Film deposition method and film deposition apparatus
A film deposition method is provided for filling a recessed pattern formed in a surface of a substrate with a film. In the method, a halogen-containing gas is supplied to a top surface of a substrate and an upper portion of a recessed pattern, thereby forming an adsorption blocking group on the top surface of the substrate and the upper portion of the recessed pattern. A first reaction gas is supplied to a surface of the substrate including the top surface and the recessed pattern to cause the first reaction gas to adsorb on an area where the adsorption blocking group is not formed on. A second reaction gas reactable with the first reaction gas is supplied to the surface of the substrate to produce a reaction product of the first reaction gas adsorbed on the bottom portion of the recessed pattern and the second reaction gas.
1. A film deposition method for filling a recessed pattern formed in a surface of a substrate with a film from a bottom surface of the recessed pattern, the method comprising steps of:
supplying ClF 3 gas to a top surface of a substrate and an upper portion of a recessed pattern formed in the top surface of the substrate, thereby forming an adsorption blocking group containing fluorine on the top surface of the substrate and the upper portion of the recessed pattern;
supplying a first reaction gas to a surface of the substrate including the top surface and the recessed pattern to cause the first reaction gas to adsorb on an area where the adsorption blocking group containing fluorine is not formed on, the area including a bottom portion of the recessed pattern other than the top surface of the substrate and the upper portion of the recessed pattern; and
supplying a second reaction gas reactable with the first reaction gas to the surface of the substrate to produce a reaction product of the first reaction gas adsorbed on the bottom portion of the recessed pattern and the second reaction gas, thereby depositing a molecular layer of the reaction product on the bottom portion of the recessed pattern.
2. The film deposition method according to claim 1 , wherein a temperature of the substrate is set at a predetermined temperature or lower that does not cause an etching action of the ClF 3 gas.
3. The film deposition method according to claim 2 , wherein the predetermined temperature is 250 degrees C.
4. The film deposition method according to claim 2 , wherein in the predetermined temperature is 150 degrees C.
5. The film deposition method according to claim 1 , wherein the first reaction gas is a titanium-containing gas.
6. The film deposition method according to claim 5 , wherein the titanium-containing gas is TiCl 4 , and the reaction product is TiO 2 .
7. The film deposition method according to claim 1 ,
wherein the substrate is arranged on a turntable along a circumferential direction thereof,
wherein a ClF 3 gas supply area, a first reaction gas supply area, and a second reaction gas supply area are arranged above the turntable, along the circumferential direction, and apart from each other, and
wherein the steps of supplying the ClF 3 gas, supplying the first reaction gas, and supplying the second reaction gas are sequentially repeated by rotating the turntable in a rotational direction, thereby depositing the molecular layer on the bottom portion of the recessed pattern.
8. The film deposition method according to claim 7 ,
wherein purge gas supply areas are arranged between the halogen gas supply area and the first reaction gas supply area, and between the first reaction gas supply area and the second reaction gas supply area, and
further comprising:
supplying a purge gas to the surface of the substrate between the steps of supplying the ClF 3 gas and supplying the first reaction gas, and between the steps of supplying the first reaction gas and supplying the second reaction gas, respectively.
9. The film deposition method according to claim 1 , wherein the ClF 3 gas is supplied to the surface of the substrate while being activated by plasma.