layers.