Manufacturing method of the semiconductor device
View Patent ↗The semiconductor device is manufactured through the following steps: after first heat treatment is performed on an oxide semiconductor film, the oxide semiconductor film is processed to form an oxide semiconductor layer; immediately after that, side walls of the oxide semiconductor layer are covered with an insulating oxide; and in second heat treatment, the side surfaces of the oxide semiconductor layer are prevented from being exposed to a vacuum and defects (oxygen deficiency) in the oxide semiconductor layer are reduced.
1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first insulating layer over a substrate;
forming an oxide semiconductor film over and in contact with the first insulating layer;
performing a first heat treatment to the oxide semiconductor film;
patterning the oxide semiconductor film after performing the first heat treatment to form an oxide semiconductor layer;
forming a second insulating layer covering the oxide semiconductor layer; and
performing a second heat treatment to the oxide semiconductor layer after forming the second insulating layer,
wherein a part of oxygen in the first insulating layer is desorbed during the first heat treatment, and
wherein a part of the desorbed oxygen is supplied to the oxide semiconductor film.
2. The method according to claim 1 , wherein the first insulating layer is formed using an insulating oxide containing more oxygen than oxygen in a stoichiometric proportion.
3. The method according to claim 1 , wherein the first heat treatment is performed by a heat treatment on the substrate.
4. The method according to claim 1 , wherein a concentration of hydrogen in the oxide semiconductor layer is lowered after performing the first heat treatment.
5. The method according to claim 1 , further comprising the step of forming a first conductive layer and a second conductive layer over the first insulating layer, wherein each of the first conductive layer and the second conductive layer is a metal layer having a thickness ranging from 100 nm to 300 nm.
6. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first insulating layer over a substrate;
forming an oxide semiconductor film over and in contact with the first insulating layer;
patterning the oxide semiconductor film to form an oxide semiconductor layer;
forming a second insulating layer covering the oxide semiconductor layer; and
performing a second heat treatment to the oxide semiconductor layer after forming the second insulating layer,
wherein a part of oxygen in the second insulating layer is desorbed during the second heat treatment, and
wherein a part of the desorbed oxygen is supplied to the oxide semiconductor layer.
7. The method according to claim 6 , further comprising the step of performing a first heat treatment to the oxide semiconductor film before the step of patterning the oxide semiconductor film.
8. The method according to claim 7 ,
wherein a part of oxygen in the first insulating layer is desorbed during the first heat treatment, and
wherein a part of the desorbed oxygen is supplied to the oxide semiconductor film.
9. The method according to claim 6 , wherein the first insulating layer is formed using an insulating oxide containing more oxygen than oxygen in a stoichiometric proportion.
10. The method according to claim 7 , wherein the first heat treatment is performed by a heat treatment on the substrate.
11. The method according to claim 7 , wherein a concentration of hydrogen in the oxide semiconductor film is lowered after performing the first heat treatment.
12. The method according to claim 6 , further comprising the step of forming a first conductive layer and a second conductive layer over the first insulating layer, wherein each of the first conductive layer and the second conductive layer is a metal layer having a thickness ranging from 100 nm to 300 nm.
13. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first insulating layer over a substrate;
forming an oxide semiconductor film over and in contact with the first insulating layer;
patterning the oxide semiconductor film to form an oxide semiconductor layer;
forming a second insulating layer covering the oxide semiconductor layer;
forming a third insulating layer covering the second insulating layer; and
performing a second heat treatment to the oxide semiconductor layer after forming the third insulating layer,
wherein a part of oxygen in the third insulating layer is desorbed during the second heat treatment, and
wherein a part of the desorbed oxygen is supplied to the oxide semiconductor layer.
14. The method according to claim 13 , further comprising the step of performing a first heat treatment to the oxide semiconductor film before the step of patterning the oxide semiconductor film.
15. The method according to claim 14 ,
wherein a part of oxygen in the first insulating layer is desorbed during the first heat treatment, and
wherein a part of the desorbed oxygen is supplied to the oxide semiconductor film.
16. The method according to claim 14 , wherein the first insulating layer is formed using an insulating oxide containing more oxygen than oxygen in a stoichiometric proportion.
17. The method according to claim 14 , wherein the first heat treatment is performed by a heat treatment on the substrate.
18. The method according to claim 14 , wherein a concentration of hydrogen in the oxide semiconductor film is lowered after performing the first heat treatment.
19. The method according to claim 13 , further comprising the step of forming a first conductive layer and a second conductive layer over the first insulating layer, wherein each of the first conductive layer and the second conductive layer is a metal layer having a thickness ranging from 100 nm to 300 nm.