Spin current magnetization rotating element, magnetoresistive effect element and magnetic memory
A spin current magnetization rotating element of the present disclosure includes a first ferromagnetic metal layer and a spin-orbit torque wiring, in which the spin-orbit torque wiring has a structure in which spin conduction layers and interface spin generation layers are alternately laminated, and one of the spin conduction layers is in closest proximity to the first ferromagnetic metal layer.
1. A spin current magnetization rotating element comprising:
a first ferromagnetic metal layer in which a magnetization direction changes; and
a spin-orbit torque wiring extending in a second direction intersecting a first direction which is a direction perpendicular to a surface of the first ferromagnetic metal layer and having one surface on which the first ferromagnetic metal layer is positioned, wherein
the spin-orbit torque wiring has a structure in which a spin conduction layer and an interface spin generation layer are alternately laminated in the first direction, and
one of the spin conduction layers in the spin-orbit torque wiring is in closest proximity to the first ferromagnetic metal layer.
2. The spin current magnetization rotating element according to claim 1 , wherein a thickness of the interface spin generation layer is equal to or less than twice an atomic radius of atoms forming the interface spin generation layer.
3. The spin current magnetization rotating element according to claim 2 , wherein the interface spin generation layer is formed of a material containing any one element selected from the group consisting of Mo, Ru, Rh, Pd, Ta, W, Ir, Pt, Au, and Bi.
4. The spin current magnetization rotating element according to claim 2 , wherein a thickness of the spin conduction layer is a thickness equal to or less than a spin diffusion length of the spin conduction layer.
5. The spin current magnetization rotating element according to claim 2 , wherein the spin-orbit torque wiring includes two or more layers of the interface spin generation layers.
6. The spin current magnetization rotating element according to claim 2 , wherein
the spin conduction layers sandwiching the interface spin generation layer are formed of materials different from each other, and
a spin resistivity of the spin conduction layer close to the first ferromagnetic metal layer is smaller than a spin resistivity of the spin conduction layer which is distant from the first ferromagnetic metal layer.
7. The spin current magnetization rotating element according to claim 1 , wherein the spin conduction layer is formed of a material containing at least any one element selected from the group consisting of Al, Si, Cu, Ag, GaAs, and Ge.
8. The spin current magnetization rotating element according to claim 7 , wherein the interface spin generation layer is formed of a material containing any one element selected from the group consisting of Mo, Ru, Rh, Pd, Ta, W, Ir, Pt, Au, and Bi.
9. The spin current magnetization rotating element according to claim 7 , wherein the spin-orbit torque wiring includes two or more layers of the interface spin generation layers.
10. The spin current magnetization rotating element according to claim 1 , wherein the interface spin generation layer is formed of a material containing any one element selected from the group consisting of Mo, Ru, Rh, Pd, Ta, W, Ir, Pt, Au, and Bi.
11. The spin current magnetization rotating element according to claim 10 , wherein the spin-orbit torque wiring includes two or more layers of the interface spin generation layers.
12. The spin current magnetization rotating element according to claim 1 , wherein a thickness of the spin conduction layer is a thickness equal to or less than a spin diffusion length of the spin conduction layer.
13. The spin current magnetization rotating element according to claim 12 , wherein the spin-orbit torque wiring includes two or more layers of the interface spin generation layers.
14. The spin current magnetization rotating element according to claim 1 , wherein the spin-orbit torque wiring includes two or more layers of the interface spin generation layers.
15. The spin current magnetization rotating element according to claim 1 , wherein a thickness of the interface spin generation layer at a position closest to the first ferromagnetic metal layer is smaller than a thickness of the other interface spin generation layers in the interface spin generation layers.
16. The spin current magnetization rotating element according to claim 1 , wherein
the spin conduction layers sandwiching the interface spin generation layer are formed of materials different from each other, and
a spin resistivity of the spin conduction layer close to the first ferromagnetic metal layer is smaller than a spin resistivity of the spin conduction layer which is distant from the first ferromagnetic metal layer.
17. The spin current magnetization rotating element according to claim 1 , wherein a thickness of the spin-orbit torque wiring is equal to or less than 20 nm.
18. A magnetoresistive effect element comprising:
the spin current magnetization rotating element according to claim 1 ;
a second ferromagnetic metal layer in which a magnetization direction is fixed; and
a nonmagnetic material layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer.
19. A magnetic memory comprising a plurality of magnetoresistive effect elements according to claim 18 .